|Category||Memory => Multi Chip Memory|
|Description||Stacked Multi-chip Package (MCP/XIP) Flash Memory, Data Storage Mirrorbit Flash, And Psram (XIP), 2 X 64 Megabit (8M X 16-Bit) CMOS 3.0 Volt-only Page Mode Flash Memory Data Storage, 128 Megabit (8M X 16-Bit) CMOS 3.0 Volt-Only, Simultaneous Operation Flash Memory And 64 Mbit (4M X 16-Bit) CMOS Pseudo Static RAM|
|Company||Advanced Micro Devices, Inc.|
|Datasheet||Download Am70PDL127CDH datasheet
July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
There is no change to this datasheet as a result of offering the device as a Spansion product. Any changes that have been made are the result of normal datasheet improvement and are noted in the document revision summary, where supported. Future routine revisions will occur when appropriate, and changes will be noted in a revision summary.
AMD and Fujitsu continue to support existing part numbers beginning with "Am" and "MBM". To order these products, please use only the Ordering Part Numbers listed in this document.
Please contact your local AMD or Fujitsu sales office for additional information about Spansion memory solutions.Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP)
x 64 Megabit x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 64 Mbit x 16-Bit) CMOS Pseudo Static RAM DISTINCTIVE CHARACTERISTICSConsists 64 Mb pSRAM and two Am29LV640M. Power supply voltage to 3.1 volt High performance (XIP)
Access time as fast 65 ns initial 25 ns page Bank 2A: 16 Mbit x 8 and x 31) Bank 2B: 48 Mbit x 96)
to 128 words accessible through a command sequence to 64 factory-locked words to 64 customer-lockable words
Both top and bottom boot blocks in one device Manufactured 0.13 µm process technology 20-year data retention at 125°C Minimum 1 million erase cycle guarantee per sectorPage access times as fast 25 ns Random access times as fast 65 ns
Page size of 8 words: Fast page read access from random locations within the page
45 mA active read current 25 mA program/erase current 1 µA typical standby mode current
Two CE# inputs control selection of each half of the memory space
Software command-set compatible with JEDEC 42.4 standard
Full Voltage range: to 3.1 volt read, erase, and program operations for battery-powered applications
Provides device-specific information to the system, allowing host software to easily reconfigure for different Flash devices
Data can be continuously read from one bank while executing erase/program functions in another bank Zero latency switching from write to read operationsSuspends an erase operation to allow read or program operations in other sectors of same bank
4 separate banks, with up to two simultaneous operations per device
Reduces overall programming time when issuing multiple program command sequences
Bank A: 16 Mbit x 8 and x 31) Bank B: 48 Mbit x 96) Bank C: 48 Mbit x 96) Bank D: 16 Mbit x 8 and x 31)Provides a hardware method of detecting program or erase cycle completion
Hardware method to reset the device to reading array data
This document contains information on a product under development at Advanced Micro Devices. The information is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed product without notice.Publication# 30651 Rev: A Amendment +2 Issue Date: November 24, 2003
Refer to AMD's Website (www.amd.com) for the latest information.
|Related products with the same datasheet|
|Some Part number from the same manufacture Advanced Micro Devices, Inc.|
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|Am75PDL193CHH 128 Megabit (8 M X 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/write Flash Memory With Enhanced Versatile I/o Control And Dual Chip Enable Input Plus, For Additional Code or Data Storage, 64 Megabit|
|Am75PDL193CHHa Stacked Multi-chip Package (MCP) Flash Memory And SRAM, 64 Megabit (8 M X 8-Bit/4 M X 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory And 16 Mbit (1 M X 16-Bit) Pseudo Static RAM|
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