Details, datasheet, quote on part number: MCD56-XXFamily
PartMCD56-XXFamily
CategoryDiscrete => Thyristors => Modules
DescriptionThyristor Module Thyristor/diode Module
CompanyIXYS Corporation
DatasheetDownload MCD56-XXFamily datasheet
  

 

Features, Applications

Symbol ITRMS, IFRMS ITAVM, IFAVM ITSM, IFSM

Test Conditions TVJ = TVJM 83C; 180 sine 85C; 180 sine TVJ = 0 TVJ = TVJM ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine ms (50 Hz), sine ms (60 Hz), sine

TVJ = TVJM repetitive, f =50 Hz, = 2/3 VDRM 0.45 A non repetitive, IT = ITAVM diG/dt = 0.45 A/ms TVJ = TVJM; VDR = 2/3 VDRM RGK = method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM 300 ms

(dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight

International standard package, JEDEC TO-240 AA Direct copper bonded Al2O3 -ceramic base plate Planar passivated chips Isolation voltage V~ UL registered, E 72873 Gate-cathode twin pins for version 1B

Applications
DC motor control Softstart AC motor controller Light, heat and temperature control
Mounting torque (M5) Terminal connection torque (M5) Typical including screws

Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions

Space and weight savings Simple mounting with two screws Improved temperature and power cycling Reduced protection circuits

Symbol IRRM, IDRM VT, VT0 rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dA a Test Conditions TVJ = TVJM; VR = VRRM; VD = VDRM IT, 200 A; TVJ = 25C For power-loss calculations only (TVJ 6 V; TVJ = TVJM; TVJ = 25C TVJ = -40C TVJ = 25C TVJ = 2/3 VDRM Characteristic Values V mA

TVJ = 10 ms; 0.45 A; diG/dt = 0.45 A/ms TVJ 6 V; RGK = TVJ = 1/2 VDRM 0.45 A; diG/dt = 0.45 A/ms TVJ = TVJM; = 200 ms; -di/dt = 10 A/ms typ. 100 V; dv/dt = 20 V/ms; = 2/3 VDRM TVJ = TVJM; IT, 50 A, -di/dt = 3 A/ms per thyristor/diode; DC current module thyristor/diode; DC current module

Creepage distance on surface Strike distance through air Maximum allowable acceleration

Optional accessories for module-type MCC 56 version 1 B Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type (L = Left for pin pair UL 758, style 1385, Type (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1

Version or 8 without B in typ designation = without insert in mountig holes
Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration

Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus onstate current and ambient temperature (per thyristor or diode)

Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature


 

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1N5820 : . Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Low power loss, high efficiency For use in low voltage high frequency inverters, free wheeling, and polarity protection applications Guardring for overvoltage protection DO-201AD Pin: 1.ADODE 2.CATHODE BAND Case: JEDEC DO-15 molded plastic body Terminals: Plated axial leads,.

2SB920 : . Applications Large current switching of relay drivers, high-speed inverters, converters. Low collector-to-emitter saturation voltage : VCE(sat)=-0.5V (PNP), 0.4V (NPN) max. Large current capacity. s Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation.

AT-30511 : Microcurrent Transistors For Battery Operations. Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation 900 MHz Performance: 1.1 dB NF, 1.1 dB NF, 13 dB GA Characterized for End-OfLife Battery Use (2.7 V) SOT-23 and SOT-143 SMT Plastic Packages Tape-And-Reel Packaging Option Available[1] Agilent's.

BDY25 : Screening Options Available = ;; Polarity = NPN ;; Package = TO3 (TO204AA) ;; Vceo = 140V ;; IC(cont) = 6A ;; HFE(min) = 75 ;; HFE(max) = 180 ;; @ Vce/ic = 4V / 2A ;; FT = 10MHz ;; PD = 85W.

F2002S : RF Specific. Patented Gold Metalized Silicon Gate Enhancement Mode RF Power Vdmos Transistor.

FMX-G14S : . (=I F) 90% Recovery Point (ex. =100mA/100mA 90% Recovery Point) F) 75% Recovery Point (ex. =100mA/200mA 75% Recovery Point) .

KEL-3001A : Infrared Emitting Diodes ( GAAS ). DIMENSIONS The KEL-3001A is GaAs infrared emitting diode that is designed for high power, low forward voltage and high speed rise / fall time. This device is optimized for speed and efficiency at emission wavelength 940nm and has a high radient efficiency over a wide range of forward current. (Unit : mm) 940nm wavelength Low forward voltage High power.

U308 : N-channel Silicon Junction Field-effect Transistor. Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating At 25C free air temperature: Static Electrical Characteristics Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Gate Source Forward Voltage Drain Saturation Current (Pulsed) Dynamic Electrical.

CPH6350 : 6 A, 30 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET. s: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0430 ohms ; Package Type: CPH6, 6 PIN ; Number of units in IC: 1.

LR303K0J : RESISTOR, TEMPERATURE DEPENDENT, NTC, 30000 ohm, SURFACE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 1206, CHIP, 1206 ; Resistance Range: 30000 ohms ; Tolerance: 5 +/- % ; Power Rating: 1.00E-3 watts (1.34E-6 HP) ; Operating Temperature: 125 C (257 F).

PL2520TTE2R7M : 1 ELEMENT, 2.7 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: ONE SURFACE ; Standards and Certifications: RoHS ; Application: General Purpose, RF Choke ; Inductance Range: 2.7 microH ; Operating Temperature: -40 to 125 C (-40 to 257 F).

RR71A221MDN1KX : CAPACITOR, ALUMINUM ELECTROLYTIC, SOLID, POLARIZED, 10 V, 220 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 220 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 10 volts ; Leakage Current: 110 microamps ; ESR: 7 milliohms ; Mounting Style: Through Hole ; Operating.

TAP600K15R : RESISTOR, 600 W, 10 %, 150 ppm, 15 ohm, CHASSIS MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Bolt-on Chassis ; Resistance Range: 15 ohms ; Tolerance: 10 +/- % ; Temperature Coefficient: 150 ±ppm/°C ; Power Rating: 600 watts (0.8041 HP) ; Operating DC Voltage: 5000 volts ; Operating Temperature: -55 to 150 C (-67 to 302 F).

2N4112.MOD : 5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-204AA. s: Polarity: NPN ; Package Type: TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN.

671-1053 : DATACOM TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer.

 
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