Details, datasheet, quote on part number: OM6509SA
PartOM6509SA
CategoryDiscrete
Description600V Copack Hi-rel Igbt in a TO-254AA Package
CompanyInternational Rectifier Corp.
DatasheetDownload OM6509SA datasheet
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Features, Applications

INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-254AA PACKAGE
500 Volt, 5 And 10 Amp, N-Channel IGBT With a Soft Recovery Diode In A Hermetic Metal Package
FEATURES

Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability Fast Turn-Off Low Conductive Losses Available Screened To MIL-S-19500, TX, TXV And S Levels Free Wheeling Diode Ceramic Feedthroughs Available

DESCRIPTION

This power module includes an IGBT power transistor which features a high impedance insulated gate and the low on-resistance characteristics of bipolar transistor with a free wheeling diode connected across the emitter and collector. These devices are ideally suited for motor drives, UPS converters, power supplies and resonant power converters.

PART NUMBER OM6509SA IC (Cont.) 5 10 V(BR)CES V 500 VCE (sat) (Typ.) 2.8 Tf (Typ.) ns 400 qJC C/W C 150

Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter "C" to the part number. Example - OMXXXXCSA. IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.

IGBT CHARACTERISTICS Min. Typ. Max. Units Test Conditions mA nA VCE 250 A VCE = Max. Rat., VGE = 0 VCE = 0.8 Max. Rat., VGE = 125C IGES Gate Emitter Leakage Current Parameter - ON VGE(th) Gate Threshold Voltage Saturation Voltage VCE(sat) Collector Emitter Saturation Voltage Dynamic gfs Cies Coes Cres Td(on) tr tr(Volt) tf tcross Eoff Vf Ir trr Forward Transductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Rise Time Off Voltage Rise Time Fall Time Cross-Over Time Turn-Off Losses Maximum Forward Voltage Maximum Reverse Current Reverse Recovery Time -15 A /S = 25C trr Note 1: Limited by diode Ir characteristic. Reverse Recovery Time Ir Maximum Reverse Current VCE 5 A VGE = 0 VCE = 25 mHz VCC 5 A VGE = 47 VCEclamp 5 A VGE = 0.1 mH, 4.0 V VCE = VGE, 250 A VGE = 25C VGE = 100C gfs Cies Coes Cres Td(on) Tr Td(off) Tf Td(off) tf tcross Eoff Vf VCE(sat) Collector Emitter VGE 20 V VCE 0 V VGE(th) IGES Gate Emitter Leakage Current Parameter - ON Gate Threshold Voltage Saturation Voltage VCE(sat) Collector Emitter Saturation Voltage Dynamic Forward Transductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Delay Time Fall Time Cross-Over Time Turn-Off Losses Maximum Forward Voltage -15 A /S = 25C Note 1: Limited by diode Ir characteristic. VCEclamp 10 A VGE = 180 H, = 100C VCC 10 A VGE = 100 VCE 10 A VGE = 0 VCE = 25 mHz 3.0 V VCE = VGE, 250 A VGE = 25C VGE = 100C VCE(sat) Collector Emitter 100 nA ICES Parameter - OFF (see Note 1) V(BR)CES Collector Emitter Breakdown Voltage Zero Gate Voltage Drain Current 1.0 mA Min. Typ. Max. Units Test Conditions 500 V VCE 250 A VCE = Max. Rat., VGE = 0 VCE = 0.8 Max. Rat., VGE = 125C VGE 20 V VCE 0 V

IGBT CHARACTERISTICS Parameter - OFF (see Note 1) V(BR)CES Collector Emitter Breakdown Voltage ICES Zero Gate Voltage Drain Current


 

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