Details, datasheet, quote on part number: BC849CW/T1
CategoryDiscrete => Transistors
DescriptionTransistor Sot-23
DatasheetDownload BC849CW/T1 datasheet


Features, Applications

FEATURES Low current (max. 100 mA) Low voltage (max. 45 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION NPN transistor a SOT23 plastic package. PNP complements: BC859 and BC860. MARKING TYPE NUMBER BC849B BC849C Note p : Made in Hong Kong. t : Made in Malaysia. MARKING 2B 2C TYPE NUMBER BC850B BC850C MARKING 2F 2G

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC849 BC850 VCEO collector-emitter voltage BC849 BC850 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 open collector open base mW C PARAMETER collector-base voltage CONDITIONS open emitter V MIN. MAX. UNIT

THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted an FR4 printed-circuit board. CHARACTERISTICS 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain BC850C DC current gain BC849C; BC850C VCEsat VBEsat VBE fT F collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage collector capacitance emitter capacitance transition frequency noise figure = 10 mA; = 100 mA; = 10 mA; = 0.5 mA; note = 100 mA; = 5 mA; note = 2 mA; VCE 5 V; note = 10 mA; VCE 5 V; note = 0; VCB = 1 MHz = 10 mA; VCE = 100 MHz = 200 A; VCE to 15.7 kHz = 200 A; VCE = 1 kHz; 200 Hz Notes 1. VBEsat decreases by about 1.7 mV/K with increasing temperature. 2. VBE decreases by about 2 mV/K with increasing temperature. = 2 mA; VCE 5 V; see Figs 2 and 3 CONDITIONS = 0; VCB = 0; VCB = 0; VEB = 10 A; VCE 5 V; see Figs 2 and 3 MIN. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1


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