|Category||RF & Microwaves => Amplifiers => Power Amplifiers => LNAs|
|Description||800-2000 Mhz, Variable Voltage Gain Control Amplifier|
|Datasheet||Download AM55-0023 datasheet
Highly Integrated Variable Voltage Gain Control Amplifier Operates with 5 V Supply Voltage Greater than 40 dB dynamic range High Output P1dB: +17 dBm V, 19 dBm @ 5V Low Cost 5 mm FQFP-N PackageDescription
M/A-COM's is a high performance, voltage controlled, variable gain amplifier. It has been designed for use in a broad range of applications including cellular base stations and mobile radio where AGC is required to increase system dynamic range. The gain control operates best in the 900 MHz range and also has useable gain to 2.5 GHz. DC current is low at 3V bias and at 5V bias. The package is a low cost MLF. The AM55-0023 is fabricated using M/A-COM's 0.5 micron low noise GaAs MESFET process. The process features full passivation for performance and reliability.Package FQFP-N 5.0 mm Plastic Package Forward Tape and Reel 1 Reverse Tape and Reel 1 Sample Board
If specific reel size is required, consult factory for part number assignment.
Parameter Gain Attenuation Range I/P Return Loss O/P Return Loss Noise Figure (min attn) P1dB IMD Test Conditions Frequency = 0.9 GHz Frequency = 2.0 GHz Frequency = 0.9 GHz Frequency = 2.0 GHz Frequency = 0.9 GHz Frequency = 2.0 GHz Frequency = 0.9 GHz Frequency = 2.0 GHz Frequency = 0.9 GHz Max P1dB when 5 V VDDB 5 V VDDA 5 V
Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. 300 020 Visit www.macom.com for additional data sheets and product information.Variable Voltage Gain Control Amplifier, 2.0 GHz Operating Instructions
Two pins, VCTL1 and VCTL2 control the attenuation function of this part. Varying these pins between 0 and 4.5 V controls the attenuation. VCTL1 should be controlled first to avoid degrading the input match and noise figure until more attenuation is needed. VCTL1 controls an attenuator with dB of range and 15dB of range. The AM55-0023 has two sets of Vdd pins. VDDA1,2 ,3 and VDDB1,2,3. VDDA should be supplied with 5 V. This voltage is internally stepped down V to reduce current consumption. If current consumption is not a concern OR only V is available to the part then the VDDB pins should be used. Using the VDDB pins with 5 V will also give greater IP3/IMD performance (See graphs). Note: When using one set of bias pins the other should be left open circuited.
PIN No. PIN Name Input VCTL1 NC Output NC RF Output Bias Pins Bias Pins Bias Pins Bias Pins Bias Pins Bias Pins First Attenuation Control Second Attenuation Control RF Input DescriptionParameter Input Power2 Operating Voltages2 Operating Temperature Storage Temperature
1. Exceeding any one or combination of these limits may cause permanent damage. 2. Ambient Temperature = +25°COutput Return Loss (over full attenuation range
Input Return Loss (over full attenuation range)
Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. 300 020 Visit www.macom.com for additional data sheets and product information.Variable Voltage Gain Control Amplifier, 2.0 GHz Typical Performance Curves (Cont'd)
Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. 300 020 Visit www.macom.com for additional data sheets and product information.
