Details, datasheet, quote on part number: OM6526SA
PartOM6526SA
CategoryDiscrete
Description1200V Discrete Hi-rel Igbt in a TO-254AA Package
CompanyInternational Rectifier Corp.
DatasheetDownload OM6526SA datasheet
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Features, Applications

INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-254AA PACKAGE
1000 Volt, 15 And 20 Amp, N-Channel IGBT In A Hermetic Metal Package
FEATURES

Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage High Current Capability High Switching Speed Low Tail Current Available Screened To MIL-S-19500, TX, TXV and S Levels Ceramic Feedthroughs Available

DESCRIPTION

This IGBT power transistor features the high switching speeds of a power MOSFET and the low on-resistance of a bipolar transistor. It is ideally suited for high power switching applications such as frequency converters for 3 motors, UPS and high power SMPS.

PART NUMBER OM6526SA IC (Cont.) 20 15 V(BR)CES V 1000 VCE (sat) (Typ.) 4.0 Tf (Typ.) ns 300 qJC C/W C 150

Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter "C" to the part number. Example - OMXXXXCSA. IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.

IGBT CHARACTERISTICS Parameter - OFF V(BR)CES Collector Emitter Breakdown Voltage ICES Zero Gate Voltage Drain Current mA nA Min. Typ. Max. Units Test Conditions 1000 V VCE 250 A VCE = Max. Rat., VGE = 0 VCE = 0.8 Max. Rat., VGE = 125C IGES Gate Emitter Leakage Current Parameter - ON VGE(th) Gate Threshold Voltage Saturation Voltage VCE(sat) Collector Emitter Saturation Voltage Dynamic gfs Cies Coes Cres Td(on) tr Td(off) tf Td(off) tf Eoff Forward Transductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Delay Time Fall Time Turn-Off Losses pF nS VCEclamp 15 A VGE = 3.3 VCE 15 A VGE = 0 VCE = 25 mHz VCC 15 A VGE 6.5 V VCE = VGE, 1 mA VGE = 25C VGE = 125C VCE(sat) Collector Emitter VGE 20 V VCE 0 V

IGBT CHARACTERISTICS Parameter - OFF V(BR)CES Collector Emitter Breakdown Voltage ICES Zero Gate Voltage Drain Current IGES Gate Emitter Leakage Current Parameter - ON VGE(th) Gate Threshold Voltage Saturation Voltage VCE(sat) Collector Emitter Saturation Voltage Dynamic gfs Cies Coes Cres Td(on) tr Td(off) tf Td(off) tf Eoff Forward Transductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Delay Time Fall Time Turn-Off Losses pF nS VCEclamp 10 A VGE = 3.3 VCE 10 A VGE = 0 VCE = 25 mHz VCC 10 A VGE 6.5 V VCE = VGE, 700 A VGE = 25C VGE = 125C VCE(sat) Collector Emitter A nA Min. Typ. Max. Units Test Conditions 1000 V VCE 150 A VCE = Max. Rat., VGE = 0 VCE = 0.8 Max. Rat., VGE = 125C VGE 20 V VCE 0 V


 

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