Details, datasheet, quote on part number: QM15TD-H
PartQM15TD-H
CategoryDiscrete => Transistors => Bipolar => Modules
TitleModules
DescriptionTransistor Module Medium Power Switching Use Insulated Type
CompanyMitsubishi Electronics America, Inc.
DatasheetDownload QM15TD-H datasheet
Quote
Find where to buy
 
  

 

Features, Applications

IC Collector current.......................... 15A VCEX Collector-emitter voltage........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271

APPLICATION Air conditioner, Small to medium size inverters, CVCF

Symbol VCEX (SUS) VCEX VCBO VEBO IC ­IC PC IB ­ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight

Conditions IC=1A, VEB=2V Emitter open Collector open DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings Charged part to case, AC for 1 minute Mounting screw M5 Typical value Unit °C V Nm kgcm g

Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) ­VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain

Limits Test conditions VEB=2V VCB=600V, Emitter open IB=0.2A ­IC=15A (diode forward voltage) IC=15A, VCE=2V/5V Min. IC=15A, IB1=­IB2=0.3A Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (per 1/6 module) Typ. Max. Unit V µs °C/ W °C/ W °C/ W

COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)

 

Some Part number from the same manufacture Mitsubishi Electronics America, Inc.
QM15TD-HB Transistor Module Medium Power Switching Use Insulated Type
QM15TG-9B Transistor Module, Medium Power Switching Use, Insulated Type: 500v, 15a
QM200DY-24 Transistor Module High Power Switching Use Insulated Type
QM200DY-24B
QM200DY-2H
QM200DY-2HB
QM200DY-HB
QM200HA-24
QM200HA-2H
QM200HA-HK
QM200HC-M Transistor Module High Power Switching Use Non-insulated Type
QM20DX-H Transistor Module Medium Power Switching Use Insulated Type
QM20KD-HB
QM20TD-H
QM20TD-HB
QM20TG-9B Transistor Module, Medium Power Switching Use, Insulated Type: 500v, 20a
QM300DY-24 300A - Transistor Module For Medium Power Switching Use, Insulated Type
QM300DY-24B
QM300DY-2H
QM300DY-2HB
QM300HA-24

M38000M4-XXXFP : 8-bit Single-chip Microcomputer

M38045F7-XXXHP : RAM Size: 768bytes Single Chip 8-bit CMOS Microcomputer

M38201E5DXXXFS : RAM Size: 256 Bytes; Single-chip 8-bit CMOS Microcomputer

M38202M3DXXXFP : RAM Size: 384 Bytes; Single-chip 8-bit CMOS Microcomputer

M38506ED-XXXFP : RAM Size:896 Bytes; Single-chip 8-bit Microcomputer

M38749EAT-XXXFS : Single-chip 8-bit CMOS Microcomputer

M38864M5A-XXXGP : RAM Size: 640bytes Single Chip 8-bit CMOS Microcomputer

M38B45M1H-XXXXFP : Single-chip 8-bit CMOS Microcomputer

M67749UHR : RF Power Module For 470-490MHz, 12.5V, 7W FM Portable Radio

CM200HG-130H : 200 A, 6300 V, N-CHANNEL IGBT Specifications: Polarity: N-Channel ; Package Type: MODULE-5 ; Number of units in IC: 1

Same catergory

APT20M36BLL : . Power MOS is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal.

APT8020LLL : 800V, 38A Power MOS 7 Transistor. Power MOS is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal.

BUK138-50DL : BUK138-50DL; Logic Level TopFET D-pak Version of BUK117-50DL. Monolithic temperature and overload protected logic level power MOSFET in TOPFET2 technology assembled a 3 pin surface mount plastic package. SYMBOL VDS PD Tj RDS(ON) IISL PARAMETER Continuous drain source voltage Continuous drain current Total power dissipation Continuous junction temperature Drain-source on-state resistance Input supply current VIS 5 V MAX.

BY229 : Fast Switching Plastic Rectifier. Plastic package has Underwriters Laboratories Flammability Classification 94V-0 Glass passivated chip junction Low leakage, high voltage High surge current capability Superfast recovery time, for high efficiency High temperature soldering guaranteed: 0.25" (6.35mm) from case for 10 seconds Case: JEDEC TO-220AC, ITO-220AC and TO-263AB plastic body over.

