Details, datasheet, quote on part number: BAS125-04
CategoryDiscrete => Diodes & Rectifiers => Schottky Diodes
DescriptionSilicon Low Leakage Diode
CompanyInfineon Technologies Corporation
DatasheetDownload BAS125-04 datasheet
Find where to buy


Features, Applications

Silicon Schottky Diodes For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage

ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAS 125 BAS 125-04 BAS 125-05 BAS 125-06 Marking = C1 Pin Configuration 2 = n.c. = A1/2 Package SOT-23

Maximum Ratings Parameter Diode reverse voltage Forward current Surge forward current (t< 100s) Total power dissipation 59 C BAS 34 C BAS -05 -06 Junction temperature Storage temperature Tj Tstg Symbol VR IF IFSM Ptot C Value 500 mW Unit V mA

Thermal Resistance Parameter Junction - ambient 1) BAS 125 Junction - ambient 1) BAS -05 -06 Junction - soldering point BAS 125 Junction - soldering point BAS -05 -06 Symbol RthJA RthJS Value Unit K/W

Electrical Characteristics = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current = 25 Forward voltage 100 150 typ. max.

AC Characteristics Diode capacitance = 1 MHz Differential forward resistance = 5 mA, = 10 kHz Forward voltage matching 1.1 pF

1) Package mounted on alumina VF is the difference between the lowest and the highest VF in the component

Forward current = f (TA*, TS) *Package mounted on alumina BAS -05, -06


Related products with the same datasheet
Some Part number from the same manufacture Infineon Technologies Corporation
BAS125-04E6327 Silicon Low Leakage Diode
BAS125-04W Silicon Schottky Diode
BAS125-05 Silicon Low Leakage Diode
BAS125-05W Silicon Schottky Diode
BAS125-06 Silicon Low Leakage Diode
BAS125-06W Silicon Schottky Diode
BAS125-07 Silicon Low Leakage Diode
BAS125-07W Silicon Schottky Diode
BAS125E6327 Silicon Low Leakage Diode
BAS125W Silicon Schottky Diode
BAS16 Silicon Switching Diode
BAS16S Silicon Switching Diode Array
BAS16U Diodes For High Speed Switching Applications
BAS16W Silicon Switching Diode
BAS170W Silicon Schottky Diode
BAS19 Silicon Switching Diode

HYB511000BJ-60 : 1M X 1bit DRAM

PSB4860H : Speech Terminals Sophisticated Digital Answering Machine With Full-duplex Speakerphone

SEROCCO-D : Dma Integrated Serial Communication Controller

SFH309FA-3/-4 : Silicon NPN Phototransistor

BFR183F : NPN Silicon RF Transistor

V23870-A2111-K200 : Bi-directional Pigtail SFF Transceiver 155 Mbit/s, 1310 nm Tx / 1550 nm Rx

BSC030N03MS G : Fet - Single Discrete Semiconductor Product 100A 30V 69W Surface Mount; MOSFET N-CH 30V 100A TDSON-8 Specifications: Mounting Type: Surface Mount ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 30V ; Current - Continuous Drain (Id) @ 25 C: 100A ; Rds On (Max) @ Id, Vgs: 3 mOhm @ 30A, 10V ; Input Capacitance (Ciss) @ Vds: 5700pF @ 15V ; Power - Max: 69W ; Packaging: Cut

BA 595 E6327 : Rf Diode Discrete Semiconductor Product 50mA 50V PIN - Single; DIODE RF SW 50V 50MA SOD-323 Specifications: Package / Case: SC-76, SOD-323 ; Packaging: Tape & Reel (TR) ; Current - Max: 50mA ; Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz ; Diode Type: PIN - Single ; Resistance @ If, F: 7 Ohm @ 10mA, 100MHz ; Voltage - Peak Reverse (Max): 50V ; Lead Free Status: Lead Free ; RoHS Status: RoHS

BAS 16 B5003 : Diodes, Rectifier - Single Discrete Semiconductor Product 250mA (DC) 80V Standard; DIODE SW SGL HS 80V 250MA SOT-23 Specifications: Diode Type: Standard ; Voltage - DC Reverse (Vr) (Max): 80V ; Current - Average Rectified (Io): 250mA (DC) ; Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA ; Reverse Recovery Time (trr): 4ns ; Current - Reverse Leakage @ Vr: 1A @ 75V ; Speed: Fast Recovery =< 500ns,>200mA (Io)

PTFA261702E : 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET Specifications: Polarity: N-Channel ; Operating Mode: Enhancement ; V(BR)DSS: 65 volts ; Package Type: GREEN, H-30275-4, 4 PIN ; Number of units in IC: 2

0-C     D-L     M-R     S-Z