|Category||Memory => FIFO|
|Description||256 X 9 Asyncfifo, 5.0V|
|Company||Integrated Device Technology, Inc.|
|Datasheet||Download 7200 datasheet
The IDT7200/7201/7202 are dual-port memories that load and empty data on a first-in/first-out basis. The devices use Full and Empty flags to prevent data overflow and underflow and expansion logic to allow for unlimited expansion capability in both word size and depth. The reads and writes are internally sequential through the use of ring pointers, with no address information required to load and unload data. Data is toggled in and out of the devices through the use of the Write (W) and Read (R) pins. The devices utilize a 9-bit wide data array to allow for control and parity bits at the user's option. This feature is especially useful in data communications applications where it is necessary to use a parity bit for transmission/reception error checking. It also features a Retransmit (RT) capability that allows for reset of the read pointer to its initial position when RT is pulsed LOW to allow for retransmission from the beginning of data. A Half-Full Flag is available in the single device mode and width expansion modes. These FIFOs are fabricated using IDT's high-speed CMOS technology. They are designed for those applications requiring asynchronous and simultaneous read/writes in multiprocessing and rate buffer applications. Military grade product is manufactured in compliance with the latest revision of MIL-STD-883, Class B.
First-In/First-Out dual-port memory x 9 organization x 9 organization x 9 organization (IDT7202) Low power consumption Active: 440mW (max.) --Power-down: 28mW (max.) Ultra high speed--12ns access time Asynchronous and simultaneous read and write Fully expandable by both word depth and/or bit width Pin and functionally compatible with 720X family Status Flags: Empty, Half-Full, Full Auto-retransmit capability High-performance CEMOSTM technology Military product compliant to MIL-STD-883, Class B Standard Military Drawing 5962-89666, 5962-89863 and 5962-89536 are listed on this function Dual versions available in the TSSOP package. For more information, see IDT7280/7281/7282 data sheet x IDT7202 Industrial temperature range +85oC) is available (plastic packages only)DATA INPUTS (D0-D8) W WRITE CONTROL WRITE POINTER RAM ARRAY x 9
IDT and the IDT logo are registered trademarks of Integrated Device Technology, Inc.
2002 Integrated Device Technology, Inc. All rights reserved. Product specifications subject to change without notice.Package Type PLASTIC DIP(1) PLASTIC THIN DIP CERDIP(1) THIN CERDIP SOIC
RECOMMENDED DC OPERATING CONDITIONS ABSOLUTE MAXIMUM RATINGS
Symbol VTERM Rating Terminal Voltage with Respect to GND Storage Temperature DC Output Current Com'l & Ind'l to +7.0 Mil. to +7.0 Unit V Symbol VCC GND VIL(2) TA Parameter Supply Voltage Commercial/Industrial/Military Supply Voltage Input High Voltage Com'l/Ind'l Input High Voltage Military Input Low Voltage Commercial/Industrial/Military Operating Temperature Commercial Operating Temperature Industrial Operating Temperature Military Min. Typ. 5.0 0 Max. Unit 5.5 °C
NOTE: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
NOTES: 1. For RT/RS/XI input, VIH = 2.6V (commercial). For RT/RS/XI input, VIH = 2.8V (military). 2. 1.5V undershoots are allowed for 10ns once per cycle.
Parameter Input Leakage Current (Any Input) Output Leakage Current Output Logic "1" Voltage IOH = 2mA Output Logic "0" Voltage IOL = 8mA Active Power Supply Current Standby Current (R=W=RS=FL/RT=VIH)
NOTES: 1. Industrial temperature range product for the 15ns and 25 ns speed grades are available as a standard device. 2. Military speed grades of 50ns and 80ns are only available for the IDT7201LA. 3. Measurements with 0.4 VIN VCC. 4. R VIH, 0.4 VOUT VCC. 5. Tested with outputs open (IOUT 0). 6. Tested = 20 MHz. 7. Typical + 0.02*CL*fS (in mA) with VCC fS = WCLK frequency = RCLK frequency (in MHz, using TTL levels), data switching CL = capacitive load (in pF). 8. All Inputs = VCC 0.2V or GND + 0.2V.
