Details, datasheet, quote on part number: JANTX1N5544B
PartJANTX1N5544B
CategoryDiscrete => Diodes & Rectifiers => Protection
DescriptionLow Voltage Avalanche Zener
CompanyMicrosemi Corporation
DatasheetDownload JANTX1N5544B datasheet
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Some Part number from the same manufacture Microsemi Corporation
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Same catergory

2N2218 : Screening Options Available = ;; Polarity = NPN ;; Package = TO39 (TO205AD) ;; Vceo = 30V ;; IC(cont) = 0.8A ;; HFE(min) = 40 ;; HFE(max) = 120 ;; @ Vce/ic = 10V / 150mA ;; FT = 250MHz ;; PD = 0.8W.

2N6490 : Bipolar Power TO220 PNP 15A 60V, Package: TO-220, Pins=3. hFE = 5.0 Adc = 5.0 (Min) = 15 Adc Collector­Emitter Sustaining Voltage VCEO(sus) = 60 Vdc (Min) = 80 Vdc (Min) 2N6488, 2N6491 High Current Gain Bandwidth Product = 5.0 MHz (Min) = 1.0 Adc TO­220AB Compact Package Rating Symbol VCEO VCB VEB 80 90 Unit Vdc Adc Collector­Emitter Voltage Collector­Base Voltage Emitter­Base Voltage Base Current 15 5.0 Collector.

BAS20-7 : Surface Mount Fast Switching Diode. SURFACE MOUNT FAST SWITCHING DIODE Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A.

BUL510 : High Voltage Fast-switching NPN Power Transistor. STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC APPLICATIONS s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIES s ELECTRONIC TRANSFORMER FOR HALOGEN LAMP The BUL510 is manufactured using high voltage Multiepitaxial.

IXFN44N50Q : HiperFET(tm) Power MOSFETs Q-class: 500v, 44a. N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Symbol Test Conditions to 150°C; RGS 1 MW Continuous Transient = 25°C, pulse width limited by TJM IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, 44N50 48N50 Either Source terminal at miniBLOC can be used as Main.

M4-T3 : 1.0a Surface Mount Glass Passivated Rectifier.

MIG300J101H : Intelligent IGBT Modules - 600V. ic (amps) = 300 ;; Vce (sat) Max = 2.5 ;; Ton (usec) = 2.5.

STB70NF3LL : Low Voltage. N-channel 30V - 0.0075 Ohm - 70A D2PAK/TO-220 Low Gate Charge StripFET Power MOSFET.

CTLDM8002A-M621BK : 280 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 50 volts ; rDS(on): 2.5 ohms ; Package Type: 2 X 1 MM, ROHS COMPLIANT, LEADLESS, CASE TLM621, 6 PIN ; Number of units in IC: 1.

DB3X313F : MIXER DIODE. s: Diode Type: MIXER DIODE ; Diode Applications: Mixer ; RoHS Compliant: RoHS.

DSC5G02 : 15 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: HALOGEN FREE AND ROHS COMPLIANT, SMINI3-F2-B, 3 PIN.

FMKA140MA : 1 A, 40 V, SILICON, SIGNAL DIODE, DO-214AC. s: Package: SMA, 2 PIN ; Number of Diodes: 1 ; IF: 1000 mA.

PDS560-7 : 5 A, 60 V, SILICON, RECTIFIER DIODE. s: Rectifier Configuration / Technology: Schottky ; Package: GREEN, PLASTIC, POWERDI 5, 3 PIN ; Number of Diodes: 1 ; VRRM: 60 volts ; IF: 5000 mA ; RoHS Compliant: RoHS.

PHP18N20E127 : 18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 200 volts ; rDS(on): 0.1800 ohms ; Number of units in IC: 1.

RZM002P02 : 200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: P-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 20 volts ; rDS(on): 1.2 ohms ; Package Type: VMT3, 3 PIN ; Number of units in IC: 1.

SQJ848AEP-T1-GE3 : 24 A, 40 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 40 volts ; rDS(on): 0.0090 ohms ; Package Type: SO-8, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN ; Number of units in IC: 1.

 
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