Details, datasheet, quote on part number: BAR99E6327
CategoryDiscrete => Diodes & Rectifiers => Switching Diodes
DescriptionSilicon Switching Diode
CompanyInfineon Technologies Corporation
DatasheetDownload BAR99E6327 datasheet
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Features, Applications

Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, 1 s Total power dissipation, 54 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS

For detailed information see chapter Package Outlines. Package mounted on epoxy pcb mm/6 cm2 Cu.

Electrical Characteristics = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) 100 A Forward voltage 150 mA Reverse current C AC characteristics Diode capacitance = 1 MHz Reverse recovery time = 10 mA, = 10 mA, = 100 measured 1 mA Test circuit for reverse recovery time CD trr pF ns V(BR) VF IR

Forward current = f (TA*; TS) * Package mounted on epoxy


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