Symbol CIN C OUT Parameter Input Capacitance Output Capacitance Condition VIN = 0V VOUT = 0V Max. 8 Unit pF
Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels Output Load GND 5ns 1.5V See Figure 1
|Related products with the same datasheet|
|Some Part number from the same manufacture Integrated Device Technology, Inc.|
|7201 256 X 9 Asyncfifo, 5.0V|
|7203 2K X 9 Asyncfifo, 5.0V|
|7210 16x16 Parallel Multiplier-accumulator|
|72103 2K X 9 Configurable Parallel-to-serial Fifo, 5.0V|
|72104 4K X 9 Configurable Parallel-to-serial Fifo, 5.0V|
|72105 256 X 16 Parallel-to-serial Fifo, 5.0V|
|72115 512 X 16 Parallel-to-serial Fifo, 5.0V|
|72125 1K X 16 Parallel-to-serial Fifo, 5.0V|
|72131 2K X 9 Parallel-to-serial Fifo, 5.0V|
|72132 2K X 9 Serial-to-parallel Fifo, 5.0V|
|72141 2K X 9 Parallel-to-serial Fifo, 5.0V|
|72142 4K X 9 Serial-to-parallel Fifo, 5.0V|
|7216 16 X 16 Parallel CMOS Multipliers|
|7217 16x16 Parallel Multiplier (32-Bit Output)|
|72200 256 X 8 Syncfifo, 5.0V|
|72201 256 X 9 Syncfifo, 5.0V|
|72205 256 X 18 Syncfifo, 5.0V|
|72210 256 X 8 Syncfifo, 5.0V|
|72211 256 X 9 Syncfifo, 5.0V|
|72215 512 X 18 Syncfifo, 5.0V|
|72220 256 X 8 Syncfifo, 5.0V|
IDT6167SA-25B : CMOS Static RAM 16k : 16kx1
IDT71V35781YSA183BGI : 128k X 36, 256k X 18 3.3v Synchronous SRAMs 3.3v I/o, Pipelined Outputs Burst Counter, Single Cycle Deselect
IDT72215LB-35 : CMOS Syncfifo(tm) 256 X 18, 512 X 18, 1,024 X 18, 2,048 X 18 And 4,096 X 18
IDT74FCT139CTPB : Fast Smos Dual 1-of-4 Decoder With Enable
IDT74FCT2652CT : Fast CMOS Octal Transceiver/ Registers ( 3-state )
IDT74FCT827ATPG : 10-Bit Buffer
ICS1894K-32LFT : Interface - Drivers, Receivers, Transceiver Integrated Circuit (ics) PHY Transceiver Cut Tape (CT) 3.14 V ~ 3.47 V; PHYCEIVER LOW PWR 3.3V 32QFN Specifications: Number of Drivers/Receivers: - ; Type: PHY Transceiver ; Voltage - Supply: 3.14 V ~ 3.47 V ; Package / Case: 32-VFQFN Exposed Pad ; Packaging: Cut Tape (CT) ; Protocol: MII, RMII ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant
IDT71V25761SA200BQ8 : ** New ** 3.3V 128K X 36 Synchronous Pipelined Burst SRAM With 2.5V I/o
IDT74FCT821TP : FCT SERIES, LOW SKEW CLOCK DRIVER, 5 TRUE OUTPUT(S), 5 INVERTED OUTPUT(S), CDIP20 Specifications: Device Type: Clock Driver ; Bus Interface: CMOS ; Package Type: CERDIP-20 ; Supply Voltage: 4.75 to 5.25 volts ; Skew: 700 ps ; Operating Temperature: 0.0 to 70 C (32 to 158 F) ; Features / Standards: RoHS, Lead-Free
7132SA55C : 2K X 8 DUAL-PORT SRAM, 55 ns, CDIP48 Specifications: Memory Category: SRAM Chip ; Density: 16 kbits ; Number of Words: 2 k ; Bits per Word: 8 bits ; Package Type: DIP, 0.620 X 2.430 INCH, 0.150 INCH HEIGHT, SIDE BRAZED, DIP-48 ; Pins: 48 ; Logic Family: CMOS ; Supply Voltage: 5V ; Access Time: 55 ns ; Operating Temperature: 0 to 70 C (
