Details, datasheet, quote on part number: 45N100
CategoryDiscrete => IGBTs (Insulated Gate Bipolar Transistors) => Medium Voltage 600-1199 Volts
TitleMedium Voltage 600-1199 Volts
DescriptionLow Vce(sat) Igbt Short Circuit Soa Capability
CompanyIXYS Corporation
DatasheetDownload 45N100 datasheet
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Features, Applications


Test Conditions to 150C; RGE 1 MW Continuous Transient 1 ms VGE 2.7 W Clamped inductive load, 30 mH VGE 15 V, VCE = 0.6 VCES, 22 W, non repetitive = 25C

Maximum lead temperature for soldering mm (0.062 in.) from case for 10 s
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. nA V

Features International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity

Applications AC motor speed control Uninterruptible power supplies (UPS) Welding
Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power density
IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. VCE 25 V, VGE = 1 MHz = IC90, VGE 15 V, VCE = 0.5 VCES Inductive load, = IC90, VGE 100 mH VCE = 0.8 VCES, 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG Inductive load, = IC90, VGE 100 mH VCE = 0.8 VCES, 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased mJ 0.42 K/W 0.25 K/W

gfs IC(on) C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:


Some Part number from the same manufacture IXYS Corporation
45N120 High Voltage, Low Vce(sat) Igbt
48N50 N-channel Enhancement Mode Avalanche Rated, High Dv/dt, Low Trr: 500v, 48a
50N120AU1 High Voltage Igbt With Diode i Short Circuit Soa Capability
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50N50BU1 Hiperfast(tm) Igbt With Diode
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