Details, datasheet, quote on part number: OM6506SA
PartOM6506SA
CategoryDiscrete
Description600V Discrete Hi-rel Igbt in a TO-254AA Package
CompanyInternational Rectifier Corp.
DatasheetDownload OM6506SA datasheet
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Features, Applications

INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-254AA PACKAGE
500 Volt, 15 And 20 Amp, N-Channel IGBT In A Hermetic Metal Package
FEATURES

Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability Fast Turn-Off Available Screened To MIL-S-19500, TX, TXV And S Levels Low Conductive Losses Ceramic Feedthroughs Available

DESCRIPTION

The IGBT power transistor features a high impedance insulated gate and a low on-resistance characteristic of bipolar transistors. These devices are ideally suited for motor drives, UPS converters, power supplies and resonant power converters.

PART NUMBER OM6506SA IC (Cont.) 15 20 V(BR)CES V 500 VCE (sat) (Typ.) 2.8 Tf (Typ.) ns 400 qJC C/W C 150

Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter "C" to the part number. Example - OMXXXXCSA. IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.

IGBT CHARACTERISTICS Min. Typ. Max. Units Test Conditions mA nA VCE 250 A VCE = Max. Rat., VGE = 0 VCE = 0.8 Max. Rat., VGE = 125C IGES Gate Emitter Leakage Current Parameter - ON VGE(th) Gate Threshold Voltage Saturation Voltage VCE(sat) Collector Emitter Saturation Voltage Dynamic gfs Cies Coes Cres Td(on) tr tr(Volt) tf tcross Eoff Forward Transductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Rise Time Off Voltage Rise Time Fall Time Cross-Over Time Turn-Off Losses S mJ VCE 15 A VGE = 0 VCE = 25 mHz VCC 15 A VGE = 47 VCEclamp 15 A VGE = 0.1 mH, 4.0 V VCE = VGE, 250 A VGE = 25C VGE = 100C gfs Cies Coes Cres Td(on) tr Td(off) tf Td(off) tr VCE(sat) Collector Emitter VGE 20 V VCE 0 V VGE(th) IGES Gate Emitter Leakage Current Parameter - ON Gate Threshold Voltage Saturation Voltage VCE(sat) Collector Emitter Saturation Voltage Dynamic Forward Transductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Delay Time Current Fall Time nS S VCEclamp 20 A VGE = 0.1 mH, = 125C VCE 20 A VGE = 0 VCE = 25 mHz VCC 20 A VGE 4.0 V VCE = VGE, 250 A VGE = 25C VGE = 100C VCE(sat) Collector Emitter 100 nA ICES Parameter - OFF V(BR)CES Collector Emitter Breakdown Voltage Zero Gate Voltage Drain Current 1.0 mA Min. Typ. Max. Units Test Conditions 500 V VCE 250 A VCE = Max. Rat., VGE = 0 VCE = 0.8 Max. Rat., VGE = 100C VGE 20 V VCE 0 V

IGBT CHARACTERISTICS Parameter - OFF V(BR)CES Collector Emitter
Breakdown Voltage ICES Zero Gate Voltage Drain Current

 

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