Details, datasheet, quote on part number: BC856/T1
CategoryDiscrete => Transistors
DescriptionTransistor Sot-23
DatasheetDownload BC856/T1 datasheet


Features, Applications

FEATURES Low current (max. 100 mA) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION PNP transistor a SOT23 plastic package. NPN complements: BC846 and BC847.

MARKING TYPE NUMBER BC856B BC857 Note p : Made in Hong Kong. t : Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. MARKING 3B 3H TYPE NUMBER BC857B BC857C MARKING 3F 3G

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC856 BC857 VCEO collector-emitter voltage BC856 BC857 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Mounted an FR4 printed-circuit board. 1999 Apr 12 2 emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 °C; note 1 open collector open base mW °C PARAMETER collector-base voltage CONDITIONS open emitter V MIN. MAX. UNIT

THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Mounted an FR4 printed-circuit board. CHARACTERISTICS 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain BC857B BC857C VCEsat VBEsat VBE fT F Notes 1. VBEsat decreases by about -1.7 m K/V with increasing temperature. 2. VBE decreases by about -2 mV/K with increasing temperature. collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltage collector capacitance transition frequency noise figure = -10 mA; = -100 mA; = -10 mA; = -0.5 mA; note = -100 mA; = -5 mA; note = -2 mA; VCE -5 V; note = -10 mA; VCE -5 V; note = 0; VCB = 1 MHz = -10 mA; VCE = 100 MHz = -200 µA; VCE = 1 kHz; 200 Hz CONDITIONS = 0; VCB = 0; VCB = 0; VEB = -2 mA; VCE -5 V; see Figs 2, 3 and MIN. PARAMETER thermal resistance from junction to ambient CONDITIONS note 1


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