Details, datasheet, quote on part number: MAX2601ESA+
PartMAX2601ESA+
CategoryRF & Microwaves => Transistors => Power Transistors
Description3.6V, 1W RF Power Transistors For 900MHz Applications
The MAX2601/MAX2602 are RF power transistors optimized for use in portable cellular and wireless equipment that operates from three NiCd/NiMH cells or one Li-Ion cell. These transistors deliver 1W of RF power from a 3.6V supply with efficiency of 58% when biased for constant-envelope applications (e.g., FM or FSK). For NADC (IS-54) operation, they deliver 29dBm with -28dBc ACPR from a 4.8V supply.

The MAX2601 is a high-performance silicon bipolar RF power transistor. The MAX2602 includes a high-performance silicon bipolar RF power transistor, and a biasing diode that matches the thermal and process characteristics of the power transistor. This diode is used to create a bias network that accurately controls the power transistors collector current as the temperature changes.

The MAX2601/MAX2602 can be used as the final stage in a discrete or module power amplifier. Silicon bipolar technology eliminates the need for voltage inverters and sequencing circuitry, as required by GaAsFET power amplifiers. Furthermore, a drain switch is not required to turn off the MAX2601/MAX2602. This increases operating time in two ways: it allows lower system end-of-life battery voltage, and it eliminates the wasted power from a drain-switch device.
CompanyMaxim Integrated Products
DatasheetDownload MAX2601ESA+ datasheet
Quote
Find where to buy
 
  

 

Features, Applications

Low Voltage: Operates from 1 Li-Ion or 3 NiCd/NiMH Batteries DC-to-Microwave Operating Range 1W Output Power at 900MHz On-Chip Diode for Accurate Biasing (MAX2602) Low-Cost Silicon Bipolar Technology Does Not Require Negative Bias or Supply Switch High Efficiency: 58%

The MAX2601/MAX2602 are RF power transistors optimized for use in portable cellular and wireless equipment that operates from three NiCd/NiMH cells or one Li-Ion cell. These transistors deliver of RF power from a 3.6V supply with efficiency of 58% when biased for constant-envelope applications (e.g., FM or FSK). For NADC (IS-54) operation, they deliver 29dBm with -28dBc ACPR from a 4.8V supply. The is a high-performance silicon bipolar RF power transistor. The MAX2602 includes a highperformance silicon bipolar RF power transistor, and a biasing diode that matches the thermal and process characteristics of the power transistor. This diode is used to create a bias network that accurately controls the power transistor's collector current as the temperature changes. The MAX2601/MAX2602 can be used as the final stage in a discrete or module power amplifier. Silicon bipolar technology eliminates the need for voltage inverters and sequencing circuitry, as required by GaAsFET power amplifiers. Furthermore, a drain switch is not required to turn off the MAX2601/MAX2602. This increases operating time in two ways: it allows lower system end-of-life battery voltage, and it eliminates the wasted power from a drain-switch device. The MAX2601/MAX2602 are available in thermally enhanced, 8-pin SO packages, which are screened to the extended temperature range to +85C).

PART MAX2601ESA MAX2602ESA TEMP RANGE to +85C PIN-PACKAGE 8 SOIC 8 SOIC

Narrow-Band PCS (NPCS) 915MHz ISM Transmitters Microcellular GSM (Power Class 5) AMPS Cellular Phones Digital Cellular Phones Two-Way Paging CDPD Modems Land Mobile Radios

Typical Application Circuit appears at end of data sheet.

For pricing, delivery, and ordering information, please contact Maxim Direct 1-888-629-4642, or visit Maxim's website at www.maxim-ic.com.

Collector-Emitter Voltage, Shorted Base (VCES)....................17V Emitter Base Reverse Voltage (VEBO)...................................2.3V BIAS Diode Reverse Breakdown Voltage (MAX2602)..........2.3V Average Collector Current (IC)........................................1200mA Continuous Power Dissipation (TA = +70C) SOIC (derate 80mW/C above +70C) (Note 1).............6.4W Operating Temperature to +85C Storage Temperature to +165C Junction Temperature......................................................+150C Lead Temperature (soldering, 10s).................................+300C

Note 1: Backside slug must be properly soldered to ground plane (see Slug Layout Techniques section).

Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

(TA = TMIN to TMAX, unless otherwise noted.) PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage DC Current Gain Collector Cutoff Current Output Capacitance SYMBOL BVCEO BVCES LVCEO BVCBO hFE ICES COB < 100A, emitter open = 250mA, VCE = 3V VCE = 6V, VBE = 0V VCB = 1MHz CONDITIONS Open base Shorted base MIN A pF TYP MAX UNITS V

(Test Circuit of Figure 1, VCC = 3.6V, VBB = 0.750V, ZLOAD = ZSOURCE = 50, POUT = +25C, unless otherwise noted.) PARAMETER Frequency Range Base Current Harmonics Power Gain Collector Efficiency Stability under Continuous Load Mismatch Conditions Two-Tone IMR Noise Figure VSWR IM5 NF SYMBOL 2fo, 3fo VCC = 3.6V, POUT = 30dBm VCC = 3.0V, POUT = 29dBm POUT 30dBm No modulation VCC = 5.5V, all angles (Note 3) POUT = +30dBm total power, = 836MHz VBB = 0.9V (Note 2) CONDITIONS MIN DC dBc dB TYP MAX 1 UNITS GHz mA dBc dB %

Note 2: Guaranteed by design. Note 3: Under these conditions: a) no spurious oscillations shall be observed at collector greater than b) no parametric degradation is observable when mismatch is removed; and c) no current draw in excess of the package dissipation capability is observed.

(Test Circuit of Figure 1, input/output matching networks optimized for specific measurement frequency, VCC = 3.6V, VBB = 0.750V, POUT = 30dBm, ZLOAD = ZSOURCE = +25C, unless otherwise noted.)

POUT, IM3, AND IM5 ARE RMS COMPOSITE TWO-TONE POWER LEVELS POUT
COLLECTOR EFFICIENCY vs. OUTPUT POWER (IS-54 /4 DQPSK MODULATION, VBB = 0.85V)
35 POUT 25 POUT, IM3, AND IM5 ARE RMS COMPOSITE TWO-TONE POWER LEVELS

PIN NAME MAX2601 Slug MAX2602 Slug C E Transistor Collector Transistor Emitter Anode of the Biasing Diode that matches the thermal and process characteristics of the power transistor. Requires a high-RF-impedance, lowDC-impedance (e.g., inductor) connection to the transistor base (Pin 4). Current through the biasing diode (into Pin 3) is proportional to 1/15 the collector current in the transistor. Transistor Base 3 FUNCTION


 

Related products with the same datasheet
MAX2601ESA
MAX2601ESA-T
MAX2601ESA+T
MAX2602
MAX2602E/D
MAX2602ESA
MAX2602ESA-T
MAX2602ESA+
MAX2602ESA+T
Some Part number from the same manufacture Maxim Integrated Products
MAX2601ESA+T 3.6V, 1W RF Power Transistors For 900MHz ApplicationsThe MAX2601/MAX2602 are RF power transistors optimized for use in portable cellular and wireless equipment that operates from three NiCd/NiMH cells
MAX2036 Ultrasound VGA Integrated With CW Octal MixerThe MAX2036 8-channel variable-gain amplifier (VGA) and programmable octal mixer array is designed for high linearity, high dynamic range, and low-noise performance
MAX19995A Dual, SiGe, High-Linearity, 1700MHz To 2200MHz Downconversion Mixer With LO Buffer/SwitchThe MAX19995A dual-channel downconverter is designed to provide 8.7dB of conversion gain, +24.8dBm input IP3,
DS8313 Smart Card InterfaceThe DS8313 smart card and SIM interface IC is a low-cost, analog front-end for a smart card reader designed for smart card applications that do not require the use of the auxiliary
MAXQ1850 Secure Cryptographic Controller With Rapid Zeroization TechnologyThe MAXQ1850 is a low-power, 32-bit RISC device designed for electronic commerce, banking, and data security systems. It combines high-performance,
MAX19996A SiGe, High-Linearity, 2000MHz To 3900MHz Downconversion Mixer With LO BufferThe MAX19996A single, high-linearity downconversion mixer provides 8.7dB conversion gain, +24.5dBm IIP3, and 9.8dB noise figure
MAX2395 WCDMA Quasi-Direct Modulator With VGA And PA DriverThe MAX2395 fully monolithic quasi-direct modulator IC is designed for use in WCDMA/UMTS transmitters. The quasi-direct modulation architecture reduces
MAX16021 Low-Power ?P Supervisory Circuits With Battery-Backup Circuit And Chip-Enable GatingThe MAX16016/MAX16020/MAX16021 supervisory circuits monitor power supplies, provide battery-backup control, and chip-enable