72V205L10TFG : 256 X 18 OTHER FIFO, 6.5 ns, PQFP64 Specifications: Memory Category: FIFO ; Density: 5 kbits ; Number of Words: 256 k ; Bits per Word: 18 bits ; Package Type: TQFP, PLASTIC, TQFP-64 ; Pins: 64 ; Logic Family: CMOS ; Supply Voltage: 3.3V ; Access Time: 6.5 ns ; Cycle Time: 10 ns ; Operating Temperature: 0 to 70 C (32 to 158 F)
844003AGT : 700 MHz, OTHER CLOCK GENERATOR, PDSO24 Specifications: Device Type: Clock Generator ; Package Type: Surface Mount, TSSOP, 4.40 X 7.80 MM, 0.92 MM HEIGHT, ROHS COMPLIANT, MO-153, TSSOP-24 ; Supply Voltage: 3.14 to 3.46 volts ; Frequency: 35 MHz ; Operating Temperature: 0.0 to 70 C (32 to 158 F) ; Features / Standards: RoHS, Lead-Free
BS616LV2012AC : Very Low Power/voltage CMOS SRAM 128k X 16 Bit. Very low operation voltage ~ 3.6V Very low power consumption : Vcc = 3.0V C-grade: 30mA (Max.) operating current I -grade: 35mA (Max.) operating current 0.15uA (Typ.) CMOS standby current High speed access time -70 70ns (Max.) at Vcc -10 100ns (Max.) at Vcc = 3.0VAutomatic power down when chip is deselected Three state outputs and TTL compatible Fully.
BS62LV2565 : SRAM. Wide Vcc operation voltage ~ 5.5V Very low power consumption : Vcc = 5.0V C-grade : 35mA (Max.) operating current I- grade : 40mA (Max.) operating current 0.4uA (Typ.) CMOS standby current High speed access time -55 55ns (Max.) -70 70ns (Max.) = 5.0V Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation.
HM-6617 : 2K X 8 CMOS Prom. The a 16,384 bit fuse link CMOS PROM a 2K word by 8-bit/word format with "Three-State" outputs. This PROM is available in the standard 0.600 inch wide 24 pin SBDIP, the 0.300 inch wide slimline SBDIP, and the JEDEC standard 32 pad CLCC. The HM-6617 utilizes a synchronous design technique. This includes on-chip address latches and a separate output enable.
HY64SD16162B : Pseudo SRAM. This document is a general product and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for use of circuits described. No patent licenses are implied. Revision 1.0 December. 2002 1 The 16Mbit 1T/1C SRAM featured by high-speed operation and super low power consumption. The HY64SD16162B adopts one transistor.
HYMD232G726BL8 : 256 MB. Hynix HYMD232G726B(L)8-M/K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules(DIMMs) which are organized as 32Mx72 high-speed memory arrays. Hynix HYMD232G726B(L)8-M/ K/H/L series consists of nine 32Mx8 DDR SDRAM in 400mil TSOPII packages a 184pin glass-epoxy substrate. Hynix HYMD232G726B(L)8-M/K/H/L series.
K6F8016U6A : = K6F8016U6A 512K X 16 Bit Super Low Power And Low Voltage Full CMOS Static RAM ;; Organization = 512Kx16 ;; Vcc(V) = 2.7~3.3 ;; Speed-tAA(ns) = 55,70 ;; Operating Temperature = i ;; Operating Current(mA) = 4 ;; Standby Current(uA) = 1 ;; Package = 48TBGA ;; Production Status = Eol ;; Comments = K6F8016U6B Recommended.
