Details, datasheet, quote on part number: OM6216SS
PartOM6216SS
Category
Description100V Dual N-channel MOSFET in a S-6 Package
CompanyInternational Rectifier Corp.
DatasheetDownload OM6216SS datasheet
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Features, Applications

100V Thru 500V, Dual High Current, N-Channel MOSFETs
FEATURES

Two Isolated MOSFETs In A Hermetic Metal Package Fast Switching, Low Drive Current Ease of Paralleling For Added Power Low RDS(on) Available Screened To MIL-S-19500, TX, TXV And S Levels

DESCRIPTION

This series of hermetically packaged products feature the latest advanced MOSFET and packaging technology. They are ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.

Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSSF IDSS Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State Resistance1.09 0.11 VGS 125 C.055.065 VGS A V Min. Typ. Max. Units Test Conditions 100 V VGS 250 mA VDS = VGS, 250 mA VGS 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS 125 C VDS 2 VDS(on), VGS 10 V VGS 20 A

Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSSF IDSS Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State 0.14 0.17 VGS 125 C.085.095 VGS A V Min. Typ. Max. Units Test Conditions 200 V VGS 250 mA VDS = VGS, 250 m VGS 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS 125 C VDS 2 VDS(on), VGS 10 V VGS 16 A VDS(on) Static Drain-Source On-State

Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time

IS ISM VSD trr Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 30 A

Modified MOSPOWER symbol showing the integral P-N Junction rectifier.
1 Pulse Test: Pulse Width 300msec, Duty Cycle 2%.
(MOSFET) switching times are essentially independent of operating temperature.

Forward Transductance1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time

Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 350

Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSSF IDSS Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State 0.50 0.60 VGS 0.25 0.3 VGS A V Min. Typ. Max. Units Test Conditions 400 V VGS 250 mA VDS = VGS, 250 mA VGS 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS 125 C VDS 2 VDS(on), VGS 10 V VGS 8 A

Parameter BVDSS Drain-Source Breakdown Voltage VGS(th) IGSSF IDSS Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current ID(on) On-State Drain Current1 Voltage1 RDS(on) Static Drain-Source On-State Resistance1 RDS(on) Static Drain-Source On-State 0.66 0.88 VGS 0.3 0.4 VGS A V Min. Typ. Max. Units Test Conditions 500 V VGS 250 mA VDS = VGS, 250 mA VGS 20 V VDS = Max. Rat., VGS = 0 VDS = 0.8 Max. Rat., VGS 125 C VDS 2 VDS(on), VGS 10 V VGS 7 A VDS(on) Static Drain-Source On-State

IS ISM VSD trr Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 15 A

Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage1 Reverse Recovery Time 400


 

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