|Category||Discrete => Diodes & Rectifiers|
|Description||Diode 150a 200v|
|Datasheet||Download 45LR20 datasheet
Alloy diode High current carrying capability High voltage ratings to 1000V High surge current capabilities Stud cathode and stud anode versionTypical Applications
Converters Power supplies Machine tool controls High power drives Medium traction applications
VRRM , maximum repetitive peak reverse voltage V
45L 50V and 300V VRRM classes are not available. **Also available as JEDEC series 1N3288A through 1N3296A (DO-8 case style) and 1N3111 through 1N3092 (DO-30 case style)
I F(AV) Max. average forward current @ Case temperature I F(RMS) Max. RMS forward current I FSM Max. peak, one-cycle forward, non-repetitive surge current
No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial = TJ max.
V F(TO)1 Low level value of threshold voltage V F(TO)2 High level value of threshold voltage V FM Low level value of forward slope resistance High level value of forward slope resistance Max. forward voltage drop
> x IF(AV) ),TJ = TJ max. Ipk= = 10ms sinusoidal wave > x IF(AV) ),TJ = TJ max. (16.7% x IF(AV) IF(AV)), = TJ max.
TJ Tstg RthJC RthCS T Max. junction operating temperature Max. storage temperature range Max. thermal resistance, junction to case Max. thermal resistance, case to heatsink Mounting torque 150K 150KS Min. Max. Min. Max. Min. Max. Min. Max. wt Approximate weight 150K-A Case style 150KS 150L-A/45LDC operation Mounting surface, smooth, flat and greased Not lubricated threads
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
45 = Standard version 47 = Version with Pinch Bolt (only flat base; available on request) L = Essential Part Number F = Flat Base None = Normal Stud R = Stud Reverse Polarity (Anode to Stud) None = Stud Normal Polarity (Cathode to Stud) Voltage code: Code 10 = VRRM (See Voltage Ratings table) NOTE: For longer lead Contact Factory
|Related products with the same datasheet|
|Some Part number from the same manufacture|
|45LR40 Diode 150a 200v|
|46F5735 Relay PCB Dpco|
|46WX2984MMIC2660BM5 Ic-sm-voltage Converter|
|48F4267 Transistor MOSFET To-220|
|48H1001-2R DC/DC Converter 50w 5.1v 8a|
|48IMS6-05-9 DC/DC Converter 6w 5v|
|48Q1001-2R DC/DC Converter 5.1v 16a|
|4N29300 Optocoupler Photodarlington|
|5-1393090-0 Relay 2pole 24vdc|
|5-1393211-3 Relay Panel Dpco 12vdc|
|5-1393234-0 Relay Dpco 12vdc|
|5-1419111-0 Relay Plug in 115vac|
APT10021JFLL : 1000V, 37A Power MOS 7 Transistor. Power MOS is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal.
ES2FthruES2G : . Reverse Voltage 400 V Forward Current 2.0 A Reverse Recovery Time 35 ns Plastic package has Underwriters Laboratories Flammability Classification 94V-0 Ideally suited for use in very high frequency switching power supplies, inverters and as free wheeling diodes Ultrafast recovery time for high efficiency Excellent high temperature switching Glass passivated.
FRF150D : 25a, 100v, 0.07 Ohm, Rad Hard, N-channel Power MOSFETs. 25A, 100V, RDS(on) = 0.07 Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma Meets Pre-Rad s to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 7.0nA Per-RAD(Si)/sec Typically Pre-RAD.
HAT1021R : Power Switching MOSFET. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.
MMBT5086 : Amplifier. PNP General Purpose Amplifier. This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA. Sourced from Process 62. VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous *These ratings are limiting values above which the serviceability of any semiconductor.
NTE361 : Silicon NPN Transistor. RF Power Output, po = 2W @ 512MHz.. : The is a silicon NPN transistor designed for 12.5 Volt UHF largesignal amplifier applications in industrial and commercial FM equipment operating to 512MHz. : D Specified 12.5 Volt, 470MHz Characteristics: Output Power = 2.0 Watts Minimum Gain = 8.0dB Efficiency 50% D Characterized with Series Equivalent LargeSignal Impedance Parameters D Grounded.
PM25RLB120 : Type = Ipm Module ;; Voltage = 1200V ;; Current = 25A ;; Circuit Configuration = Seven-pack ;; Recommended For Designs = ;; Switching Loss Curves =.
RGL41A : Discrete, Diodes, Standard, Surface Mount. n HIGH TEMPERATURE METALLURGICALLY BONDED CONSTRUCTION n SINTERED GLASS CAVITY-FREE JUNCTION n 1.0 AMP OPERATION = 55°C, WITH NO THERMAL RUNAWAY n MEETS UL 94V-0 Electrical Characteristics @ 25 oC. Maximum Ratings Peak Repetitive Reverse VoltageVRRM RMS Reverse VoltageVR(rms) DC Blocking VoltageVDC Average Forward Rectified CurrentIF(av) Current 3/8".
S37 : Silicon Power Rectifier.
SF30AG-SF30JG : Glass Passivated. 3.0a Super-fast Glass Passivated Rectifier. Glass Passivated Die Construction Diffused Junction Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 125A Peak Low Reverse Leakage Current Plastic Material: UL Flammability Classification Rating 94V-0 Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method.
BAT46WH,135 : 0.25 A, 100 V, SILICON, SIGNAL DIODE. s: Package: PLASTIC PACKAGE-2 ; Number of Diodes: 1 ; IF: 250 mA.
DFSG1-20-0.8/A : 1 ELEMENT, 0.1 uH, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Lead Style: Radial, WIRE ; Application: General Purpose ; Inductance Range: 0.1000 microH ; Inductance Tolerance: 15 (+/- %) ; DCR: 1.3 ohms ; Rated DC Current: 800 milliamps ; Testing Frequency: 50 kHz ; Operating Temperature: -25 to 100 C (-13 to 212 F).
DSC3001 : 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: ROHS COMPLIANT, SSSMINI3-F2-B, 3 PIN.
M55342/07 : RESISTOR, THIN FILM, 0.125; 0.25 W, 0.1; 1; 2; 5; 10 %, 25; 50; 100 ppm, 10 ohm - 1000000 ohm, SURFACE MOUNT. s: Category / Application: General Use ; Technology / Construction: Thin Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP ; Operating DC Voltage: 100 volts ; Operating Temperature: -55 to 125 C (-67 to 257 F).
RX-1M : RESISTOR, METAL OXIDE FILM, 0.5 W, 0.5 - 20 %, 50 ppm, 1000000 ohm - 10000000000000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: MetalOxide ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED, ROHS COMPLIANT ; Operating DC Voltage: 1000 volts ; Operating Temperature: 25 C (77 F).
35SGV4R7M4X6.1 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 35 V, 4.7 uF, SURFACE MOUNT. s: Configuration / Form Factor: Chip Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 4.7 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 35 volts ; Leakage Current: 3 microamps ; Mounting Style: Surface Mount Technology ; Operating Temperature:.
7446111068 : 1 ELEMENT, 82 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: Radial, WIRE ; Standards and Certifications: RoHS ; Application: General Purpose, FILTER CHOKE ; Inductance Range: 82 microH ; Rated DC Current: 1000 milliamps ; Operating Temperature: -25 to 85 C (-13 to 185 F).
82085 : POWER TRANSFORMER. s: Category: Power ; Other Transformer Types / Applications: STANDARD ; Mounting: Chip Transformer ; Operating Temperature: -55 to 130 C (-67 to 266 F).