KMM372C883CS : Buffered DIMM. = KMM372C883CS Fast Page Mode:8Mx72 DRAM Dimm With Ecc Using 8Mx8,4K&8K Refresh,5V ;; Density(MB) = 64 ;; Organization = 8Mx72 ;; Mode = Fast Page ;; Refresh = 8K/64ms ;; Speed(ns) = 50,60 ;; #of Pin = 168 ;; Component Composition = (8Mx8)x9+Drive ICx2 ;; Production Status = Eol ;; Comments = Buffered.
LC3564BM-70 : SRAM. The LC3564BS, LC3564BM, and LC3564BT are × 8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current. These SRAMs provide three control signal inputs: an OE input for high-speed memory access, and two chip.
M1T2LT18FE32E : 1T-SRAM. Standard 1T-SRAM Macros.
M485L0914DT0 : = M485L0914DT0 8Mx72 200pin DDR Sdram Sodimm Based on 8Mx16 ;; Density(MB) = 64 ;; Organization = 8Mx72 ;; Bank/ Interface = 4B/SSTL2 ;; Refresh = 4K/64ms ;; Speed = A2,B0,B3 ;; #of Pin = 200 ;; Power = C,l ;; Component Composition = (8Mx16)x5 ;; Production Status = Mass Production ;; Comments = -.
M5M5256DRV-15VLL : 262144-bit (32768-word BY 8-bit) CMOS Static RAM. The is 262,144-bit CMOS static RAMs organized by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by current is small enough for battery back-up application. It is ideal for the memory systems which require.
MBM29LV160BE70 : Single 3V. 2M * 8, 1M * 16. The 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered a 48-pin TSOP (1), 48-pin CSOP and 48-ball FBGA packages. The device is designed to be programmed in-system with the standard system 3.0 V VCC supply. 12.0 V VPP and 5.0 V VCC are not required for write or erase operations.
MH16S72DAMD-6 : . Some contents are subject to change without notice. The 16777216 - word by 72-bit Synchronous DRAM module. This consists of eighteen industry standard 8Mx8 Synchronous DRAMs in TSOP and one industory standard EEPROM in TSSOP. The mounting of TSOP on a card edge Dual Inline package provides any application where high densities and large quantities of memory.
MSM66P56-XX : Internal Mask ROM Voice Synthesis Ic, Internal One-time-programmable OTP ROM Voice Synthesis Ic, External ROM Drive Voice Synthesis ic.
W27E02 : 256Kx8.
K7B323625M : 1Mx36 Bit Synchronous Burst SRAM The K7B323625M and K7B321825M are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System..
P3C1256L55P6C : 32K X 8 STANDARD SRAM, 55 ns, PDIP28. s: Memory Category: SRAM Chip ; Density: 262 kbits ; Number of Words: 32 k ; Bits per Word: 8 bits ; Package Type: DIP, 0.600 INCH, PLASTIC, DIP-28 ; Pins: 28 ; Logic Family: CMOS ; Supply Voltage: 3V ; Access Time: 55 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).
SST25VF032B-66-4C-S2AF : 4M X 8 FLASH 2.7V PROM, PDSO8. s: Memory Category: Flash, PROM ; Density: 33554 kbits ; Number of Words: 4000 k ; Bits per Word: 8 bits ; Package Type: SOIC, 5.20 X 8 MM, ROHS COMPLIANT, SOIC-8 ; Pins: 8 ; Logic Family: CMOS ; Supply Voltage: 3V ; Data Rate: 66 MHz ; Operating Temperature: 0 to 70 C (32 to 158 F).
W3EG72255S202AJD3 : 256M X 72 DDR DRAM MODULE, 0.8 ns, DMA184. s: Memory Category: DRAM Chip ; Density: 19327353 kbits ; Number of Words: 256000 k ; Bits per Word: 72 bits ; Package Type: DIMM-184 ; Pins: 184 ; Supply Voltage: 2.5V ; Access Time: 0.8000 ns ; Operating Temperature: 0 to 70 C (32 to 158 F).