Details, datasheet, quote on part number: P4KE110C
PartP4KE110C
CategoryDiscrete => Diodes & Rectifiers => Avalanche Rectifier Diodes
DescriptionTransient Voltage Suppressor Diode
CompanyEIC Semiconductor Incorporated
DatasheetDownload P4KE110C datasheet
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Features, Applications

* 400W surge capability 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1 A above 10V

* Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, method 208 guaranteed * Polarity : Color band denotes cathode end except Bipolar. * Mounting position : Any * Weight : 0.339 gram

DEVICES FOR BIPOLAR APPLICATIONS For bi-directional use or CA Suffix Electrical characteristics apply in both directions MAXIMUM RATINGS

Peak Power Dissipation = 25 C, Tp=1ms (Note1) Steady State Power Dissipation 75 C Lead Lengths 0.375", (9.5mm) (Note 2) Peak Forward Surge Current, 8.3ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) (Note 3) Operating and Storage Temperature Range Note :

1 ) VBR measured after It applied for 300 s., It = square wave pulse or equivalent. = 3.5 Vmax., = 25 Amps. ( 6.8 Volts thru = 5.0 Vmax., = 25 Amps. ( 100 Volts thru 440 Volts ) per 1/2 square or equivalent sine wave. = 8.3 ms, duty cycle = 4 pulses per minute maximum. 3 ) For Bipolar types having of 10 Volts and under, the IR limit is doubled.


 

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