Details, datasheet, quote on part number: AD8009-EB
Description1 Ghz, 5,500 V/µs Low Distortion Amplifier
CompanyAnalog Devices
DatasheetDownload AD8009-EB datasheet
Cross ref.Similar parts: OPA685, THS3201, THS4271
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Features, Applications

FEATURES Ultrahigh Speed V/ s Slew Rate, 4 V Step, 545 ps Rise Time, 2 V Step, = +2 Large Signal Bandwidth 440 MHz, +2 320 MHz, = +10 Small Signal Bandwidth (­3 dB) 1 GHz, +1 700 MHz, = +2 Settling Time 2 V Step, = +2 Low Distortion Over Wide Bandwidth SFDR ­44 dBc @ 150 MHz, 2 V p-p ­41 dBc @ 150 MHz, 2 V p-p 3rd Order Intercept (3IP) 26 dBm @ 70 MHz, +10 18 dBm @ 150 MHz, = +10 Good Video Specifications Gain Flatness to 75 MHz 0.01% Differential Gain Error, 150 0.01 Differential Phase Error, = 150 High Output Drive 175 mA Output Load Drive 10 dBm with ­38 dBc SFDR @ 70 MHz, = +10 Supply Operation 5 V Voltage Supply 14 mA (Typ) Supply Current APPLICATIONS Pulse Amplifier IF/RF Gain Stage/Amplifiers High Resolution Video Graphics High Speed Instrumentations CCD Imaging Amplifier

PRODUCT DESCRIPTION The is an ultrahigh speed current feedback amplifier with a phenomenal 5,500 V/µs slew rate that results in a rise time of 545 ps, making it ideal as a pulse amplifier. The high slew rate reduces the effect of slew rate limiting and results in the large signal bandwidth of 440 MHz required for high resolution video graphic systems. Signal quality is maintained over a wide bandwidth with worst case distortion of ­40 dBc @ 250 MHz 1 V p-p). For applications with multitone signals such as IF signal chains, the third order Intercept of 12 dBm is achieved at the same frequency. This distortion performance coupled with the current feedback architecture make the AD8009 a flexible component for a gain stage amplifier in IF/RF signal chains. The AD8009 is capable of delivering over mA of load current and will drive four back terminated video loads while maintaining low differential gain and phase error of 0.02% and 0.04° respectively. The high drive capability is also reflected in the ability to deliver 10 dBm of output power @ 70 MHz with ­38 dBc SFDR. The AD8009 is available in a small SOIC package and will operate over the industrial temperature range to +85°C. The AD8009 is also available an SOT-23-5 and will operate over the commercial temperature range to 70°C.

Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices.

One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: Fax: 781/326-8703 © Analog Devices, Inc., 2000

Model DYNAMIC PERFORMANCE ­3 dB Small Signal Bandwidth, 0.2 V p-p R Package RT Package

Large Signal Bandwidth, 2 V p-p Gain Flatness 0.1 dB, 0.2 V p-p Slew Rate Settling Time to 0.1% Rise and Fall Time HARMONIC/NOISE PERFORMANCE SFDR 2 V p-p SFDR 2 V p-p Third Order Intercept (3IP) W.R.T. Output, = +10 Input Voltage Noise Input Current Noise Differential Gain Error Differential Phase Error DC PERFORMANCE Input Offset Voltage

TMIN­TMAX Offset Voltage Drift ­Input Bias Current TMIN­TMAX +Input Bias Voltage TMIN­TMAX Open Loop Transresistance TMIN­TMAX INPUT CHARACTERISTICS Input Resistance Input Capacitance Input Common-Mode Voltage Range Common-Mode Rejection Ratio OUTPUT CHARACTERISTICS Output Voltage Swing Output Current Short Circuit Current POWER SUPPLY Operating Range Quiescent Current Power Supply Rejection Ratio


Supply Voltage. 12.6 V Internal Power Dissipation2 Small Outline Package (R). 0.75 Watts Input Voltage (Common Mode). ± VS Differential Input Voltage. 3.5 V Output Short Circuit Duration. Observe Power Derating Curves Storage Temperature Range R Package. to +125°C Operating Temperature Range (A Grade). to +85°C Operating Temperature Range (J Grade). to 70°C Lead Temperature Range (Soldering 10 sec). 300°C

NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 Specification is for device in free air: 8-Lead SOIC Package: 5-Lead SOT-23 Package: = 240°C/W.

The maximum power that can be safely dissipated by the AD8009 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the plastic, approximately 150°C. Exceeding this limit temporarily may cause a shift in parametric performance due to a change in the stresses exerted on the die by the package. Exceeding a junction temperature of 175°C for an extended period can result in device failure. While the AD8009 is internally short circuit protected, this may not be sufficient to guarantee that the maximum junction temperature (150°C) is not exceeded under all conditions. To ensure proper operation, it is necessary to observe the maximum power derating curves.

Figure 3. Plot of Maximum Power Dissipation vs. Temperature
Package Description Die 8-Lead SOIC 8-Lead SOIC 8-Lead SOIC 5-Lead SOT-23 Evaluation Board
Package Option SO-8 13" Tape and Reel 7" Tape and Reel 13" Tape and Reel 7" Tape and Reel SO-8

CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AD8009 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.


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