|Related products with the same datasheet|
|Some Part number from the same manufacture M/A-COM, Inc.|
|AM55-0023RTR 800-2000 Mhz, Variable Voltage Gain Control Amplifier|
|AM55-0024 100-400 Mhz, hi DYN Range 2 Channel if Amplifier With Power Control|
|AM55-0027 1.94-2.34 Ghz, Umts Digital Gain Control Amplifier|
|AM59-0028 L-band 250mW pa|
|AM59-0029 S-band HBT pa|
|AMC-119 High Performance Amplifier, 8 DB Gain, 30 - 250 MHZ|
|AMC-123 High Performance Amplifier, 10 DB Gain 5 - 500 MHZ|
|AMC-132 High Performance Amplifier, 10 DB Gain, 5 - 200 MHZ|
|AMC-134SMA High Performance Amplifier, 10 DB Gain 5 - 500 MHZ|
|AMC-136 High Performance Amplifier, 20 DB Gain, 10 - 200 MHZ|
|AMC-138 High Performance Amplifier, 25 DB Gain, 10 - 200 MHZ|
|AMC-140 High Performance Amplifier, 29 DB Gain, 10 - 200 MHZ|
|AMC-142 Low Noise Amplifier, 12 DB Gain, 200 - 1000 MHZ|
|AMC-143 Low Noise Amplifier, 16 DB Gain, 5 - 500 MHZ|
|AMC-145 High Performance Amplifier, 11 DB Gain, 10 - 1000 MHZ|
ESJ-4-1-75 : E-series 4-way 0 Power Divider 5 - 1000 MHZ
MA4E2502H-1246 : Mixing_Detector Diodes High Barrier Silicon Schottky Surmount
MA4L22-134 : Limiter Pin Diodes
MDS-149 : Double-Balanced Mixer
AM55-0004TR : 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER Specifications: Amplifier Type: Power Amplifier ; Applications: RF Microwave ; Frequency Range: 2400 to 2500 MHz ; Minimum Gain: 12 dB ; Input VSWR: 1.5 1 ; Output VSWR: 1.5 1 ; Package Type: PLASTIC, SSOP-24 ; Nominal Impedance: 50 ; Operating Temperature: -40 to 85 C (-40 to 185 F)
AMC-181SMA : 10 MHz - 400 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER Specifications: Amplifier Type: Power Amplifier ; Applications: RF Microwave ; Frequency Range: 10 to 400 MHz ; Minimum Gain: 8 dB ; Input VSWR: 2.2 1 ; Output VSWR: 2.2 1 ; Nominal Impedance: 50 ; Operating Temperature: -55 to 85 C (-67 to 185 F)
MA4E978M-1000 : SILICON, MEDIUM BARRIER SCHOTTKY, C-X BAND, MIXER DIODE Specifications: Arrangement: Common Catode ; Diode Type: MIXER DIODE ; Diode Applications: Mixer ; Package: BEAM LEAD PACKAGE-3 ; Pin Count: 3 ; Number of Diodes: 2
ML4405-30 : SILICON, STEP RECOVERY DIODE Specifications: Configuration: Single ; Pin Count: 2 ; Number of Diodes: 1 ; VBR: 20 volts
ML4578-103 : 25 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE Specifications: Diode Type: VARIABLE CAPACITANCE DIODE
MLA2260-202B2 : 12000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER Specifications: Amplifier Type: Power Amplifier ; Applications: RF Microwave ; Frequency Range: 12000 to 18000 MHz ; Minimum Gain: 9 dB ; Input VSWR: 2 1 ; Output VSWR: 2 1 ; Operating Temperature: -55 to 95 C (-67 to 203 F)
7A0126 : = Mixers ;; Size LXWXH = 2.35 X 2.35 X 0.37" ;; Packaging = Aluminum Cased ;; Frequency MHZ = 2000-4000 ;; Power Handling Watts =.
AD6636 : 150 MSPS Wideband Digital Down Converter (DDC)The AD6636 is a Digital Down Converter Intended For Direct if Sampling or Highly Sampled Baseband Radios Requiring Wide-bandwidth Input Signals. It Has Been Optimized For The Demanding Filtering Requirements of Wideband Standards Like, CDMA2000, Umts, And TD-SCDMA. The AD6636 is Designed to be Used as Part.
BX9137 : Frequency (MHz) = 10 - 2000 ;; Gain (Typ/Min) (dB) = 9.5 / 7 ;; Noise Figure (Typ/Max) (dB) = 6.5 / 10 ;; P1dB Comp Point (Typ/Min) (dBm) = +15.5 / +13 ;; 3rd Order Intercept (Typ) (dBm) = +28 ;; 2nd Order Intercept (Typ) (dBm) = +38 ;; DC Power (Typ) (V/mA) = +15 / +45 ;; Package = Package = Package = 4 Pin TO-8 Package = Surface Mount Package = Flatpack.
