Details, datasheet, quote on part number: IOS62C256-70U
DescriptionIc-sm-256k CMOS SRAM
DatasheetDownload IOS62C256-70U datasheet


Features, Applications


Access time: 70, 100 ns Low active power: 200 mW (typical) Low standby power 250 W (typical) CMOS standby 28 mW (typical) TTL standby Fully static operation: no clock or refresh required TTL compatible inputs and outputs Single 5V power supply

DESCRIPTION The ISSI is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSI's highWhen CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down 250 W (typical) at CMOS input levels. Easy memory expansion is provided by using an active LOW Chip Enable (CE) input and an active LOW Output Enable (OE) input. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62C256 is pin compatible with other X 8 SRAMs in 600-mil PDIP, 450-mil plastic SOP, or TSOP package.

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. Copyright 1995, Integrated Silicon Solution, Inc.

A0-A14 Address Inputs Chip Enable Input Output Enable Input Write Enable Input Input/Output Power Ground

Mode Not Selected (Power-down) Output Disabled Read Write

Symbol VTERM TBIAS TSTG PT IOUT Parameter Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature Power Dissipation DC Output Current (LOW) Value to +150 Unit W mA

Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Symbol VOH VOL VIH VIL ILI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage Output Leakage Test Conditions VCC = Min., IOH 1.0 mA VCC = Min., IOL 2.1 mA Min. Max. 0.4 VCC Unit A

Symbol ICC2 ISB1 Parameter Vcc Operating Supply Current Vcc Dynamic Operating Supply Current TTL Standby Current (TTL Inputs) CMOS Standby Current (CMOS Inputs) Test Conditions VCC = Max., CE = VIL IOUT = 0 mA, = 0 VCC = Max., CE = VIL IOUT = 0 mA, f = fMAX VCC = Max., VIN = VIH or VIL CE VIH, = 0 VCC = Max., CE VCC 0.2V, VIN VCC 0.2V, or VIN -45 ns Min. Max. ns Min. Max. ns Min. Max. Unit mA

Com. Ind. Com. Ind. Com. Ind. Com. Ind.

Notes: f = fMAX, address and data inputs are cycling at the maximum frequency, = 0 means no input lines change.

Symbol CIN COUT Parameter Input Capacitance Output Capacitance Conditions VIN = 0V VOUT = 0V Max. 8 10 Unit pF

Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: = 1 MHz, Vcc = 5.0V.


Some Part number from the same manufacture
IP-80C32-25 Ic-8-bit CMOS Cpu
IP3R18K05 Ic-voltage Regulator +5v
IP80C32-12 Ic-8-bit CMOS Cpu
IPL10020BW Photodiode
IPL10530DAW Photodiode Flat Lens Amplified
IPL10530HAL Photodiode Amplified
IPO-002-GSF Proximity Switch PNP
IQ-140-B PIR Standalone
IQ220T Sensor PIR Quad
IQXO-331-100.0MHZ Crystal Oscillator 100.000000mhz
IR1000-01 Regulator High Precision
IR2-VE3311 Luminaire Maintained IR Test
IR2000-02 Regulator High Precision
IR3000-03 Regulator High Precision
IR5 Infrared Detector Card
IRF7202 Transistor MOSFET So-8
IRFP350FI Transistor MOSFET
Same catergory

PSB0602 : SMD Power Inductors. (a) Series code (b) Dimension code (c) Inductance code = 100uH (d) Tolerance code = 20% (e) Z : Standard part (f) F : Lead Free 4. MATERIALS f a (a) Core : DR Ferrite Core (b) Base : LCP (c) Wire : Enamelled Copper Wire (d) Terminal : Tinned Copper Plate (e) Adhesive : Epoxy (f) Ink : Bon Margue 5. GENERAL : a) Temp. rise : 40C Max. b) Rated current.

1-603227-0 : Black Nylon Tie Cables, Wire - Management 0.500' (152.40mm, 6.00") -; CABLE TIE, BLACK, 6", 100/PACK. s: Color: Black ; Length: 0.500' (152.40mm, 6.00") ; Tensile Strength: 30 lbs. (13.6 kg) ; Wire/Cable Tie Type: Standard, Locking ; Material: Nylon ; Bundle Diameter: 1.25" (31.75mm) ; Mounting Type: Free Hanging (In-Line) ; Width: 0.142" (3.61mm) ; : - ; Packaging:.

