Details, datasheet, quote on part number: MAX2602E/D
PartMAX2602E/D
CategoryRF & Microwaves => Transistors => Power Transistors
Description3.6V, 1W RF Power Transistors For 900MHz Applications
The MAX2601/MAX2602 are RF power transistors optimized for use in portable cellular and wireless equipment that operates from three NiCd/NiMH cells or one Li-Ion cell. These transistors deliver 1W of RF power from a 3.6V supply with efficiency of 58% when biased for constant-envelope applications (e.g., FM or FSK). For NADC (IS-54) operation, they deliver 29dBm with -28dBc ACPR from a 4.8V supply.

The MAX2601 is a high-performance silicon bipolar RF power transistor. The MAX2602 includes a high-performance silicon bipolar RF power transistor, and a biasing diode that matches the thermal and process characteristics of the power transistor. This diode is used to create a bias network that accurately controls the power transistors collector current as the temperature changes.

The MAX2601/MAX2602 can be used as the final stage in a discrete or module power amplifier. Silicon bipolar technology eliminates the need for voltage inverters and sequencing circuitry, as required by GaAsFET power amplifiers. Furthermore, a drain switch is not required to turn off the MAX2601/MAX2602. This increases operating time in two ways: it allows lower system end-of-life battery voltage, and it eliminates the wasted power from a drain-switch device.
CompanyMaxim Integrated Products
DatasheetDownload MAX2602E/D datasheet
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Features, Applications

Low Voltage: Operates from 1 Li-Ion or 3 NiCd/NiMH Batteries DC-to-Microwave Operating Range 1W Output Power at 900MHz On-Chip Diode for Accurate Biasing (MAX2602) Low-Cost Silicon Bipolar Technology Does Not Require Negative Bias or Supply Switch High Efficiency: 58%

The MAX2601/MAX2602 are RF power transistors optimized for use in portable cellular and wireless equipment that operates from three NiCd/NiMH cells or one Li-Ion cell. These transistors deliver of RF power from a 3.6V supply with efficiency of 58% when biased for constant-envelope applications (e.g., FM or FSK). For NADC (IS-54) operation, they deliver 29dBm with -28dBc ACPR from a 4.8V supply. The is a high-performance silicon bipolar RF power transistor. The MAX2602 includes a highperformance silicon bipolar RF power transistor, and a biasing diode that matches the thermal and process characteristics of the power transistor. This diode is used to create a bias network that accurately controls the power transistor's collector current as the temperature changes. The MAX2601/MAX2602 can be used as the final stage in a discrete or module power amplifier. Silicon bipolar technology eliminates the need for voltage inverters and sequencing circuitry, as required by GaAsFET power amplifiers. Furthermore, a drain switch is not required to turn off the MAX2601/MAX2602. This increases operating time in two ways: it allows lower system end-of-life battery voltage, and it eliminates the wasted power from a drain-switch device. The MAX2601/MAX2602 are available in thermally enhanced, 8-pin SO packages, which are screened to the extended temperature range to +85C).

PART MAX2601ESA MAX2602ESA TEMP RANGE to +85C PIN-PACKAGE 8 SOIC 8 SOIC

Narrow-Band PCS (NPCS) 915MHz ISM Transmitters Microcellular GSM (Power Class 5) AMPS Cellular Phones Digital Cellular Phones Two-Way Paging CDPD Modems Land Mobile Radios

Typical Application Circuit appears at end of data sheet.

For pricing, delivery, and ordering information, please contact Maxim Direct 1-888-629-4642, or visit Maxim's website at www.maxim-ic.com.

Collector-Emitter Voltage, Shorted Base (VCES)....................17V Emitter Base Reverse Voltage (VEBO)...................................2.3V BIAS Diode Reverse Breakdown Voltage (MAX2602)..........2.3V Average Collector Current (IC)........................................1200mA Continuous Power Dissipation (TA = +70C) SOIC (derate 80mW/C above +70C) (Note 1).............6.4W Operating Temperature to +85C Storage Temperature to +165C Junction Temperature......................................................+150C Lead Temperature (soldering, 10s).................................+300C

Note 1: Backside slug must be properly soldered to ground plane (see Slug Layout Techniques section).

Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

(TA = TMIN to TMAX, unless otherwise noted.) PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Sustaining Voltage Collector-Base Breakdown Voltage DC Current Gain Collector Cutoff Current Output Capacitance SYMBOL BVCEO BVCES LVCEO BVCBO hFE ICES COB < 100A, emitter open = 250mA, VCE = 3V VCE = 6V, VBE = 0V VCB = 1MHz CONDITIONS Open base Shorted base MIN A pF TYP MAX UNITS V

(Test Circuit of Figure 1, VCC = 3.6V, VBB = 0.750V, ZLOAD = ZSOURCE = 50, POUT = +25C, unless otherwise noted.) PARAMETER Frequency Range Base Current Harmonics Power Gain Collector Efficiency Stability under Continuous Load Mismatch Conditions Two-Tone IMR Noise Figure VSWR IM5 NF SYMBOL 2fo, 3fo VCC = 3.6V, POUT = 30dBm VCC = 3.0V, POUT = 29dBm POUT 30dBm No modulation VCC = 5.5V, all angles (Note 3) POUT = +30dBm total power, = 836MHz VBB = 0.9V (Note 2) CONDITIONS MIN DC dBc dB TYP MAX 1 UNITS GHz mA dBc dB %

Note 2: Guaranteed by design. Note 3: Under these conditions: a) no spurious oscillations shall be observed at collector greater than b) no parametric degradation is observable when mismatch is removed; and c) no current draw in excess of the package dissipation capability is observed.

(Test Circuit of Figure 1, input/output matching networks optimized for specific measurement frequency, VCC = 3.6V, VBB = 0.750V, POUT = 30dBm, ZLOAD = ZSOURCE = +25C, unless otherwise noted.)

POUT, IM3, AND IM5 ARE RMS COMPOSITE TWO-TONE POWER LEVELS POUT
COLLECTOR EFFICIENCY vs. OUTPUT POWER (IS-54 /4 DQPSK MODULATION, VBB = 0.85V)
35 POUT 25 POUT, IM3, AND IM5 ARE RMS COMPOSITE TWO-TONE POWER LEVELS

PIN NAME MAX2601 Slug MAX2602 Slug C E Transistor Collector Transistor Emitter Anode of the Biasing Diode that matches the thermal and process characteristics of the power transistor. Requires a high-RF-impedance, lowDC-impedance (e.g., inductor) connection to the transistor base (Pin 4). Current through the biasing diode (into Pin 3) is proportional to 1/15 the collector current in the transistor. Transistor Base 3 FUNCTION


 

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