KSB1116 : PNP Epitaxial Silicon Transistor. Audio Frequency Power Amplifier & Medium Speed Switching Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Collector Power Dissipation Junction Temperature Storage Temperature.

LCA126 : Single Pole Optomos Relay, 250V. Small 6 Pin DIP Package Low Drive Power Requirements (TTL/CMOS Compatible) No Moving Parts High Reliability Arc-Free With No Snubbing Circuits 3750VRMS Input/Output Isolation FCC Compatible VDE Compatible No EMI/RFI Generation Machine Insertable, Wave Solderable Surface Mount and Tape & Reel Versions Available Approvals UL Recognized: File Number E76270.

T2156N : SCR / Diode Presspacks. Periodische Vorwärts- und RückwärtsSpitzensperrspannung Vorwärts-Stoßspitzensperrspannung Rückwärts-Stoßspitzensperrspannung Durchlaßstrom-Grenzeffektivwert Dauergrenzstrom Stoßstrom-Grenzwert Grenzlastintegral Kritische Stromsteilheit Kritische Spannungssteilheit repetitive peak forward off-state and reverse voltages non-repetitive peak forward off-state.

BUK714R1-40BT : Trenchmos (tm) standard level FET N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOSTM technology. The devices include TrenchPLUS diodes for over-temperature protection. Product availability: BUK714R1-40BT in SOT426 (D2-PAK) BUK794R1-40BT in SOT263B (TO-220AB). Integrated.

IXFB80N50Q2 : High Current MOSFETs with Double Metal Gate Construction * Vdss up to 1000V * Avalanche energy and current rated * Double metal gate construction for exceptionally fast switching * Low Rds(on) with low gate charge & juntion capacitances.

MRF21085LSR3 : 2170 MHz, 90 W, 28 V Lateral N–Channel RF Power MOSFET The MRF21085LSR3 is designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications..

A139R1F0.07 : RES NET,THICK FILM,9.1 OHMS,200WV,1% +/-TOL,-250,250PPM TC,9012 CASE. s: Configuration: Chip Array ; Category / Application: General Use.

FR6J-TP : 6 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AB. s: Package: PLASTIC, HSMC, 2 PIN ; Number of Diodes: 1 ; VRRM: 600 volts ; IF: 6000 mA ; trr: 0.2500 ns ; RoHS Compliant: RoHS.

NRWS153M10V18X36TBF : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 10 V, 15000 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; : Polarized ; Capacitance Range: 15000 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 10 volts ; Leakage Current: 1500 microamps ; Mounting Style: Through Hole ; Operating Temperature: -55 to 105 C (-67 to 221 F).

S9G09A : RF POWER, FET. s: Package Type: HERMETIC SEALED, 2-16G6A, 3 PIN.

SF32N035TBK : RESISTOR, TEMPERATURE DEPENDENT, PTC RESETTABLE FUSE, 1.03 ohm, SURFACE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP, 1210, ROHS COMPLIANT ; Resistance Range: 1.03 ohms ; Power Rating: 0.5000 watts (6.70E-4 HP) ; Operating Temperature: -40 to 85 C (-40 to 185 F).

TAZA104M050LSS9023 : CAPACITOR, TANTALUM, SOLID, POLARIZED, 50 V, 0.1 uF, SURFACE MOUNT. s: Configuration / Form Factor: Chip Capacitor ; Applications: General Purpose ; Electrolytic Capacitors: Tantalum ; : Polarized ; Capacitance Range: 0.1000 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 50 volts ; Mounting Style: Surface Mount Technology ; Operating Temperature:.

1VZL1000MCA12.5X25 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 35 V, 1000 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 1000 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 35 volts ; Leakage Current: 350 microamps ; Mounting Style: Through Hole ; Operating Temperature:.

2N5336CECC-A : 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-39. s: Polarity: NPN ; Package Type: TO-3, TO-39, TO-39, 3 PIN.

50800R : TELECOM TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Telecom ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F).

 
0-C     D-L     M-R     S-Z