CX74005 : ASIC. Vga And I/q Demodulator Asic. The CX74005 Application-Specific Integrated Circuit (ASIC) is a Variable Gain Amplifier (VGA) and I/Q demodulator, intended for use in Code Division Multiple Access (CDMA) portable phones in both cellular and Personal Communications System (PCS) bands. As a trimode IC, it can be used in CDMA mode or Advanced Mobile Phone System (AMPS) mode. The device.
FMM5805X : MMICs->GaAs MMICs. Millimeterwave Power Amplifiers. High Output Power: = 31.0dBm (Typ.) High Gain: = 21.0dB (Typ.) High PAE: add = 30% (Typ.) Impedance Matched Zin/Zout 50 0.25µm PHEMT Technology The is a high-gain, high power, 3-stage MMIC amplifier designed for operation in the17.5-20.0 GHz frequency range. This amplifier has an input and output designed for use in 50 systems.This device is well suited.
HMMC-5220 : DC-15 GHZ HBT Series-shunt Amplifier. High Bandwidth, F-1dB: 16 GHz Typical Moderate Gain: @ 1.5 GHz @ 1.5 GHz: 12.5 dBm Typical Low l/f Noise Corner: <20 kHz Typical Single Supply Operation: >4.75 volts 44 mA Typ. Low Power Dissipation: 190 mW Typ. for chip Chip Size: Chip Size Tolerance: Chip Thickness: Pad Dimensions: × 18.1 mils) µm 0.4 mils) ± 0.6 mils) × 2.8 mils), or larger.
MAAM37000 : LNAs. 3.5-7 Ghz, Low Noise GAAS Mmic Amplifier.
MAAMGM0002-DIE : 1-18GHz Distributed Amplifier. to 20.5 GHz Operation 0.1 Watt Saturated Output Power Level Select at Test Biasing Variable Drain Voltage (5-6V) Operation Self-Aligned MSAG® MESFET Process The a 0.1W Distributed Amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. The MMIC can be used as a broadband amplifier stage as a driver.
MAMXES0050 : E-Series SMT Schottky Mixer 2110 - 2170 MHZ. M/A-COM's is a Low Cost, Broadband, high performance Double Balanced Mixer designed for use in high volume wireless applications. The device has been optimised by careful selection of the Schottky Diode and Balun Transformer for excellent performance. MAMXES0050 is available an SM-87 surface mount package and reflows using standard soldering reflow.
MASW4030G : DC-4 GHZ GAAS DPDT Switch. Absorbtive or Reflective Excellent Intermodulation Products Excellent Temperature Stability Fast Switching Speed, 3 ns Typical Ultra Low DC Power Consumption Independent Bias Control Impedance Switching Characteristics tRISE, tFALL or 90/10% RF) tON, tOFF (50% CTL to 90/10% RF) Transients (In-Band) Input Power for 1dB Compression** Control Voltages.
MRF9135L : Power. MRF9135L, MRF9135LR3, MRF9135LSR3 880 Mhz, 135 W, 26 V Lateral N-channel RF Power MOSFETs.
TH72031 : Transmitter - 868/915MHz, FSK (SOIC8).
CM1400-03 : The CM1400-03 is a six channel low-pass filter array that reduces EMI/RFI emissions while at the same time providing ESD protection. It is used on data ports on mobile devices. To reduce EMI/RFI emissions, the CM1400-03 integrates a pi-style filter (C-R-C) for each of the 6 channels. Each high quality filter provides greater than 30dB attenuation in the 800-2700.
CX24109 : Digital Satellite Tuner The CX24109 is a highly integrated, direct down-conversion satellite tuner intended for high-volume digital video, audio, and data receivers. When combined with the CX24121 QPSK demodulator/FEC decoder, the chip set provides a complete broadband satellite front-end solution capable of operating from 1-45 MSps in the most demanding.