Details, datasheet, quote on part number: SFP9Z14
PartSFP9Z14
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => P-Channel
Description60V P-channel A-FET / Substitute of IRF9Z14
CompanyFairchild Semiconductor
DatasheetDownload SFP9Z14 datasheet
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Features, Applications
FEATURES

n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge 175 C Opereting Temperature n Extended Safe Operating Area n Lower Leakage Current -10 µA (Max.) @ VDS -60V n Low RDS(ON) : 0.362 (Typ.)

Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds

Symbol RJC RCS RJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 3.95 -62.5

Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain("Miller") Charge Min. Typ. Max. Units --nC S V

Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

Test Condition Integral reverse pn-diode in the MOSFET C,IF=-6.7A diF/dt=100A/µs

Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature VDD=-25V, RG=27*, Starting =25ooC -6.7A, di/dt _ 200A/µs, VDD< _ BVDSS , Starting 2% O Pulse Test : Pulse Width = 250µs, Duty Cycle< 5 Essentially Independent of Operating Temperature O



 

Some Part number from the same manufacture Fairchild Semiconductor
SFP9Z24 60V P-channel A-FET / Substitute of IRF9Z24
SFP9Z34 60V P-channel A-FET / Substitute of IRF9Z34
SFR/U2955 Advanced Power MOSFET: -60v, -7.6a
SFR/U9014 Advanced Power MOSFET: -60v, -5.3a
SFR/U9024 Advanced Power MOSFET
SFR/U9034
SFR/U9110
SFR/U9120
SFR/U9130
SFR/U9210
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SFR/U9220
SFR/U9224
SFR2955 60V P-channel A-FET
SFR9014 60V P-channel A-FET / Substitute of IRFR9014
SFR9024 60V P-channel A-FET / Substitute of IRFR9024
SFR9034 60V P-channel A-FET
SFR9110 100V P-channel A-FET / Substitute of IRFR9110
SFR9120 100V P-channel A-FET / Substitute of IRFR9120
SFR9130 100V P-channel A-FET
SFR9210 200V P-channel A-FET / Substitute of IRFR9210
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