Details, datasheet, quote on part number: M68701M
PartM68701M
CategoryDiscrete => Transistors => Bipolar => RF
DescriptionRF Power Module For 890-915MHz, 6W FM Digital Radio
CompanyMitsubishi Electronics America, Inc.
DatasheetDownload M68701M datasheet
Quote
Find where to buy
 
  
Some Part number from the same manufacture Mitsubishi Electronics America, Inc.
M68702H RF Power Module For 150-175MHz, 12.5V, 60W FM Mobile Radio
M68702L RF Power Module For 135-160MHz, 12.5V, 60W FM Mobile Radio
M68703HA RF Power Module For 440-470MHz, 12.5V, 50W FM Mobile Radio
M68703LA RF Power Module For 400-430MHz, 12.5V, 50W FM Mobile Radio
M68703MA RF Power Module For 430-450MHz, 12.5V, 50W FM Mobile Radio
M68703SHA RF Power Module For 470-490MHz, 12.5V, 50W FM Mobile Radio
M68706 RF Power Module For 250-270MHz, 12.5V, 30W FM Mobile Radio
M68706H RF Power Module For 300-308MHz, 12.5V, 20W FM Mobile Radio
M68707 RF Power Module For 250-270MHz, 9.6V, 7W FM Portable Radio
M68707L RF Power Module For 215-230MHz, 9.6V, 7W FM Portable Radio
M68710EL RF Power Module For 290-330MHz, 2W FM Portable Radio
M68710H RF Power Module For 450-470MHz, 6V, 2W FM Portable Radio
M68710L RF Power Module For 400-430MHz, 5V, 2W FM Portable Radio
M68710SL RF Power Module For 350-380MHz, 6V, 2W FM Portable Radio
M68710TL RF Power Module For 330-360MHz, 2W FM Portable Radio
M68710UH RF Power Module For 470-520MHz, 6V, 2W FM Portable Radio
M68710UL RF Power Module For 380-400MHz, 6V, 2W FM Portable Radio
M68711 RF Power Module For 889-915MHz, 9.3V, 3.8W FM Portable Radio
M68712N RF Power Module For 142-163MHz, 6V, 2W FM Portable Radio
M68716
M68719 RF Power Module For 1240-1300MHz, 12.5V, 16W FM Mobile Radio

M37103M4-658SP : Single-chip 8-bit CMOS Microcomputer For Voltage Synthesizer With On-screen Display Controller

M38254M4-214FP : Single-chip 8-bit CMOS Microcomputer

M38273M5-XXXHP : Single-chip 8-bit CMOS Microcomputer

M38503M2-XXXFP : 38000 Series RAM Size:512 Bytes; Single-chip 8-bit Microcomputer

M38866M8A-XXXHP : RAM Size: 896bytes Single Chip 8-bit CMOS Microcomputer

M38867F2AHP : RAM Size: 1024bytes; Single-chip 8-bit CMOS Microcomputer

M38869MDA-XXXHP : RAM Size: 2048bytes Single Chip 8-bit CMOS Microcomputer

M66014FP : 16-bit Serial Bus Controller

Same catergory

175BGQ030 : >100 Amp. 30V 175A Schottky Discrete Diode in a Powirtab Package. IF(AV) Rectangular waveform @ TC IDC VRRM IFSM 5 s sine VF @175 Apk typical @TJ TJ range Maximum 175BGQ030 Units A C The 175BGQ030 Schottky rectifier has been optimized for ultra low forward voltage drop specifically for low voltage output in high current AC/DC power supplies. The proprietary barrier technology allows for reliable operation to 150C.

2SB0779 : VCEO(V) = -20 ;; IC(A) = -0.5 ;; HFE(min) = 90 ;; HFE(max) = 220 ;; Package = Mini3-G1.

BF421 : NPN Silicon Transistors With High Reverse Voltage. PNP Silicon Transistors With High Reverse Voltage q High breakdown voltage q Low collector-emitter saturation voltage q Low capacitance q Complementary types: BF 422 (NPN) 3 1 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage RBE 2.7 k Collector-base voltage Emitter-base voltage Collector current Peak base current Junction.

