Details, datasheet, quote on part number: MCD220-16IO1
PartMCD220-16IO1
CategoryDiscrete => Thyristors => Modules
TitlePhase-leg Configuration
Description
CompanyIXYS Corporation
DatasheetDownload MCD220-16IO1 datasheet
Quote
Find where to buy
 
  

 

Features, Applications

Symbol ITRMS, IFRMS ITAVM, IFAVM ITSM, IFSM

Test Conditions TVJ = TVJM 85C; 180 sine TVJ = 0 TVJ = TVJM ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine

TVJ = TVJM repetitive, f =50 Hz, = 2/3 VDRM 1 A non repetitive, 250 A diG/dt = 1 A/ms TVJ = TVJM; VDR = 2/3 VDRM RGK = method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM 500 ms

Features International standard package Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage V~ UL registered, E 72873 Keyed gate/cathode twin pins

(dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight

Applications Motor control Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Contactless switches

Mounting torque (M5) Terminal connection torque (M8) Typical including screws

Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits

Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions

Symbol IRRM IDRM VT, VT0 rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dA a Test Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT, 600 A; TVJ = 25C For power-loss calculations only (TVJ 6 V; TVJ = TVJM; TVJ = 25C TVJ = -40C TVJ = 25C TVJ = 2/3 VDRM Characteristic Values mC A K/W mm m/s2 Fig. 1 Gate trigger characteristics

TVJ = 30 ms; 0.45 A; diG/dt = 0.45 A/ms TVJ 6 V; RGK = TVJ = 1/2 VDRM 1 A; diG/dt = 1 A/ms TVJ = TVJM; = 200 ms; -di/dt = 10 A/ms typ. 100 V; dv/dt = 50 V/ms; = 2/3 VDRM TVJ = 125C; IT, 400 A, -di/dt = 50 A/ms per thyristor/diode; DC current module thyristor/diode; DC current module

Creepage distance on surface Strike distance through air Maximum allowable acceleration

Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type (L = Left for pin pair UL 758, style 1385, Type (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1

Fig. 2 Gate trigger delay time Dimensions = 0.0394") MCC MCD Threaded spacer for higher Anode/ Cathode construction: Type ZY 250, material brass

Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration

Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode)

Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature


 

Related products with the same datasheet
MCC220-12IO1
MCC220-14IO2
MCC220-16IO1
MCD220-08IO1
MCD220-12IO1
MCD220-14IO1
Some Part number from the same manufacture IXYS Corporation
MCD225-12IO1
MCD250-08IO1
MCD250-XXFamily Thyristor Module Thyristor/diode Module
MCD255-14IO1
MCD255-XXFamily Thyristor Module Thyristor/diode Module
MCD26-12IO8B
MCD26-XXFamily Thyristor Module Thyristor/diode Module
MCD310-08IO1 800V Thyristor Modules Thyristor/diode Module
MCD310-XXFamily Thyristor Module Thyristor/diode Module
MCD312-12IO1
MCD312-XXFamily Thyristor Module Thyristor/diode Module
MCD40 Thyristor/diode Module
MCD40-16IO6
MCD44-12IO8B
MCD44-XXFamily Thyristor Module Thyristor/diode Module
MCD56-12IO1B
MCD56-XXFamily Thyristor Module Thyristor/diode Module
MCD72-12IO1B
MCD72-XXFamily Thyristor Module Thyristor/diode Module
MCD94-20IO1B High Voltage Thyristor Module
MCD95-12IO1B

MDD95-12N1B : Dual Diode Modules

PDM41027 : 1 MB Static RAM 1mx1-bit

VVZ12-14IO1 : Three-phase Half Controlled V Rectifier Bridge

IXTQ44N50P : Polar N-channel MOSFETs International standard packages 􀁺 Unclamped Inductive Switching (UIS) rated 􀁺 Low package inductance - easy to drive and to protect

EVDN430CI : Eval And Demo Board And Kit Programmers, Development System; BOARD EVALUATION IXDN430CI Specifications: Main Purpose: Power Management, FET Driver (External FET) ; Primary Attributes: - ; Secondary Attributes: - ; Supplied Contents: Board ; Utilized IC / Part: IXDN430CI ; Embedded: - ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

IXGR50N160H1 : Igbt - Single Discrete Semiconductor Product 75A 1600V 240W Standard; IGBT 1600V 75A W/DIO ISOPLUS247 Specifications: Input Type: Standard ; Voltage - Collector Emitter Breakdown (Max): 1600V ; Current - Collector (Ic) (Max): 75A ; Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A ; Power - Max: 240W ; Mounting Type: Through Hole ; Package / Case: ISOPLUS247 ; Packaging: Tube ; Lead Free Status: Lead Free ;

IXGK64N60B3D1 : Igbt - Single Discrete Semiconductor Product 64A 600V 460W Standard; IGBT 600V 400A GENX3 TO-264 Specifications: Input Type: Standard ; Voltage - Collector Emitter Breakdown (Max): 600V ; Current - Collector (Ic) (Max): 64A ; Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A ; Power - Max: 460W ; Mounting Type: Through Hole ; Package / Case: TO-264-3, TO-264AA ; Packaging: Tube ; Lead Free Status: Lead

IXTH48N20 : Fet - Single Discrete Semiconductor Product 48A 200V 275W Through Hole; MOSFET N-CH 200V 48A TO-247 Specifications: Mounting Type: Through Hole ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 200V ; Current - Continuous Drain (Id) @ 25 C: 48A ; Rds On (Max) @ Id, Vgs: 50 mOhm @ 15A, 10V ; Input Capacitance (Ciss) @ Vds: 3000pF @ 25V ; Power - Max: 275W ; Packaging: Tub

IXTK90P20P : Fet - Single Discrete Semiconductor Product 90A 200V 890W Through Hole; MOSFET P-CH 200V 90A TO-264 Specifications: Mounting Type: Through Hole ; FET Type: MOSFET P-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 200V ; Current - Continuous Drain (Id) @ 25 C: 90A ; Rds On (Max) @ Id, Vgs: 44 mOhm @ 500mA, 10V ; Input Capacitance (Ciss) @ Vds: 12000pF @ 25V ; Power - Max: 890W ; Packaging:

IXGP15N100B : 28 A, 1200 V, N-CHANNEL IGBT, TO-220AB Specifications: Polarity: N-Channel ; Package Type: TO-220, TO-220AB, 3 PIN ; Number of units in IC: 1

IXGT15N120B2D1 : 30 A, 1200 V, N-CHANNEL IGBT, TO-268AA Specifications: Polarity: N-Channel ; Package Type: TO-268, 3 PIN ; Number of units in IC: 1

PDM31256SA15T : 32K X 8 STANDARD SRAM, 10 ns, PDSO28 Specifications: Memory Category: SRAM Chip ; Density: 262 kbits ; Number of Words: 32 k ; Bits per Word: 8 bits ; Package Type: SOJ, 0.300 INCH, PLASTIC, SOJ-28 ; Pins: 28 ; Logic Family: CMOS ; Supply Voltage: 3.3V ; Access Time: 10 ns ; Operating Temperature: 0 to 70 C (32 to 158 F)

 
0-C     D-L     M-R     S-Z