Details, datasheet, quote on part number: MCD162-18IO1
| Part | MCD162-18IO1 |
| Category | Discrete => Thyristors => Modules |
| Title | Phase-leg Configuration |
| Description | 800V Thyristor Modules Thyristor/diode Module |
| Company | IXYS Corporation |
| Datasheet | Download MCD162-18IO1 datasheet
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| Quote |
| Features, Applications |
Symbol ITRMS, IFRMS ITAVM, IFAVM ITSM, IFSM Test Conditions TVJ = TVJM 80°C; 180° sine 85°C; 180° sine TVJ = 0 TVJ = TVJM ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine TVJ = TVJM repetitive, f =50 Hz, = 2/3 VDRM 0.5 A non repetitive, 500 A diG/dt = 0.5 A/ms TVJ = TVJM; VDR = 2/3 VDRM RGK = method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM 500 ms Features International standard package Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage V~ UL registered, E 72873 Keyed gate/cathode twin pins (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md WeightApplications Motor control Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Contactless switches Mounting torque (M6) Terminal connection torque (M6) Typical including screwsAdvantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions Symbol IRRM, IDRM VT, VT0 rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dA a Test Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT, 300 A; TVJ = 25°C For power-loss calculations only (TVJ 6 V; TVJ = TVJM; TVJ = 25°C TVJ = -40°C TVJ = 25°C TVJ = 2/3 VDRM Characteristic Values mC A K/W mm m/s2 Fig. 1 Gate trigger characteristics TVJ = 30 ms; 0.5 A; diG/dt = 0.5 A/ms TVJ 6 V; RGK = ¥ TVJ = 1/2 VDRM 0.5 A; diG/dt = 0.5 A/ms TVJ = TVJM; = 200 ms; -di/dt = 10 A/ms typ. 100 V; dv/dt = 20 V/ms; = 2/3 VDRM TVJ = TVJM; IT, 300 A, -di/dt = 50 A/ms per thyristor/diode; DC current module thyristor/diode; DC current module Creepage distance on surface Strike distance through air Maximum allowable accelerationOptional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type (L = Left for pin pair UL 758, style 1385, Type (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 Fig. 2 Gate trigger delay time Dimensions = 0.0394") MCC Version 1 MCD Version 1Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature |
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DSEI2X30-10R : IXFK32N50Q : HiperFET (tm) Power MOSFETs Q-class: 500v, 32a PDM41256SA-12I : Paradigm SRAM PDM41257SA15SAOTR : 256k Static RAM 256kx1-bit CS800-14IO1 : Phase Control Thyristor IXTH10N100 : 10 AMP, 600v, 0.55-ohm / 0.7-ohm MMO74-12IO6 : AC Controller Modules IXGH36N60B3D4 : Igbt - Single Discrete Semiconductor Product 36A 600V 250W Standard; IGBT 600V TO-247 Specifications: Input Type: Standard ; Voltage - Collector Emitter Breakdown (Max): 600V ; Current - Collector (Ic) (Max): 36A ; Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A ; Power - Max: 250W ; Mounting Type: Through Hole ; Package / Case: TO-247-3 ; Packaging: Tube ; Lead Free Status: Lead Free ; RoH IXDE514PI : Pmic - Mosfet, Bridge Driver - External Switch Integrated Circuit (ics) Inverting Tube 14A 4.5 V ~ 30 V; IC GATE DRIVER 14A 8-DIP Specifications: Configuration: Low-Side ; Voltage - Supply: 4.5 V ~ 30 V ; Current - Peak: 14A ; Delay Time: 20ns ; Package / Case: 8-DIP (0.300", 7.62mm) ; Packaging: Tube ; Number of Outputs: 1 ; Input Type: Inverting ; Number of Configurations: 1 ; Operating Temperature: -55°C ~ 125°C ; High Side IXGD25N120A-5T : 1000 V, N-CHANNEL IGBT Specifications: Polarity: N-Channel ; Package Type: DIE-5 ; Number of units in IC: 1 PDM31256SA12SOATY : 32K X 8 STANDARD SRAM, 10 ns, PDSO28 Specifications: Memory Category: SRAM Chip ; Density: 262 kbits ; Number of Words: 32 k ; Bits per Word: 8 bits ; Package Type: SOJ, 0.300 INCH, PLASTIC, SOJ-28 ; Pins: 28 ; Logic Family: CMOS ; Supply Voltage: 3.3V ; Access Time: 10 ns ; Operating Temperature: 0 to 70 C (32 to 158 F) |