Details, datasheet, quote on part number: SFP9634
PartSFP9634
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => P-Channel
Description250V P-channel A-FET
CompanyFairchild Semiconductor
DatasheetDownload SFP9634 datasheet
Quote
Find where to buy
 
  

 

Features, Applications
FEATURES

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current -10 A (Max.) @ VDS = -250V Low RDS(ON) : 0.876 (Typ.)

Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 " from case for 5-seconds

Symbol RJC RCS RJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 1.79 -62.5

Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( " Miller " ) Charge Min. Typ. Max. Units --nC V nA

Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

Test Condition Integral reverse pn-diode in the MOSFET C,IF=-5.0A diF/dt=100A/s

Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature R =27*, Starting G J ISD < -5.0A, di/dt < 400A/ s, VDD < BVDSS , Starting 4 O Pulse Test : Pulse Width = 250 s, Duty Cycle < Essentially Independent of Operating Temperature 5 O


Ciss= Cgs+ C ( Cds= shorted ) gd Coss= Cds+ C gd

 

Some Part number from the same manufacture Fairchild Semiconductor
SFP9640 200V P-channel A-FET / Substitute of IRF9640
SFP9640L 200V P-channel Logic Level A-FET
SFP9644 250V P-channel A-FET
SFP9Z14 60V P-channel A-FET / Substitute of IRF9Z14
SFP9Z24 60V P-channel A-FET / Substitute of IRF9Z24
SFP9Z34 60V P-channel A-FET / Substitute of IRF9Z34
SFR/U2955 Advanced Power MOSFET: -60v, -7.6a
SFR/U9014 Advanced Power MOSFET: -60v, -5.3a
SFR/U9024 Advanced Power MOSFET
SFR/U9034
SFR/U9110
SFR/U9120
SFR/U9130
SFR/U9210
SFR/U9214
SFR/U9220
SFR/U9224
SFR2955 60V P-channel A-FET
SFR9014 60V P-channel A-FET / Substitute of IRFR9014
SFR9024 60V P-channel A-FET / Substitute of IRFR9024
SFR9034 60V P-channel A-FET
Same catergory

2SK2412 : Switching N-channel Power MOSFET Industrial Use. The 2SK2412 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. PACKAGE DIMENSIONS Low Ciss 860 pF TYP. Built-in G-S Gate Protection Diodes High Avalanche Capability Ratings Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the of quality.

HGTA32N60E2 : 32a, 600v N-channel Igbt. 5 EMITTER COLLECTOR (FLANGE) 4 EMITTER KELVIN 3 COLLECTOR 2 NO CONNECTION 1 GATE 32A, 600V Latch Free Operation Typical Fall Time 620ns High Input Impedance Low Conduction Loss The IGBT is a MOS gated high voltage switching device combining the best of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state.

MPQ7043 : Quad Transistors.

PC100F5 : Device = FRD ;; Maxisimam Operating Junction Temperature( C ) = 150 ;; Storage Temperature( C ) = -40 to +125 ;; Circuit = Cathode Common ;; Data Sheet(pdf) = _pc100f5.pdf ;; Outline(dxf) = Pc100f6.dxf ;; Remarks =   ;; = ;; = ;; = ;;.

S16-4148 : Diode Array, Package : SOIC16. 8 Isolated lines Standard SOIC 16 pin Surface Mount Package UL 94V-0 Flammability Classification Molded SOIC 16 Pin Weight: 2.5 grams (approximate) Marking: Logo, device number, date code Pin #1 defined by DOT on top of package 8 Pin pairs Operating Temperatures: to +1500C Storage Temperature: to +1500C Forward Surge Current: 2.0Amps (8.3 mSec) ELECTRICAL.

KTC3770T : RF/VHF/UHF Transistor VHF/UHF Wide Band Amplifier Application.. CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO PC Tj Tstg RATING UNIT mA mW CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector Output Capacitance Transition Frequency.

03028-BP330AFZB : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.000033 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 3.30E-5 microF ; Capacitance Tolerance: 1 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology.

03028-BX102BJZB : CAPACITOR, CERAMIC, MULTILAYER, 100 V, BX, 0.001 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 1.00E-3 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 100 volts ; Mounting Style: Surface Mount Technology.

0805N9R1B101NT : CAPACITOR, CERAMIC, MULTILAYER, 100 V, C0G, 0.0000091 uF, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 9.10E-6 microF ; Capacitance Tolerance: 1 (+/- %) ; WVDC: 100 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style:.

FDC6303ND84Z : 680 mA, 25 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 25 volts ; rDS(on): 0.4500 ohms ; Number of units in IC: 2.

LZT5.6A : 5.57 V, 0.15 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE. s: Arrangement: Common Anode ; Diode Type: VOLTAGE REGULATOR DIODE ; Package: PLASTIC PACKAGE-3 ; Pin Count: 3 ; Number of Diodes: 2.

1622865-5 : RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 1 %, 200 ppm, 18.2 ohm, SURFACE MOUNT, 0603. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 0603, CHIP, ROHS COMPLIANT ; Resistance Range: 18.2 ohms ; Tolerance: 1 +/- % ; Temperature Coefficient: 200 ±ppm/°C.

1N5313CSMG4 : 4.3 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE. s: Diode Type: VOLTAGE REGULATOR DIODE ; RoHS Compliant: RoHS.

2N7081-220M-ISOR1 : 11 A, 100 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 100 volts ; rDS(on): 0.1500 ohms ; Package Type: TO-220, HERMETIC SEALED, ISOLATED TO-220, 3 PIN ; Number of units in IC: 1.

 
0-C     D-L     M-R     S-Z