BF457 : Small-signal Transistors. PNP HIGH-VOLTAGE POWER TRANSISTORS TYPE NUMBER BF870 BF872 PACKAGE TO-126 TO-202 VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) NPN COMPL. BF869 BF871 PAGE .

ERB81-004 : . Low VF Super high speed switching High reliability by planer design Applications Item Repetitive peak reverse voltage Average forward current Surge current Operating junction temperature Storage temperature Symbol VRRM IF(AV) IFSM Tj Tstg Resistive load Tl=130C Sine wave 10ms Conditions Rating to +150 Unit A C Item Forward voltage drop Reverse current.

FA5314P : Bipolar ic For Switching Power Supply Control. The FA531X series are bipolar ICs for switching power supply control that can drive a power MOSFET. These ICs contain many functions in a small 8-pin package. With these ICs, a high-performance and compact power supply can be created because not many external discrete components are needed. Drive circuit for connecting a power MOSFET Wide operating.

IRCZ24 : Power MOSFET To-220 Hexsense. Dynamic dv/dt Rating Current Sense 175C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device, low on-resistance and cost-effectiveness. The HEXSence device provides an accurate fraction.

MSAGA11F120D : Insulated Gate Bipolar Transistor, Package : Die. 2830 S. Fairview Street Santa Ana, CA 92704 Phone: (714) 979-8220 Fax: (714) 559-5989 Fast IGBT Die for Implantable Cardio Defibrillator Applications N-Channel enhancement mode high density IGBT die Passivation: Polyimide, 20 um, over Silicon Nitride,.8um Emitter Metallization: Al/1%Si for aluminum wire bonding, 3.2 um typical. Collector/Gate Metallization:.

PBYL3020CT : . Low forward volt drop Fast switching Reverse surge capability High thermal cycling performance Low thermal resistance Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYL2525CT series is supplied in the SOT78 (TO220AB) conventional leaded package. The PBYL2525CTB series.

05002-750AMZB : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.000075 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 7.50E-5 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology.

FDD8424H_F085A : POWER, FET. These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench- process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Max rDS(on) 24m at VGS = 9.0A Max rDS(on) 30m at VGS 7.0A Q2: P-Channel Max rDS(on) 54m at VGS = -6.5A.

FHK7002 : 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 60 volts ; rDS(on): 7.5 ohms ; PD: 300 milliwatts ; Package Type: SOT23, SOT-23, 3 PIN ; Number of units in IC: 1.

SD160M0056B3F-0835 : CAP,AL2O3,56UF,160VDC,20% -TOL,20% +TOL. Operating Temperature Range ~ +105C Rated Voltage Range ~ 450V Rated Capacitance Range ~ 330F Capacitance Tolerance 120Hz, 20C Leakage Current (Max.) I 0.02CV+15A whichever is greater. (After Rated Voltage Applied for 5 Minutes) I = Leakage Current (A), C = Nominal Capacitance (F), V = Rated Voltage (V) Dissipation Factor (Max.) (tan) W V (V) : D.F.

SD553C30S50LPBF : 560 A, 3000 V, SILICON, RECTIFIER DIODE, DO-200AB. s: Configuration: Single ; Package: BPUK-2 ; Pin Count: 2 ; Number of Diodes: 1 ; IF: 560000 mA ; trr: 6 ns ; VRRM: 3000 volts ; RoHS Compliant: RoHS.

WL4-R005JI : RES,AXIAL,FILM,7M OHMS. s: Category / Application: General Use. Insulated body allows to be passed over s Insulated body allows WL4 to be circuiting Can be tape mounted for auto-insertion machines Removes the need for double sided PC be tape mounted auto-insertion s Can machines boards in some cases passed tracks without circuiting over short tracks without Removes the need for double sided PC boards in some cases.

1SMA4741-G-T1 : 11 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC. s: Diode Type: VOLTAGE REGULATOR DIODE ; RoHS Compliant: RoHS.

361R390M300HH0 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 300 V, 39 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 39 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 300 volts ; Leakage Current: 234 microamps ; ESR: 4250 milliohms ; Mounting Style: Through Hole ; Operating.

 
0-C     D-L     M-R     S-Z