Details, datasheet, quote on part number: 1N6819
CategoryDiscrete => Diodes & Rectifiers => Schottky Barrier Rectifiers => General Purpose/
TitleGeneral Purpose/
DescriptionSchottky Rectifier
CompanyMicrosemi Corporation
DatasheetDownload 1N6819 datasheet
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Features, Applications


Tungsten schottky barrier Oxide passivated structure for very low leakage currents Guard ring protection for increased reverse energy capability Epitaxial structure minimizes forward voltage drop Hermetically sealed, low profile ceramic surface mount power package Low package inductance Very low thermal resistance Available as standard polarity (strap is anode: 1N6819) and reverse polarity (strap is cathode: 1N6819R)


DESCRIPTION Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, 125 C derating, forward current, 125 C Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave Peak Repetitive Reverse Surge Current, tp= f= 1kHz Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case: 1N6819 1N6819R

DESCRIPTION Reverse (Leakage) Current Forward Voltage pulse test, pw= 300 s d/c 2% SYMBOL VF15 VF16 VFa VFb VFc Cj1 Cj2 BVR CONDITIONS VR= 45 Vdc, Tc= 25 C VR= 12 Vdc, Tc= 125 C VR= 36 Vdc, Tc= 125 C VR= 45 Vdc, Tc= 125 C IF= 2 A, Tc= 25 C IF= 10 A, Tc= 25 C IF= 25 A, Tc= 25 C IF= 50 A, Tc= 25 C IF= 75 A, Tc= 25 C IF= 100 A, Tc= 25 C IF= 2 A, Tc= -55 C IF= 10 A, Tc= -55 C IF= 25 A, Tc= -55 C IF= 50 A, Tc= -55 C IF= 75 A, Tc= -55 C IF= 2 A, Tc= 125 C IF= 10 A, Tc= 125 C IF= 25 A, Tc= 125 C IF= 50 A, Tc= 125 C IF= 75 A, Tc= 125 C IF= 100 mA, Tc= 25 C IF= 100 mA, Tc= 125 C IF= 100 mA, Tc= -55 C VR= 10 Vdc VR= 5 Vdc IR= 5 mA, Tc= 25 C IR= 5 mA, Tc= -55 C MIN TYP. MAX UNIT pF V


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