Details, datasheet, quote on part number: OM6502ST
PartOM6502ST
CategoryDiscrete
Description600V Discrete Hi-rel Igbt in a D2 Package
CompanyInternational Rectifier Corp.
DatasheetDownload OM6502ST datasheet
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Features, Applications

INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-257AA PACKAGE
500 Volt, 5 And 10 Amp, N-Channel IGBT In A Hermetic Metal Package
FEATURES

Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability Fast Turn-Off Low Conductive Losses Available Screened to MIL-S-19500, TX, TXV And S Levels

DESCRIPTION

The IGBT power transistor features a high impedance insulated gate and a low on-resistance characteristic of bipolar transistors. These devices are ideally suited for motor drives, UPS converters, power supplies and resonant power converters.

PART NUMBER OM6502ST IC (Cont.) 5 10 V(BR)CES V 500 VCE (sat) (Typ.) 2.8 Tf (Typ.) ns 400 qJC C/W C 150

Note: IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.

IGBT CHARACTERISTICS Min. Typ. Max. Units Test Conditions mA nA VCE 250 A VCE = Max. Rat., VGE = 0 VCE = 0.8 Max. Rat., VGE = 125C IGES Gate Emitter Leakage Current Parameter - ON VGE(th) Gate Threshold Voltage Saturation Voltage VCE(sat) Collector Emitter Saturation Voltage Dynamic gfs Cies Coes Cres Td(on) tr tr(Volt) tf tcross Eoff Forward Transductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Rise Time Off Voltage Rise Time Fall Time Cross-Over Time Turn-Off Losses S mJ VCE 5 A VGE = 0 VCE = 25 mHz VCC 5 A VGE = 47 VCEclamp 5 A VGE = 0.1 mH, 4.0 V VCE = VGE, 250 A VGE = 25C VGE = 100C gfs Cies Coes Cres Td(on) tr Td(off) tf Td(off) tf tcross Eoff VCE(sat) Collector Emitter VGE 20 V VCE 0 V VGE(th) IGES Gate Emitter Leakage Current Parameter - ON Gate Threshold Voltage Saturation Voltage VCE(sat) Collector Emitter Saturation Voltage Dynamic Forward Transductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Delay Time Fall Time Cross-Over Time Turn-Off Losses S mJ VCEclamp 10 A VGE = 180 H, = 100C VCC 10 A VGE = 100 VCE 10 A VGE = 0 VCE = 25 mHz 4.0 V VCE = VGE, 250 A VGE = 25C VGE = 100C VCE(sat) Collector Emitter 100 nA ICES Parameter - OFF V(BR)CES Collector Emitter Breakdown Voltage Zero Gate Voltage Drain Current 1.0 mA Min. Typ. Max. Units Test Conditions 500 V VCE 250 A VCE = Max. Rat., VGE = 0 VCE = 0.8 Max. Rat., VGE = 125C VGE 20 V VCE 0 V

IGBT CHARACTERISTICS Parameter - OFF V(BR)CES Collector Emitter Breakdown Voltage ICES Zero Gate Voltage Drain Current


 

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