Details, datasheet, quote on part number: SFRU9120
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs
DescriptionAdvanced Power MOSFET
CompanyFairchild Semiconductor
DatasheetDownload SFRU9120 datasheet
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Features, Applications

n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current 10 µA (Max.) @ VDS -100V n Lower RDS(ON) : 0.444 (Typ.)

Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt

Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds

Symbol RJC RJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 50 110

* When mounted on the minimum pad size recommended (PCB Mount).

Symbol BVDSS BV/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-to-Source Leakage Current Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain("Miller") Charge Min. Typ. Max. Units --nC S V

Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge

Test Condition Integral reverse pn-diode in the MOSFET C,IF=-6A diF/dt=100A/µs

Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature VDD=-25V, RG=27*, Starting _ -6A, di/dt _ 350A/µs, VDD < _ BVDSS , Starting C O ISD < 4 Pulse Test : Pulse Width = 250µs, Duty Cycle< O 5 Essentially Independent of Operating Temperature O


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