Details, datasheet, quote on part number: IOS62C256-70U
PartIOS62C256-70U
Category
DescriptionIc-sm-256k CMOS SRAM
CompanyN.A.
DatasheetDownload IOS62C256-70U datasheet
  

 

Features, Applications

FEATURES

Access time: 70, 100 ns Low active power: 200 mW (typical) Low standby power 250 W (typical) CMOS standby 28 mW (typical) TTL standby Fully static operation: no clock or refresh required TTL compatible inputs and outputs Single 5V power supply

DESCRIPTION The ISSI is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSI's highWhen CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down 250 W (typical) at CMOS input levels. Easy memory expansion is provided by using an active LOW Chip Enable (CE) input and an active LOW Output Enable (OE) input. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62C256 is pin compatible with other X 8 SRAMs in 600-mil PDIP, 450-mil plastic SOP, or TSOP package.

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. Copyright 1995, Integrated Silicon Solution, Inc.

A0-A14 Address Inputs Chip Enable Input Output Enable Input Write Enable Input Input/Output Power Ground

Mode Not Selected (Power-down) Output Disabled Read Write

Symbol VTERM TBIAS TSTG PT IOUT Parameter Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature Power Dissipation DC Output Current (LOW) Value to +150 Unit W mA

Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Symbol VOH VOL VIH VIL ILI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage Output Leakage Test Conditions VCC = Min., IOH 1.0 mA VCC = Min., IOL 2.1 mA Min. Max. 0.4 VCC Unit A

Symbol ICC2 ISB1 Parameter Vcc Operating Supply Current Vcc Dynamic Operating Supply Current TTL Standby Current (TTL Inputs) CMOS Standby Current (CMOS Inputs) Test Conditions VCC = Max., CE = VIL IOUT = 0 mA, = 0 VCC = Max., CE = VIL IOUT = 0 mA, f = fMAX VCC = Max., VIN = VIH or VIL CE VIH, = 0 VCC = Max., CE VCC 0.2V, VIN VCC 0.2V, or VIN -45 ns Min. Max. ns Min. Max. ns Min. Max. Unit mA

Com. Ind. Com. Ind. Com. Ind. Com. Ind.

Notes: f = fMAX, address and data inputs are cycling at the maximum frequency, = 0 means no input lines change.

Symbol CIN COUT Parameter Input Capacitance Output Capacitance Conditions VIN = 0V VOUT = 0V Max. 8 10 Unit pF

Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: = 1 MHz, Vcc = 5.0V.


 

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