Details, datasheet, quote on part number: MBM29DL16XTE90
CategoryMemory => Flash => Single 3V
TitleSingle 3V
Description2M * 8, 1M * 16
CompanyFujitsu Microelectronics, Inc.
DatasheetDownload MBM29DL16XTE90 datasheet


Features, Applications

0.23 m Process Technology Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank sizes (Refer to "MBM29DL16XTE/BE Device Bank Divisions Table" in sGENERAL DESCRIPTION) Host system can program or erase in one bank, then immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program (Continued)

Part No. Address Access Time (Max) CE Access Time (Max) OE Access Time (Max) Power Supply Voltage 3.0 V

(Continued) Single 3.0 V read, program, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands Uses same software commands as E2PROMs Compatible with JEDEC-standard world-wide pinouts 48-pin TSOP(1) (Package suffix: TN Normal Bend Type, TR Reversed Bend Type) 48-ball FBGA (Package suffix: PBT) Minimum 100,000 program/erase cycles High performance 70 ns maximum access time Sector erase architecture Eight 4K word and thirty one 32K word sectors in word mode Eight 8K byte and thirty one 64K byte sectors in byte mode Any combination of sectors can be concurrently erased. Also supports full chip erase. Boot Code Sector Architecture T = Top sector B = Bottom sector HiddenROM region 64K byte of HiddenROM, accessible through a new "HiddenROM Enable" command sequence Factory serialized and protected to provide a secure electronic serial number (ESN) WP/ACC input pin At VIL, allows protection of boot sectors, regardless of sector group protection/unprotection status At VACC, increases program performance Embedded EraseTM* Algorithms Automatically pre-programs and erases the chip or any sector Embedded ProgramTM* Algorithms Automatically writes and verifies data at specified address Data Polling and Toggle Bit feature for detection of program or erase cycle completion Ready/Busy output (RY/BY) Hardware method for detection of program or erase cycle completion Automatic sleep mode When addresses remain stable, automatically switch themselves to low power mode. Low VCC write inhibit 2.5 V Program Suspend/Resume Suspends the program operation to allow a read in another sector with in the same device Erase Suspend/Resume Suspends the erase operation to allow a read data and/or program in another sector within the same device Sector group protection Hardware method disables any combination of sector groups from program or erase operations Sector Group Protection Set function by Extended sector group protection command Fast Programming Function by Extended Command Temporary sector group unprotection Temporary sector group unprotection via the RESET pin. In accordance with CFI (Common Flash Memory Interface)

Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.

The MBM29DL16XTE/BE are 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29DL16XTE/BE are offered 48-pin TSOP(1) and 48-ball FBGA Package. These devices are designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. The devices can also be reprogrammed in standard EPROM programmers. MBM29DL16XTE/BE are organized into two banks, Bank 1 and Bank 2, which are considered to be two separate memory arrays for operations. It is the Fujitsu's standard 3 V only Flash memories with the additional capability of allowing a normal non-delayed read access from a non-busy bank of the array while an embedded write (either a program or an erase) operation is simultaneously taking place on the other bank. In the MBM29DL16XTE/BE, a new design concept is implemented, so called "Sliding Bank Architecture". Under this concept, the MBM29DL16XTE/BE can be produced a series of devices with different Bank 1/Bank 2 size combinations; 0.5 Mb/15.5 Mb, 2 Mb/14 Mb, 4 Mb/12 Mb, 8 Mb/8 Mb. The standard MBM29DL16XTE/BE offer access times 70 ns and 90 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the devices have separate chip enable (CE), write enable (WE), and output enable (OE) controls. The MBM29DL16XTE/BE are pin and command set compatible with JEDEC standard E2PROMs. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the devices is similar to reading from 5.0 V and 12.0 V Flash or EPROM devices. The MBM29DL16XTE/BE are programmed by executing the program command sequence. This will invoke the Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. Typically, each sector can be programmed and verified in about 0.5 seconds. Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase Algorithm which is an internal algorithm that automatically preprograms the array it is not already programmed before executing the erase operation. During erase, the devices automatically time the erase pulse widths and verify proper cell margin. A sector is typically erased and verified in 1.0 second. (If already completely preprogrammed.) The devices also feature a sector erase architecture. The sector mode allows each sector to be erased and reprogrammed without affecting other sectors. The MBM29DL16XTE/BE are erased when shipped from the factory. The devices feature single 3.0 V power supply operation for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. A low VCC detector automatically inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling DQ7, by the Toggle Bit feature DQ6, or the RY/BY output pin. Once the end of a program or erase cycle has been completed, the devices internally reset to the read mode. Fujitsu's Flash technology combines years of EPROM and E2PROM experience to produce the highest levels of quality, reliability, and cost effectiveness. The MBM29DL16XTE/BE memories electrically erase the entire chip or all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed one byte/word at a time using the EPROM programming mechanism of hot electron injection.


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