Details, datasheet, quote on part number: BC848CWE6327
CategoryDiscrete => Transistors => Bipolar => General Purpose
DescriptionNPN Silicon af Transistor
CompanyInfineon Technologies Corporation
DatasheetDownload BC848CWE6327 datasheet
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Features, Applications

For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types:

Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Peak base current Peak emitter current Total power dissipation, 124 C Junction temperature Storage temperature Symbol VCEO VCBO VCES VEBO IC ICM IBM IEM Ptot Tj Tstg BC847W BC848W Unit mA V

Thermal Resistance Junction - soldering point 1) RthJS
Symbol min. DC Characteristics Collector-emitter breakdown voltage = 10 mA, = 0
Electrical Characteristics = 25C, unless otherwise specified. Parameter Unit
1For calculation of R thJA please refer to Application Note Thermal Resistance

Electrical Characteristics = 25C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage = 10 A, VBE = 0

Emitter-base breakdown voltage = 1 A, = 0 Collector cutoff current VCB = 0 Collector cutoff current VCB C DC current gain = 10 A, VCE 5 V hFE -group A hFE -group B hFE -group C DC current gain = 2 mA, VCE 5 V hFE -group A hFE -group B hFE -group C Collector-emitter saturation = 10 mA, = 100 mA, 5 mA Base-emitter saturation voltage = 10 mA, = 100 mA, 5 mA Base-emitter voltage = 2 mA, VCE = 10 mA, VCE 5 V


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