BX0037 : Battery Holders, Snaps & Contacts "D" Battery Holder. s: Manufacturer: Bulgin ; Product Category: Battery Holders, Snaps & Contacts ; RoHS:  Details ; Product: Battery Holders ; Battery Cell Size: AA ; Number of Batteries: 1 ; Dimensions: 71 mm L x 38.5 mm H ; Mounting Style: PCB ; Factory Pack Quantity: 50 ; Termination Style: Solder Tab.

0031.1673 : FUSE HOLDER, 6.3 X 32MM, PANEL MOUNT. s: Voltage Rating VDC: - ; Voltage Rating VAC: 250V ; Fuse Current: 10A ; Fuse Holder Type: Cartridge Fuse Holder ; Holder Terminals: Solder Lug ; No. of Fuses: 1 ; Fuse Size Held: 5mm x 20mm, 6.3mm x 32mm ; Fuse Size Metric: - ; Fuse Size Imperial: - ; Series: FEU.

P89LPC983FDH,529 : Embedded - Microcontroller Integrated Circuit (ics) Internal Tube 2.4 V ~ 5.5 V; IC 80C51 MCU 4KB FLASH 28TSSOP. s: Program Memory Size: 4KB (4K x 8) ; RAM Size: 256 x 8 ; Number of I /O: 26 ; Package / Case: 28-TSSOP (0.173", 4.40mm Width) ; Speed: 18MHz ; Oscillator Type: Internal ; Packaging: Tube ; Program Memory Type: FLASH ; EEPROM Size: - ; Core.

VVZB135-16NO1 : Scr Semiconductor Module; RECT BRIDGE 3PH 135A 1600V E2. s: Number of SCRs, Diodes: 3 SCRs, 3 Diodes ; Current - On State (It (AV)) (Max): 135A ; Current - On State (It (RMS)) (Max): - ; Voltage - Off State: 1600V ; Current - Gate Trigger (Igt) (Max): 78mA ; Current - Hold (Ih) (Max): 100mA ; Current - Non Rep. Surge 50, 60Hz (Itsm): - ; Structure:.

9-1879687-3 : 90.9 Ohm 0.5W, 1/2W Through Hole Resistors; RES 90.9 OHM 1/2W 0.1% AXIAL. s: Resistance (Ohms): 90.9 ; Power (Watts): 0.5W, 1/2W ; Tolerance: 0.1% ; Packaging: Bulk ; Composition: Metal Film ; Temperature Coefficient: 100ppm/C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant.

3-1879683-8 : 261 Ohm 0.25W, 1/4W Through Hole Resistors; RES 261 OHM 1/4W 0.1% AXIAL. s: Resistance (Ohms): 261 ; Power (Watts): 0.25W, 1/4W ; Tolerance: 0.1% ; Packaging: Bulk ; Composition: Metal Film ; Temperature Coefficient: 50ppm/C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant.

RG2012P-4123-W-T1 : 412K Ohm 0.125W, 1/8W Chip Resistor - Surface Mount; RES 412K OHM 1/8W .05% 0805. s: Resistance (Ohms): 412K ; Power (Watts): 0.125W, 1/8W ; Tolerance: 0.05% ; Packaging: Tape & Reel (TR) ; Composition: Thin Film ; Temperature Coefficient: 25ppm/C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant.

AP4002T : Power MOSFET suits space constrained applications. Housed in TO-92 through-hole package, Model AP4002T is suited for low current applications such as small switch power supplies and load switches. N-channel enhancement-mode power MOSFET BVDSS of 600 V, RDS(on) of 5 Ω, and 400 mA ID. Operating from -55 to 150C, miniature device is RoHS-compliant.

H8500VB : ROCKER SWITCH, SPST, LATCHED, PANEL MOUNT. s: Pole & Throw s: Single Pole, Single Throw ; Current Rating: 10 amps ; AC Voltage Rating: 250 volts ; Terminal Type: Quick Connect / Blade.

IRKCL131-04S10 : 140 A, 400 V, SILICON, RECTIFIER DIODE. s: Arrangement: Common Catode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, FAST RECOVERY ; IF: 140000 mA ; Pin Count: 3 ; Number of Diodes: 2.

RTOP200V1000JB : RES,CHASSIS MOUNT,THICK FILM,100 OHMS,5% +/-TOL,-150,150PPM TC. s: Category / Application: General Use.

T16D157K125CZSS : CAPACITOR, TANTALUM, NON SOLID, POLARIZED, 125 V, 150 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Applications: General Purpose ; Electrolytic Capacitors: Tantalum ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 150 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 125 volts ; Mounting Style: Through Hole ; Operating.

0-C     D-L     M-R     S-Z