Details, datasheet, quote on part number: GUF10A
PartGUF10A
CategoryDiscrete => Diodes & Rectifiers => Switching Diodes
DescriptionDiscrete, Rectifiers, Mega Rectifiers
CompanyFCI Semiconductor
DatasheetDownload GUF10A datasheet
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Features, Applications

Description
Features

n HIGH TEMPERATURE METALLURGICALLY BONDED CONSTRUCTION n SINTERED GLASS CAVITY-FREE JUNCTION n 1.0 AMP OPERATION = 55°C, WITH NO THERMAL RUNAWAY n TYPICAL < 0.2 µAmp

Electrical Characteristics @ 25 oC. Maximum Ratings Peak Repetitive Reverse Voltage...VRRM RMS Reverse Voltage...VR(rms) DC Blocking Voltage...VDC Average Forward Rectified Current...IF(av) Current 3/8" Lead Length = 55°C Non-Repetitive Peak Forward Surge Current...IFSM 8.3mS, ½ Sine Wave Superimposed on Rated Load Forward Voltage @ Rated Forward Current and 25°C...VF Full Load Reverse Current...IR(av) Full Cycle Average 55°C DC Reverse Current...IR @ Rated DC Blocking Voltage ° C

Typical Junction Capacitance...CJ (Note 1) Typical Thermal Resistance...RJC (Note 2) Typical Reverse Recovery Time...tRR (Note 3) Operating & Storage Temperature Range...TJ, TSTRG

= TJ max. 8.3 mS Single Half Sine Wave (Jedec Method)
Number of Cycles 60 HZ Typical Instantaneous Forward Characteristics
Reverse Voltage (Volts) Typical Reverse Characteristics

Ratings at 25 Deg. C ambient temperature unless otherwise specified. Single Phase Half Wave, 60 HZ Resistive or Inductive Load.

NOTES: 1. Measured @ 1 MHZ and applied reverse voltage 4.0V. 2. Thermal Resistance from Junction to Ambient at 3/8" Lead Length, P.C. Board Mounted. 3. Reverse Recovery Condition = 1.0A, IRR = 0.25A.


 

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