|Category||RF & Microwaves|
|Description||RF Power Module For 218-250MHz, 7.0W FM Portable Radio|
|Company||Mitsubishi Electronics America, Inc.|
|Datasheet||Download M68779M datasheet
|Some Part number from the same manufacture Mitsubishi Electronics America, Inc.|
|M69897VP 2.488 GBPS Multiplexer|
|M69899VP 2.488 GBPS Demultiplexer|
|M6MBG166S4BWG CMOS 3.3V Only Flash Memory|
|M6MF16S2AVP 16,777,216-bit CMOS 3.3v-only Flash Memory & 2,097,152-bit CMOS SRAM Stacked-mcp (multi Chip Package)|
|M6MGB/T160S2BVP 16,777,216-bit CMOS 3.3v-only Flash Memory & 2,097,152-bit CMOS SRAM Stacked-mcp (multi Chip Package)|
|M6MGB/T160S4BVP 16,777,216-bit CMOS 3.3v-only Flash Memory & 4,194,304-bit CMOS SRAM Stacked-mcp (multi Chip Package)|
|M6MGB/T162S2BVP 16,777,216-bit CMOS 3.3v-only Flash Memory & 2,097,152-bit CMOS SRAM Stacked-mcp (multi Chip Package)|
|M6MGB/T162S4BVP 16,777,216-bit CMOS 3.3v-only Flash Memory & 4,194,304-bit CMOS SRAM Stacked-mcp (multi Chip Package)|
|M6MGB/T166S2BWG 16,777,216-bit CMOS 3.3v-only Flash Memory & 2,097,152-bit CMOS SRAM Stacked-csp (chip Scale Package)|
|M6MGB/T166S4BWG 16,777,216-bit CMOS 3.3v-only Flash Memory & 4,194,304-bit CMOS SRAM Stacked-csp (chip Scale Package)|
|M6MGB160S2BVP 16,777,216-bit (1048,576-word BY 16-bit) CMOS 3.3V-only, Block Erase Flash Memory|
|M6MGB160S4BVP 16777216-bit (1048576-word BY 16-bit) CMOS 3.3V-only Flash Memory|
|M6MGB166S2BWG CMOS 3.3V Only Flash Memory|
M38005E6-XXXHP : 8-bit Single-chip Microcomputer
M38198ED-XXXFP : RAM Size: 1536bytes; Single-chip 8-bit CMOS Microcomputer
M38206E7DXXXFS : RAM Size: 896 Bytes; Single-chip 8-bit CMOS Microcomputer
M38257EA-GP : RAM Size: 1024 Bytes; Single-chip 8-bit CMOS Microcomputer
M38257MBDXXXFS : RAM Size: 1024 Bytes; Single-chip 8-bit CMOS Microcomputer
M38863E9A-GP : RAM Size: 512bytes Single Chip 8-bit CMOS Microcomputer
RA30H2127M-E01 : Modules->VHF 50-300MHz/High Power
TM55DZ-H : Thyristor Module High Medium Power General Use Insulated Type
DSS-601MC22R : DIA Surge Suppressor (dss)
BX6521 : Frequency (MHz) = 5 - 500 ;; Gain (Typ/Min) (dB) = 30 / 28 ;; Noise Figure (Typ/Max) (dB) = 3 / 4 ;; P1dB Comp Point (Typ/Min) (dBm) = +9 / +7 ;; 3rd Order Intercept (Typ) (dBm) = +22 ;; 2nd Order Intercept (Typ) (dBm) = +30 ;; DC Power (Typ) (V/mA) = +15 / +36 ;; Package = Package = Package = 4 Pin TO-8 Package = Surface Mount Package = Flatpack Package.
BX9713 : Frequency (MHz) = 500 - 2000 ;; Gain (Typ/Min) (dB) = 11 / 8.5 ;; Noise Figure (Typ/Max) (dB) = 4.5 / 6 ;; P1dB Comp Point (Typ/Min) (dBm) = +21 / +19 ;; 3rd Order Intercept (Typ) (dBm) = +34 ;; 2nd Order Intercept (Typ) (dBm) = +44 ;; DC Power (Typ) (V/mA) = +15 / +100 ;; Package = Package = Package = 4 Pin TO-8 Package = Surface Mount Package = Flatpack.
D2054UK : Purchase Online = ;; Package = DBC4 ;; Impedance Calculator = ;; Operating Voltage (V) = 28 ;; Power Output (W) = 10 ;; Minimum Efficiency = 40 ;; Gain = 13 ;; Test Frequency (MHz) = 1000 ;; Configuration = Push-pull ;; Application Range = 1-1000MHz ;; Active Fet Configuration = 2+2 ;; BVDSS (V) = 65.
