Details, datasheet, quote on part number: 150EBU02
CategoryDiscrete => Diodes & Rectifiers => Fast Recovery Diodes
Description200V 150A Ultra-fast Discrete Diode in a Powirtab Package
CompanyInternational Rectifier Corp.
DatasheetDownload 150EBU02 datasheet
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Features, Applications

Features Ultrafast Recovery 175C Operating Junction Temperature Benefits Reduced RFI and EMI Higher Frequency Operation Reduced Snubbing Reduced Parts Count

Description/ Applications These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses.

VR IF(AV) IFSM IFRM ! TJ, TSTG Cathode to Anode Voltage Continuous Forward Current, = 116C Single Pulse Forward Current, = 25C Maximum Repetitive Forward Current Operating Junction and Storage Temperatures

VBR, Vr VF Breakdown Voltage, Blocking Voltage Forward Voltage
= VR Rated = VR Rated = 200V Measured lead to lead 5mm from package body
Dynamic Recovery Characteristics = 25C (unless otherwise specified)

RthJC RthCS # Wt Thermal Resistance, Junction to Case Thermal Resistance, Case to Heatsink Weight 0.18 T Mounting Torque 1.2 10

Reverse Voltage - VR (V) Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage
Forward Voltage Drop - VFM (V) Fig. 1 - Typical Forward Voltage Drop Characteristics
Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics


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