Details, datasheet, quote on part number: SFO1
PartSFO1
CategoryDiscrete => Diodes & Rectifiers
DescriptionSuper Fast Rectifier Diodes
CompanyEIC Semiconductor Incorporated
DatasheetDownload SFO1 datasheet
Quote
Find where to buy
 
  

 

Features, Applications

High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Super fast recovery time

* Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.339 gram

Rating 25 C ambient temperature unless otherw ise specified. Single phase, half w ave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Peak Forward Surge Current 8.3 ms. Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Peak Forward Voltage 1.5 A. Maximum DC Reverse Current at Rated DC Blocking Voltage 55 C

Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Junction Temperature Range Storage Temperature Range

1 ) Reverse Recovery Test Conditions 1.0 A, Irr 2 ) Measured at 1.0 MHz and applied reverse voltage V DC

FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM

NOTES : 1. Rise Time 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types.

FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES
FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES
AMBIENT TEMPERATURE, ( C) FIG.4 - TYPICAL FORWARD CHARACTERISTICS REVERSE CURRENT, MICROAMPERES

 

Related products with the same datasheet
SFO2
SFO3
SFO4
SFO5
SFO6
SFO7
SFO8
SFO9
Some Part number from the same manufacture EIC Semiconductor Incorporated
SFO2 Super Fast Rectifier Diodes
SFT1
SK12 Schottky Barrier Rectifier
SK22
SK32S
SK52S
SKN0S Surface Mount Schottky Barrier Rectifiers
SKN1S
SKN2S
SKN7 Schottky Barrier Rectifier
SKO2
SKT2
SKT2S
SKT3
SKT3S
SKT4
SKT4S
SKT5
SKT5S
SKT6
SKT6S
Same catergory

2N3485A : Package = TO-46 ;; Level = Jantxv ;; Vceo (V) = 60 ;; Vcbo (V) = 60 ;; Vebo (V) = 5 ;; Ic (A) = 0.60 ;; (Power W) ta = 0.5 ;; Rtja ( C/W) = 325 ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 120 ;; VCE(sat) (V) = 0.40.

X06FF3 : VRWM = 600V ;; Io(A) = .60 ;; Trr(nS) = 30 ;; Package = Axial-leaded,glass ;; Terminations = Leads.

XN05553XN5553 : . Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. Parameter Collector to base voltage Rating Emitter to base voltage of element Collector current Collector to emitter voltage Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Peak collector current Total power dissipation Overall Junction temperature Storage.

ZDT717 : Dual PNP Low Sat Transistor. SM-8 DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Tj:Tstg VALUE to +150 UNIT C PARAMETER Total Power Dissipation at Tamb = 25C* Any single die on Both die on equally.

BD3501R : 35 A, 100 V, SILICON, RECTIFIER DIODE. s: Package: 13MM, BOSCH, METAL PACKAGE-1 ; Number of Diodes: 1 ; VRRM: 100 volts ; IF: 35000 mA.

GF12P0SB100K : RES,TAPPED,CERMET,10 OHMS,300WVDC,10% +/-TOL,-250,250PPM TC,4747 CASE. s: Potentiometer Type: Trimmer ; Standards and Certifications: RoHS.

KX103J2 : RESISTOR, TEMPERATURE DEPENDENT, NTC, 10000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED ; Resistance Range: 10000 ohms ; Power Rating: 0.0300 watts (4.02E-5 HP) ; Operating Temperature: -80 to 135 C (-112 to 275 F).

MSV34060 : KU BAND, 0.4 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE. s: Diode Type: VARIABLE CAPACITANCE DIODE ; RoHS Compliant: RoHS.

RD10SLN-T1 : 10 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE. s: Diode Type: VOLTAGE REGULATOR DIODE.

RJR24CW101P : RESISTOR, TRIMMER, CERMET, 25 TURN(S), 0.5 W, 100 ohm. s: Category / Application: General Use ; Technology / Construction: Cermet ; Mounting / Packaging: ThroughHole, 3/8 INCH, SQUARE, 3 PINS ; Resistance Range: 100 ohms ; Tolerance: 10 +/- % ; Power Rating: 0.5000 watts (6.70E-4 HP) ; Operating Temperature: -55 to 150 C (-67 to 302 F).

SOC37000 : 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: ROHS COMPLIANT, LCC-3.

UNR2-14101.01KOHMS0.01%3PPM : RES,RADIAL,METAL FOIL,1.01K OHMS,.01% +/-TOL,-3,3PPM TC,5512 CASE. s: Category / Application: General Use ; Standards and Certifications: RoHS.

2N3055/6R1 : 15 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-204AA. s: Polarity: NPN ; Package Type: TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN.

32489R-LF1 : DATACOM TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: -40 to 125 C (-40 to 257 F) ; Standards: RoHS.

 
0-C     D-L     M-R     S-Z