MAX392EPE : Precision,quad,spst Analog Switches

MAX690MFB/883B : Military/Aerospace->Military Standard Microprocessor Supervisory Circuit

MAX6722AUTYVD3+ : Dual/Triple, Ultra-Low-Voltage, SOT23 P Supervisory Circuits The MAX6715AMAX6729A/MAX6797A are ultra-low-voltage microprocessor (??P) supervisory circuits designed to monitor two or three system power-supply voltages. These devices assert a system reset if any monitored supply falls below its fac

MAX4233AUB+ : High-Output-Drive, 10MHz, 10V/s, Rail-to-Rail I/O Op Amps With Shutdown In SC70 The MAX4230MAX4234 single/dual/quad, high-output-drive CMOS op amps feature 200mA of peak output current, rail-to-rail input, and output capability from single 2.7V to 5.5V supply. These amplifiers exhibit high slew r

MAX488EPA : Low-Power, Slew-Rate-Limited RS-485/RS-422 Transceivers The MAX481, MAX483, MAX485, MAX487-MAX491, and MAX1487 are low-power transceivers for RS-485 and RS-422 communication. Each part contains one driver and one receiver. The MAX483, MAX487, MAX488, and MAX489 feature reduced slew-rate drivers tha

MAX4389EUT-T : Ultra-Small, Low-Cost, 85MHz Op Amps With Rail-to-Rail Outputs And Disable The MAX4389/MAX4390/MAX4392MAX4396 family of op amps are unity-gain stable devices that combine high-speed performance, rail-to-rail outputs, and disable mode. These devices are targeted for applications where an input or a

MAX779L : Low-voltage Input, 3v/3.3v/5v/ Adjustable Output, Step-up Dc-dc Converters

MAX6321HPUK37AW-T : 5-Pin P Supervisory Circuits With Watchdog And Manual Reset The MAX6316MAX6322 family of microprocessor (P) supervisory circuits monitors power supplies and microprocessor activity in digital systems. It offers several combinations of push/pull, open-drain, and bidirectional (such as Motorola 68

MAX809REUR-T10 : 3-Pin Microprocessor Reset Circuits The MAX803/MAX809/MAX810 are microprocessor (P) supervisory circuits used to monitor the power supplies in P and digital systems. They provide excellent circuit reliability and low cost by eliminating external components and adjustments when used with +5V, +3.3

MAX3222EEUP : 15kV ESD-Protected, Down To 10nA, 3.0V To 5.5V, Up To 1Mbps, True RS-232 Transceivers The MAX3222E/MAX3232E/MAX3237E/MAX3241E/MAX3246E +3.0V-powered EIA/TIA-232 and V.28/V.24 communications interface devices feature low power consumption, high data-rate capabilities, and enhanced electrostatic-dis

MAX6440UTAISD3+T : Pmic - Battery Management Integrated Circuit (ics) Tape & Reel (TR) 1 V ~ 5.5 V; IC BATTERY MON SNGL SOT23-6 Specifications: Battery Chemistry: Alkaline, Li-Ion, NiCd, NiMH ; Function: Battery Monitor ; Package / Case: SOT-23-6 ; Packaging: Tape & Reel (TR) ; Operating Temperature: -40C ~ 85C ; Voltage - Supply: 1 V ~ 5.5 V ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

 
0-C     D-L     M-R     S-Z