Details, datasheet, quote on part number: QM200DY-HB
PartQM200DY-HB
CategoryDiscrete => Transistors => Bipolar => Modules
TitleModules
DescriptionTransistor Module High Power Switching Use Insulated Type
CompanyMitsubishi Electronics America, Inc.
DatasheetDownload QM200DY-HB datasheet
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Features, Applications

IC Collector current........................ 200A VCEX Collector-emitter voltage........... 600V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271

APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders

Symbol VCEX (SUS) VCEX VCBO VEBO IC ­IC PC IB ­ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage

Conditions IC=1A, VEB=2V Emitter open Collector open DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings Charged part to case, AC for 1 minute Main terminal screw M6 Unit °C V Nm kgcm Nm kgcm g

Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) ­VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain

Limits Test conditions VEB=2V VCB=600V, Emitter open IB=260A ­IC=200A (diode forward voltage) IC=200A, VCE=2.5V Min. IB1=400mA, ­IB2=4A Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) Typ. Max. Unit V µs °C/ W °C/ W °C/ W



 

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