|Category||Multimedia => Audio => Amplifiers => Power Amplifiers => Single Channel|
|Description||22 Dbm, 17.7-32 GHZ Amplifier|
|Company||Agilent Technologies, Inc.|
|Datasheet||Download HMMC-5032 datasheet
22 dBm Output 8 dB Gain 50 Input/Output Matching Small Size Bias: 4.5 Volts, 250 mA
Chip Size: Chip Size Tolerance: Chip Thickness:
The is a MMIC power amplifier designed for use in wireless transmitters that operate within the 17.7 GHz to 32 GHz range. It provides 22 dBm of output power and dB of small-signal gain from a small easy-to-use device. The HMMC-5032 was designed to be driven by the HMMC-5040 (20-40 GHz) or the HMMC-5618 (5.9-20 GHz) MMIC amplifier for linear transmit applications. This device has input and output matching circuitry for use in 50 ohm environments.
Parameters/Conditions Drain Supply Voltages Gate Supply Voltages Applied Detector Bias (Optional) Total Drain Current RF Input Power Channel Temperature Backside Ambient Temperature Storage Temperature Maximum Assembly Temperature
Absolute maximum ratings for continuous operation unless otherwise noted. to DC Specifications / Physical Properties table for derating information.
Symbol Parameters/Conditions Drain Supply Operating Voltages First Stage Drain Supply Current (VDD -0.8 V) Second Stage Drain Supply Current (VDD 4.5 V, VGG -0.8 V) Gate Supply Operating Voltages (IDD 250 mA) Pinch-off Voltage (VDD 4.5 V, IDD 10 mA) Detector Bias Voltage (Optional) Thermal Resistance (Channel-to-Backside at Tch = 160°C) Channel Temperature (TA = 85°C, MTTF > 106 hrs VDD 4.5 V, IDD = 250 mA)
ambient operating temperature = 25°C unless otherwise noted. Thermal resistance (°C/Watt) at a channel temperature T(°C) can be estimated using the equation: (T) ch-bs [160°C+273]. Derate MTTF by a factor of two for every 8°C above T. chLow Band Specifications Min BW Gain Gain/T P-1dB PSAT (RLin)MIN (RLout)MIN Isolation
Operating Bandwidth Small Signal Gain Temperature Coefficient of Gain Output Power at 1dB Gain Compression Saturated Output Power Minimum Input Return Loss Minimum Output Return Loss Minimum Reverse IsolationNote: Devices operating continuously beyond 1 dB gain compression may experience power degradation.
The HMMC-5032 MMIC is a broadband power amplifier designed for use in transmitters that operate in various frequency bands between 17.7 GHz and 32 GHz. It can be attached to the output of the HMMC-5040 (20-40 GHz) or the HMMC-5618 (5.9-20 GHz) MMIC amplifier, increasing the power handling capability of transmitters requiring linear operation.
Det-Bias terminal. Simply connecting Det-Bias to the VD2 supply is a convenient method of biasing this detector network. The differential voltage between the Det-Ref and Det-Out bonding pads can be correlated to the RF power emerging from the RF Output port. No ground wires are needed because ground connections are made with plated through-holes to the backside of the device.
connections should be kept as short as possible to minimize inductance. For assemblies requiring long bond wires, multiple wires can be attached to the RF bonding pads. Thermosonic wedge is the preferred method for wire bonding to the gold bond pads. A guidedwedge at an ultrasonic power level 64 dB can be used for the 0.7 mil wire. The recommended wire bond stage temperature ± 2°C. GaAs MMICs are ESD sensitive. For more detailed information see Agilent Technologies' application note #999, "GaAs MMIC ESD, Die Attach and Bonding Guidelines."
The recommended DC bias condition is with both drains (VD1 and VD2) connected to single 4.5 volt supply and both gates (VG1 and VG2) connected to an adjustable negative voltage supply. The gate voltage is adjusted for a total drain supply current of typically 250 mA. The RF input and output are ACcoupled. An optional output power detector network is also provided. Detector sensitivity can be adjusted by biasing the diodes with typically to 5 volts applied to the
Electrically and thermally conductive epoxy die attach is the preferred assembly method. Solder die attach using a fluxless gold-tin (AuSn) solder preform can also be used. The device should be attached to an electrically conductive surface to complete the DC and RF ground paths. The backside metallization on the device is gold. It is recommended that the electrical connections to the bonding pads be made using 0.7-1.0 mil diameter gold wire. The microwave/millimeter-wave
PN# 3, "HMMC-5040 and HMMC5032 Demo, 20-32 GHz High Gain Medium Power Amp," and PN# 4, "HMMC-5032 Intermodulation Distortion."
|Some Part number from the same manufacture Agilent Technologies, Inc.|
|HMMC-5033 17.7-32 GHZ Power Amplifier|
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|HMMC-5038 38 GHZ Lna|
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|HMMC-5620 6-20 GHZ High-gain Amplifier|
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