Details, datasheet, quote on part number: Z0107MA0,412
PartZ0107MA0,412
CategoryDiscrete Semiconductor Products
TitleTriac Discrete Semiconductor Product 1A 600V Logic - Sensitive Gate
Description
CompanyNXP Semiconductors
DatasheetDownload Z0107MA0,412 datasheet
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Specifications 
Triac TypeLogic - Sensitive Gate
ConfigurationSingle
Voltage - Off State600V
Current - On State (It (RMS)) (Max)1A
Voltage - Gate Trigger (Vgt) (Max)1.3V
Current - Gate Trigger (Igt) (Max)5mA
Current - Hold (Ih) (Max)10mA
Current - Non Rep. Surge 50, 60Hz (Itsm)12.5A, 13.8A
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
PackagingBulk
Lead Free StatusLead Free
RoHS StatusRoHS Compliant

 

Features, Applications

Planar passivated very sensitive gate four quadrant triac SOT54 (TO-92) plastic package intended for use in applications requiring enhanced noise immunity and direct interfacing to logic ICs and low power gate drivers.

Direct interfacing to logic level ICs Enhanced current surge capability Enhanced noise immunity High blocking voltage capability Planar passivated for voltage ruggedness and reliability Triggering in all four quadrants Very sensitive gate

General purpose low power motor control Home appliances Industrial process control Low power AC Fan controllers

Table 1. Symbol VDRM ITSM Quick reference data Parameter repetitive peak off-state voltage non-repetitive peak on-state current RMS on-state current full sine wave; Tj(init) = 25 C; = 20 ms; see Figure 4; see Figure 5 full sine wave; Tlead 45 C; see Figure 1; see Figure 3; see Figure 2 Conditions Min Typ Max Unit 600 V

Quick reference data...continued Parameter gate trigger current Conditions A; T2+ G+; = 25 C; see Figure A; T2+ G-; = 25 C; see Figure A; T2- G-; = 25 C; see Figure A; T2- G+; = 25 C; see Figure 7 Min Typ Max Unit mA

Table 2. Pin 2 3 Pinning information Symbol Description G T1 main terminal 2 gate main terminal 1

Table 3. Ordering information Package Name Z0107MA0 TO-92 Description plastic single-ended leaded (through hole) package; 3 leads Version SOT54 Type number

All information provided in this document is subject to legal disclaimers.

Table 4. Symbol VDRM IT(RMS) ITSM Limiting values Parameter repetitive peak off-state voltage RMS on-state current non-repetitive peak on-state current I2t for fusing full sine wave; Tlead 45 C; see Figure 1; see Figure 3; see Figure 2 full sine wave; Tj(init) = 25 C; = 20 ms; see Figure 4; see Figure 5 full sine wave; Tj(init) = 25 C; ms I2t dIT/dt = 10 ms; sine-wave pulse = 20 mA; dIG/dt = 100 mA/s; = 20 mA; dIG/dt = 100 mA/s; T2+ GIT = 20 mA; dIG/dt = 100 mA/s; T2- GIT = 20 mA; dIG/dt = 100 mA/s; T2- G+ IGM PGM PG(AV) Tstg Tj peak gate current peak gate power average gate power storage temperature junction temperature over any 20 ms period rate of rise of on-state current Conditions Min -40 Max Unit A2 s A/s W C

In accordance with the Absolute Maximum Rating System (IEC 60134).
RMS on-state current as a function of lead temperature; maximum values
RMS on-state current as a function of surge duration; maximum values

 

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