Details, datasheet, quote on part number: BAS125-05E6327
CategoryDiscrete => Diodes & Rectifiers => Schottky Diodes
DescriptionSilicon Low Leakage Diode
CompanyInfineon Technologies Corporation
DatasheetDownload BAS125-05E6327 datasheet
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Features, Applications

Silicon Schottky Diodes For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage

ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAS 125 BAS 125-04 BAS 125-05 BAS 125-06 Marking = C1 Pin Configuration 2 = n.c. = A1/2 Package SOT-23

Maximum Ratings Parameter Diode reverse voltage Forward current Surge forward current (t< 100s) Total power dissipation 59 C BAS 34 C BAS -05 -06 Junction temperature Storage temperature Tj Tstg Symbol VR IF IFSM Ptot C Value 500 mW Unit V mA

Thermal Resistance Parameter Junction - ambient 1) BAS 125 Junction - ambient 1) BAS -05 -06 Junction - soldering point BAS 125 Junction - soldering point BAS -05 -06 Symbol RthJA RthJS Value Unit K/W

Electrical Characteristics = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current = 25 Forward voltage 100 150 typ. max.

AC Characteristics Diode capacitance = 1 MHz Differential forward resistance = 5 mA, = 10 kHz Forward voltage matching 1.1 pF

1) Package mounted on alumina VF is the difference between the lowest and the highest VF in the component

Forward current = f (TA*, TS) *Package mounted on alumina BAS -05, -06


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