Details, datasheet, quote on part number: 1N6711R
CategoryDiscrete => Diodes & Rectifiers => Fast Recovery Diodes
DescriptionUltra Fast Rectifier (less Than 100ns)
CompanyMicrosemi Corporation
DatasheetDownload 1N6711R datasheet


Features, Applications


passivated mesa structure for very low leakage currents Hermetically sealed, low profile ceramic surface mount power package Low package inductance Very low thermal resistance Available as standard polarity (strap-to-anode: 1N6710 and 1N6711) and reverse polarity (strap-to-cathode: 1N6710R and 1N6711R)

DESCRIPTION Peak Repetitive Reverse Voltage 1N6710,R 1N6711,R Working Peak Reverse Voltage 1N6711,R DC Blocking Voltage 1N6710,R 1N6711,R Average Rectified Forward Current, Tc 125C Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case: SYMBOL VRRM VRWM VR IF(ave) IFSM Tj Tstg JC

DESCRIPTION Reverse (Leakage) Current Forward Voltage pulse test, pw= 300 s d/c 2% SYMBOL VF12 VF dVF/dT

CONDITIONS VR= rated VR, Tc= 25C VR= rated VR, Tc= 125C IF= 1 A, Tc= 25C IF= 10 A, Tc= 25C IF= 30 A, Tc= 25C IF= 50 A, Tc= 25C IF= 1 A, Tc= 125C IF= 10 A, Tc= 125C IF= 30 A, Tc= 125C IF= 50 A, Tc= 125C IF= 1 A, Tc= -55C IF= 10 A, Tc= -55C IF= 30 A, Tc= -55C IF= 50 A, Tc= -55C IF= 100 A, Tc= 25C IF= to 125C, ave.) IF= to 125C, ave) IF= to 125C, ave) VR= 10 Vdc VR= 5 Vdc IR= 100 A, Tc= IF=.5 A, IR= IRR=.25 A

Temperature Coefficient of Forward Voltage Junction Capacitance Breakdown Voltage Reverse Recovery Time


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