DMI-18A : Flange Mounted Double-balanced Mixer. This mixer is typically specified as a down converter. It also functions well an up converter, third harmonic mixer or phase detector. Parameter Operating Temp. Max. Storage Temp. Max. Humidity Vibration +125°C 95% non-condensing 7G's rms, to 2000 cps, per MIL-STD-810-B, Method 514, Procedure 5 RF Frequency Range (GHz) - 18.0 L-R Isolation (dB) 22 L-I Isolation.
HH-108 : High-Power Hybrid Junction Coupler. Dimensions ( ) are in mm. Unless Otherwise Noted:.xxx = ±0.015 (.x = ±0.4) Weight (Approx): 7 Ounces 198 Grams A MIL-STD-202 screening available. *All s apply with 50 ohm source and load impedance. HH-108 .
HMC400MS8 : High IP3, Sgl-end. +35 dBm Input IP3 Conversion Loss: dB No External Components Ultra Small MSOP Package: 14.8mm2 Typical Applications High Dynamic Range Infrastructure: GSM, GPRS & EDGE CDMA & W-CDMA Cable Modem Termination Systems The is a high dynamic range passive MMIC mixer in a plastic surface mount 8 lead Mini Small Outline Package (MSOP) covering to 2.2 GHz. Excellent.
PWD21 : Fixed TTL Pulse Width Discriminator.
TGA8014-SCC : = Power Amp ;; Freq(GHz) = 6.0 - 18 ;; Power(dBm) = 27 ;; Gain(dB) = 11 ;; Nf/pae = 8 DB ;; +V = 8 ;; IQ(mA) = 400 ;; Status = Standard Space.
HMC448LC3B : 9500 - 12500 MHz, Active X2, +11dBm Pout, -135 dBc/Hz Phase Noise The HMC448LC3B is a x2 active broadband frequency multiplier utilizing GaAs PHEMT technology in a leadless RoHS compliant SMT package. When driven by a 0 dBm signal, the multiplier provides +11 dBm typical output power from 22 to 25 GHz. The Fo and 3Fo isolations are >20 dBc up to 22 GHz.
RI-I16-114A-S1 : Texas Instruments Tag-it™ HF-I pro transponder inlays consist of 13.56-MHz high-frequency (HF) transponders that are compliant with the ISO/IEC 15693 and ISO/IEC 18000-3 global open standards. These products offer a user-accessible memory of 256 bits, organized in eight blocks, and an extended command set including password protect write available in five.
HMC392LC4 : GaAs PHEMT MMIC LOW NOISEc AMPLIFIER, 2 - 4 GHz The HMC609LC4 is a GaAs PHEMT MMIC Low Noise Amplifi er (LNA) which operates from 2 to 4 GHz. The HMC609LC4 extremely fl at performance characteristics including 20 dB of small signal gain, 3.5 dB of noise fi gure and output IP3 of +36.5 dBm across the operating band. This 50 Ohm matched amplifi er does.
DB-55008L-318 : RF Power RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs.
SKY18106 : SP8T Antenna Switch With GSM Transmit Filters The SKY18106 is a single-pole, eight-throw (SP8T) Front-End Module (FEM) switch designed for multi-mode, high-power switching applications that demand low harmonics and low insertion loss. The switch is optimized for both 2G GSM/EDGE and 3G WCDMA applications. No external blocking capacitors are required.
HMC721LP3E : 13 Gbps Fast Rise Time XOR / XNOR Gate W/Programmable Output Voltage The HMC721LP3E is a XOR/XNOR gate function designed to support data transmission rates of up to 13 Gbps, and clock frequencies as high as 13 GHz. The HMC721LP3E also an output level control pin, VR, which allows for loss compensation or for signal level optimization. All input signals.
BLF888A : UHF Power LDMOS Transistor A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications..
HMC935LP5E : 180Â° Analog Phase Shifter SMT, 2 - 20 GHz The HMC935LP5E is an Analog Phase Shifter which is controlled via an analog control voltage from 0.5 to +11V. The HMC935LP5E provides a continuously variable phase shift of 0 to 180 degrees from 2 to 20 GHz, with extremely consistent low insertion loss versus phase shift and frequency. The high accuracy HMC935LP5E.
RFG1M20090 : 1.8GHz To 2.2GHz 90W GaN Power Amplifier The RFG1M20090 is optimized for commercial infrastructure, military communication and general purpose amplifier applications in the 1.8GHz to 2.2GHz frequency band, ideal for constant envelope, pulsed and WCDMA and LTE applications. Using an advanced 48V high power density Gallium Nitride (GaN) semiconductor.