Details, datasheet, quote on part number: MCD44-18IO8B
PartMCD44-18IO8B
CategoryDiscrete => Thyristors => Modules
TitlePhase-leg Configuration
Description
CompanyIXYS Corporation
DatasheetDownload MCD44-18IO8B datasheet
Quote
Find where to buy
 
  

 

Features, Applications

Symbol ITRMS, IFRMS ITAVM, IFAVM ITSM, IFSM

Test Conditions TVJ = TVJM 83C; 180 sine 85C; 180 sine TVJ = 0 TVJ = TVJM ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine

TVJ = TVJM repetitive, f =50 Hz, = 2/3 VDRM 0.45 A non repetitive, IT = ITAVM diG/dt = 0.45 A/ms TVJ = TVJM; VDR = 2/3 VDRM RGK = method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM 300 ms

Features
(dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight

International standard package, JEDEC TO-240 AA Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage V~ UL registered, E 72873 Gate-cathode twin pins for version 1B

Applications
DC motor control Softstart AC motor controller Light, heat and temperature control
Mounting torque (M5) Terminal connection torque (M5) Typical including screws

Space and weight savings Simple mounting with two screws Improved temperature and power cycling Reduced protection circuits

Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions

Symbol IRRM, IDRM VT, VT0 rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dA a Test Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT, 200 A; TVJ = 25C For power-loss calculations only (TVJ 6 V; TVJ = TVJM; TVJ = 25C TVJ = -40C TVJ = 25C TVJ = 2/3 VDRM Characteristic Values V mA

TVJ = 10 ms, 0.45 A; diG/dt = 0.45 A/ms TVJ 6 V; RGK = TVJ = 1/2 VDRM 0.45 A; diG/dt = 0.45 A/ms TVJ = TVJM; = 200 ms; -di/dt = 10 A/ms typ. 100 V; dv/dt = 20 V/ms; = 2/3 VDRM TVJ = TVJM; IT, 50 A, -di/dt = 0.64 A/ms per thyristor/diode; DC current module thyristor/diode; DC current module

Creepage distance on surface Strike distance through air Maximum allowable acceleration

Optional accessories for module-type MCC 44 version 1 B Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type (L = Left for pin pair UL 758, style 1385, Type (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1

Fig. 2 Gate trigger delay time Dimensions = 0.0394") MCC Version 1 B MCC Version 8 B MCD Version 8 B

Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration

Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode)

Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature


 

Related products with the same datasheet
MCC44-12IO1B
MCC44-12IO8B
MCC44-14IO1B
MCC44-14IO8B
MCC44-16IO1B
MCC44-16IO8B
MCC44-18IO1B
MCC44-18IO8B
MCD44-12IO8B
MCD44-14IO8B
MCD44-16IO8B
Some Part number from the same manufacture IXYS Corporation
MCD44-XXFamily Thyristor Module Thyristor/diode Module
MCD56-12IO1B
MCD56-XXFamily Thyristor Module Thyristor/diode Module
MCD72-12IO1B
MCD72-XXFamily Thyristor Module Thyristor/diode Module
MCD94-20IO1B High Voltage Thyristor Module
MCD95-12IO1B
MCD95-XXFamily Thyristor Module Thyristor/diode Module
MCO150-12IO1
MCO450-20IO1 2000V High Power Single Thyristor Module
MCO500-12IO1 1200V High Power Thyristor Module
MCO600 High Power Single Thyristor Module
MCO600-20IO1 2000V High Power Single Thyristor Module
MDA72-08N1B
MDD142-08N1 800V High Power Diode Module
MDD172-08N1
MDD220-08N1 High Power Diode Module
MDD250-08N1
MDD255-12N1
MDD26-08N1B Diode Module
MDD310-08N1 800V High Power Diode Module

PDM41028SA12SOITR : 1 MB Static RAM 256kx4-bit

IXTA3N60P : Polar N-channel MOSFETs International standard packages 􀁺 Unclamped Inductive Switching (UIS) rated 􀁺 Low package inductance - easy to drive and to protect

IXFV26N50P : Polar MOSFETs with Fast Intrinsic Diode # BVDSS up to 600V # Avalanche rated # Fast trr intrinsic diode # ID(25): 1A - 200A

IXGH32N50BU1S : Hiperfast IGBT Lightspeed Series

VUO50 : Three Phase Rectifier Bridge

IXTV02N250S : MOSFET N-Chan Pwr Mosfet 2500V 200mA Specifications: Manufacturer: IXYS ; RoHS:  Details ; Transistor Polarity: N-Channel ; Drain-Source Breakdown Voltage: 2500 V ; Gate-Source Breakdown Voltage: 20 V ; Continuous Drain Current: 200 mA ; Resistance Drain-Source RDS (on): 450 mOhms ; Maximum Operating Temperature: + 150 C ; Mountin

IXTP100N04T2 : Fet - Single Discrete Semiconductor Product 100A 40V 150W Through Hole; MOSFET N-CH 40V 100A TO-220 Specifications: Mounting Type: Through Hole ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 40V ; Current - Continuous Drain (Id) @ 25 C: 100A ; Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V ; Input Capacitance (Ciss) @ Vds: 2690pF @ 25V ; Power - Max: 150W ; Packaging: Tube

IXFT30N50Q : Fet - Single Discrete Semiconductor Product 30A 500V 360W Surface Mount; MOSFET N-CH 500V 30A TO-268 Specifications: Mounting Type: Surface Mount ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 500V ; Current - Continuous Drain (Id) @ 25 C: 30A ; Rds On (Max) @ Id, Vgs: 160 mOhm @ 500mA, 10V ; Input Capacitance (Ciss) @ Vds: 4925pF @ 25V ; Power - Max: 360W ; Packaging:

IXTC200N075T : Fet - Single Discrete Semiconductor Product 110A 75V 150W Through Hole; MOSFET N-CH 75V 110A ISOPLUS220 Specifications: Mounting Type: Through Hole ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 75V ; Current - Continuous Drain (Id) @ 25 C: 110A ; Rds On (Max) @ Id, Vgs: - ; Input Capacitance (Ciss) @ Vds: - ; Power - Max: 150W ; Packaging: Tube ; Gate Charge (Qg) @ Vgs:

MCC225-16IO1 : 400 A, 2400 V, SCR Specifications: VDRM: 2400 volts ; VRRM: 2400 volts ; IT(RMS): 400 amps ; IGT: 220 mA ; Standards and Certifications: RoHS ; Package Type: MODULE-7 ; Pin Count: 7

PDM31034SA15SOITR : 128K X 8 STANDARD SRAM, 10 ns, PDSO32 Specifications: Memory Category: SRAM Chip ; Density: 1049 kbits ; Number of Words: 128 k ; Bits per Word: 8 bits ; Package Type: SOJ, 0.400 INCH, PLASTIC, SOJ-32 ; Pins: 32 ; Logic Family: CMOS ; Supply Voltage: 3.3V ; Access Time: 10 ns ; Operating Temperature: 0 to 70 C (32 to 158 F)

 
0-C     D-L     M-R     S-Z