Details, datasheet, quote on part number: SFP9624
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => P-Channel
Description250V P-channel A-FET
CompanyFairchild Semiconductor
DatasheetDownload SFP9624 datasheet
Find where to buy


Features, Applications

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current -10 A (Max.) @ VDS = -250V Low RDS(ON) : 1.65 (Typ.)

Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 " from case for 5-seconds

Symbol RJC RCS RJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 3.29 -62.5

Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( " Miller " ) Charge Min. Typ. Max. Units --nC V nA

Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

Test Condition Integral reverse pn-diode in the MOSFET C,IF=-2.7A diF/dt=100A/s

Notes ; Temperature 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction R =27*, Starting AS DD ISD< _300A/s, VDD_ _-2.7A, di/dt < <BVDSS , Starting J =25 Pulse Test : Pulse Width s, Duty Cycle O 5 Essentially Independent of Operating Temperature O

Ciss= Cgs+ C ( Cds= shorted ) gd Coss= Cds+ C gd


Some Part number from the same manufacture Fairchild Semiconductor
SFP9630 200V P-channel A-FET / Substitute of IRF9630
SFP9634 250V P-channel A-FET
SFP9640 200V P-channel A-FET / Substitute of IRF9640
SFP9640L 200V P-channel Logic Level A-FET
SFP9644 250V P-channel A-FET
SFP9Z14 60V P-channel A-FET / Substitute of IRF9Z14
SFP9Z24 60V P-channel A-FET / Substitute of IRF9Z24
SFP9Z34 60V P-channel A-FET / Substitute of IRF9Z34
SFR/U2955 Advanced Power MOSFET: -60v, -7.6a
SFR/U9014 Advanced Power MOSFET: -60v, -5.3a
SFR/U9024 Advanced Power MOSFET
SFR2955 60V P-channel A-FET
SFR9014 60V P-channel A-FET / Substitute of IRFR9014

1N4740A : 10V, 1W Zener Diode

CGS3315M : Clock Circuits CMOS Crystal Clock Generators

KSC5026M : NPN Silicon Transistor

TMC2072-1 : Databus ICs Genlocking Video Digitizer

74VHC27SJX : Logic - Gate And Inverter Integrated Circuit (ics) NOR Gate Tape & Reel (TR) 8mA, 8mA 2 V ~ 5.5 V; IC GATE NOR TRIPLE 3IN 14SOP Specifications: Number of Circuits: 3 ; Package / Case: 14-SOIC (0.209", 5.30mm Width) ; Logic Type: NOR Gate ; Packaging: Tape & Reel (TR) ; Mounting Type: Surface Mount ; Number of Inputs: 3 ; Current - Output High, Low: 8mA, 8mA ; Operating Temperature: -40C ~ 85C ; Voltage - Supply: 2 V ~

H11B255SD : Optoisolator - Transistor, Photovoltaic Output Channel Surface Mount 6-SMD; OPTOCOUPLER DARL-OUT 6-SMD Specifications: Voltage - Isolation: 5300Vrms ; Input Type: DC ; Output Type: Darlington with Base ; Current - Output / Channel: - ; Voltage - Output: 55V ; Vce Saturation (Max): 1V ; Current Transfer Ratio (Min): 100% @ 10mA ; Mounting Type: Surface Mount ; Package / Case: 6-SMD ; Packaging: Tape &

KSC3503DSTSSTU : Transistor (bjt) - Single Discrete Semiconductor Product 100mA 300V 7W NPN; TRANSISTOR NPN 300V 100MA TO-126 Specifications: Transistor Type: NPN ; Voltage - Collector Emitter Breakdown (Max): 300V ; Current - Collector (Ic) (Max): 100mA ; Power - Max: 7W ; DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V ; Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA ; Frequency - Transition: 150MHz ; Current - C

74ABT162601DGGRE4 : ABT SERIES, QUAD 4-BIT DRIVER, TRUE OUTPUT, PDSO48 Specifications: Technology: BICMOS ; Device Type: Line / Bus Driver ; Supply Voltage: 5V ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Package Type: TSSOP, 6.10 MM, MO-153, TSSOP-48 ; Pins: 48

Same catergory

CM400DU-12F : 400A Igbt Module For High Power Switching Use. APPLICATION General purpose inverters & Servo controls, etc Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short.

MBR350 : 3A 50V Schottky Rectifier , Package: Axial Lead, Pins=2. . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage, high- frequency inverters, free wheeling diodes, and polarity protection diodes. Extremely Low vF Low Power Loss/High.

MMBT3640 : PNP Switching Transistor. This device is designed for very high speed saturated switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous *These ratings are limiting values above which the serviceability of any semiconductor.

TCP058A : Thyristor Surge Suppressor. Thyristor Surge Suppressor, Package : S08.

MBR30L45 : 30 A, 45 V L-Series Schottky Rectifier Enhanced Schottky rectifiers with lower Vf, higher surge, and lower Ir parameters.

BAS19WTP : 0.2 A, SILICON, SIGNAL DIODE. s: Package: PLASTIC PACKAGE-3 ; Number of Diodes: 1 ; IF: 200 mA ; RoHS Compliant: RoHS.

BF258.MOD : 100 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD. s: Polarity: NPN ; Package Type: TO-3, TO-39, HERMETIC SEALED, METAL, TO-39, 3 PIN.

BMOD0058E016 : CAPACITOR, ELECTRIC DOUBLE LAYER. s: Technology: ELECTRIC DOUBLE LAYER ; Applications: General Purpose.

FMMT625QTA : SMALL SIGNAL TRANSISTOR. BVCEO > 150V Maximum Continuous Collector Current 1A 625mW Power dissipation hFE characterised to 3.0A Totally Lead-Free & Fully RoHS compliant (Notes & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP capable (Note 4) Case: SOT23 Case Material: molded plastic, "Green" molding compound.

HFA120FA60PBF : 75 A, 600 V, SILICON, RECTIFIER DIODE. s: Diode Type: General Purpose, RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 75000 mA ; Package: SOT-227, 4 PIN ; Pin Count: 4 ; Number of Diodes: 2.

IRFC37N50A : 500 V, 0.141 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 500 volts ; rDS(on): 0.1410 ohms ; Package Type: 5 INCH, WAFER ; Number of units in IC: 1.


TPD : RESISTOR, NETWORK, FILM, BUSSED, 1.09; 2; 2.25; 2.8 W, THROUGH HOLE MOUNT. s: Configuration: Chip Array ; Category / Application: General Use ; Technology / Construction: Thin Film (Chip) ; Mounting / Packaging: ThroughHole, DIP-12 ; Temperature Coefficient: 5 ±ppm/°C ; Operating DC Voltage: 100 volts ; Operating Temperature: -55 to 70 C (-67 to 158 F).

VI20M120C-M3/4W : RECTIFIER DIODE. s: Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier.

2N2102-JRQ-A : 1000 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD. s: Polarity: NPN ; Package Type: TO-3, TO-39, HERMETIC SEALED, METAL, TO-39, 3 PIN.

5050C63M500FP0D : CAP,AL2O3,6MF,500VDC,20% -TOL,20% +TOL. s: Applications: General Purpose ; Electrolytic Capacitors: Aluminum Electrolytic ; RoHS Compliant: Yes.

0-C     D-L     M-R     S-Z