Details, datasheet, quote on part number: PMCM4401UNEZ
PartPMCM4401UNEZ
Category
TitleMOSFET N-CHANNEL 20V 4WLCSP
Description

Nexperia's N-channel and P-channel MOSFETS in WLCSP packages are available in either a WLCSP4 package with four pins or a WLCSP6 package with six pins. These products offer the lowest RDS(ON) per mm² while maintaining greater than 2 kV of ESD protection currently available.



CompanyNexperia
DatasheetDownload PMCM4401UNEZ datasheet
  
PMCM4401UNEZ photo

Others parts numbering
PMCM6501VNEZ: MOSFET N-CH 12V 6WLCSP
PMCM650CUNEZ: PMCM650CUNE NAX000 NONE
PMCM6501UNEZ: MOSFET N-CHANNEL 20V 6WLCSP
PMCM6501UPEZ: MOSFET P-CHANNEL 20V 4WLCSP
PMCM4401VNEAZ: MOSFET N-CH 12V WLCSP
PMCM4401VPEZ: MOSFET P-CH 12V WLCSP
PMCM6501VPEZ: MOSFET P-CH 12V 6WLCSP
PMCM4402UPEZ: MOSFET P-CHANNEL 20V 4WLCSP

 

Features, Applications

N-channel enhancement mode Field-Effect Transistor (FET) a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

Low threshold voltage Ultra small package: 0.35 mm Trench MOSFET technology ElectroStatic Discharge (ESD) protection 2 kV HBM

Battery switch High-speed line driver Low-side loadswitch Switching circuits
Table 1. Quick reference data Symbol VDS VGS ID RDSon
Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance
Device mounted an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm
Table 2. Pinning information Pin B1 B2 Symbol Description gate source drain source

Table 3. Ordering information Type number PMCM4401UNE Package Name WLCSP4 Description wafer level chip-size package; 4 bumps x 2) Version WLCSP4_2-2

Table 4. Marking codes Type number PMCM4401UNE Marking code R
All information provided in this document is subject to legal disclaimers.

Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Parameter drain-source voltage gate-source voltage drain current VGS 4.5 V; Tamb = 25 C; 5 s VGS 4.5 V; Tamb 25 C VGS 4.5 V; Tamb 100 C IDM Ptot peak drain current total power dissipation Tamb = 25 C; single pulse; 10 s Tamb 25 C Tsp C Tj Tamb Tstg IS

junction temperature ambient temperature storage temperature source current Tamb C [1]

Device mounted an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 6 cm Device mounted an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard footprint.

Normalized total power dissipation as a function of junction temperature
Normalized continuous drain current as a function of junction temperature

 

Some Part number from the same manufacture Nexperia
PMCM6501VNEZ

Nexperia's N-channel and P-channel MOSFETS in WLCSP packages are available in either a WLCSP4 package with four pins or a WLCSP6 package with six pins. These products offer the lowest RDS(ON) per mm²

PMCM650CUNEZ
PMCM6501UNEZ
PMCM6501UPEZ
PMCM4401VNEAZ
PMCM4401VPEZ
PMCM6501VPEZ
PMCM4402UPEZ
 
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