Details, datasheet, quote on part number: SFP9630
PartSFP9630
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => P-Channel
Description200V P-channel A-FET / Substitute of IRF9630
CompanyFairchild Semiconductor
DatasheetDownload SFP9630 datasheet
Cross ref.Similar parts: IRF9630
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Features, Applications
FEATURES

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current -10 A (Max.) @ VDS = -200V Low RDS(ON) : 0.581 (Typ.)

Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 " from case for 5-seconds

Symbol RJC RCS RJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 1.79 -62.5

Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( " Miller " ) Charge Min. Typ. Max. Units --nC V nA

Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

Test Condition Integral reverse pn-diode in the MOSFET C,IF=-6.5A diF/dt=100A/s

Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature R =27*, Starting _400A/s, <-6.5A, di/dt < <BV , Starting O 4 Pulse Test : Pulse Width = 250 s, Duty Cycle O 5 Essentially Independent of Operating Temperature O


Ciss= Cgs+ C ( Cds= shorted ) gd Coss= Cds+ C gd

 

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