Details, datasheet, quote on part number: QM20DX-H
CategoryDiscrete => Transistors => Bipolar => Modules
DescriptionTransistor Module Medium Power Switching Use Insulated Type
CompanyMitsubishi Electronics America, Inc.
DatasheetDownload QM20DX-H datasheet
Find where to buy


Features, Applications

IC Collector current.......................... 20A VCEX Collector-emitter voltage........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271

APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders

Symbol VCEX (SUS) VCEX VCBO VEBO IC ­IC PC IB ­ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight

Conditions IC=1A, VEB=2V Emitter open Collector open DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings Charged part to case, AC for 1 minute Mounting screw M5 Typical value Unit °C V Nm kgcm g

Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) ­VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain

Limits Test conditions VEB=2V VCB=600V, Emitter open IB=0.28A ­IC=20A (diode forward voltage) IC=20A, VCE=2V/5V Min. IC=20A, IB1=­IB2=0.4A Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) Typ. Max. Unit V µs °C/ W °C/ W °C/ W



Some Part number from the same manufacture Mitsubishi Electronics America, Inc.
QM20KD-HB Transistor Module Medium Power Switching Use Insulated Type
QM20TG-9B Transistor Module, Medium Power Switching Use, Insulated Type: 500v, 20a
QM300DY-24 300A - Transistor Module For Medium Power Switching Use, Insulated Type
QM300HC-M 300A - Transistor Module For Medium Power Switching Use, Non-insulated Type
QM30CY-H Transistor Module Medium Power Switching Use Insulated Type
QM30E2Y Medium Power Switching Use Insulated Type
QM30E2Y-2H Transistor Module Medium Power Switching Use Insulated Type

M38023M1DXXXFP : RAM Size: 512bytes; Single-chip 8-bit CMOS Microcomputer

M38030F2-HP : RAM Size: 192bytes; Single-chip 8-bit CMOS Microcomputer

M38034F6-FP : RAM Size: 640bytes; Single-chip 8-bit CMOS Microcomputer

M38042MD-XXXHP : RAM Size: 384bytes Single Chip 8-bit CMOS Microcomputer

M38270M7-XXXGP : Single-chip 8-bit CMOS Microcomputer

M38747EDF-XXXGP : Single-chip 8-bit CMOS Microcomputer

M38866M6A-XXXGP : RAM Size: 896bytes Single Chip 8-bit CMOS Microcomputer

M38868E5A-HP : RAM Size: 1536bytes Single Chip 8-bit CMOS Microcomputer

M54477L :

FU-68SDF-W10M9F : 1.55 um Dfb-ld Module WITH Singlemode Fiber Pigtail

Same catergory

2SC3678 : Amplifier. Silicon NPN Triple Diffused Planar Transistor. Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO PC Tj Tstg to +150 Unit °C Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions 6typ 50typ B =5) Collector-Emitter Saturation Voltage C E (sa (V ) Base-Emitter Saturation Voltage E (s at) (V) 1 Without.

2SD1236 : . Applications Large current switching of relay drivers, high-speed inverters, converters. Low collector-to-emitter saturation voltage : VCE(sat)=-0.5V (PNP), 0.4V (NPN) max. Large current capacity. s Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation.

2SK3305-ZJ : Switching N-channel Power MOSFET Industrial Use. The 2SK3305 is N-Channel DMOS FET device that a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. Low gate charge: 13 nC TYP. (VDD 400 V, VGS = 5.0 A) Gate voltage rating: ±30 V Low on-state resistance RDS(on) = 1.5 MAX. (VGS = 2.5 A) Avalanche capability ratings.

BC856BWT1 : General Purpose Transistors , Package: SC-70 (SOT-323), Pins=3. These transistors are designed for general purpose amplifier applications. They are housed in the SOT­323/SC­70 which is designed for low power surface mount applications. Device Marking: = 3K Rating Collector­Emitter Voltage Collector­Base Voltage Emitter­Base Voltage Collector Current ­ Continuous Symbol VCEO VCBO VEBO BC857 BC858 Unit V mAdc See Device.

C10T03QL-11A : Device = SBD ;; Ripetitive Peak Reverse Voltage(V) = 30 ;; Average Rectified Current(A) = 10 ;; Condition(cace or Ambient Temperature) = Tc=116 ;; Surge Forward Current(A) = 120 ;; Maximam Operating Junction Temperature( C ) = 150 ;; Storage Temperature( C ) = -40 to 150 ;; Peak Forward Voltage(V) = 0.47 ;; Peak Forward Current(A) = 5 ;; Peak Reverse.

FE6A : Glass Passivated. Glass Passivated Fast Efficient Rectifier Reverse Voltage - 50 to 200volts Forward Current - 6.0 Amperes.

HER306 : High efficiency rectifier diodes. High Efficiency Rectifier Diodes.

KN2907 : = General Purpose Transistor ;; Package = TO-92.

OM400L60CMC : 600V 400A Chopper Hi-rel Cermod Igbt Power Module. OM400L60CMC (Tc= 25° C unless otherwise specified) Symbol Min. Typ. Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, VCE=0V Zero Gate Voltage Drain Current, VGE=0, VCE =600V Gate Emitter Leakage Current, VCE=0V ON CHARACTERISTICS Gate Threshold Voltage, VCE=VGE, IC=6mA Collector Emitter Saturation Voltage, VGE=15V, IC=400A DYNAMIC CHARACTERISTICS.

SML30EUZ03K : Screening Options Available = ;; Package = D2PAK (TO263AB) ;; Type = C3 Enhanced Ultrafast Diode ;; Voltage (V) = 300V ;; Current (A) = 30A ;; VF(cont) = 1.8V ;; Trr(typ) = 35ns.

B4S-E3 : 0.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE, TO-269AA. s: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 30000 mA ; RoHS Compliant: RoHS ; Package: LEAD FREE, MINIATURE, PLASTIC, MBS, 4 PIN ; Pin Count: 4 ; Number of Diodes: 4.

EVU : RESISTOR, POTENTIOMETER, 1 TURN(S), 0.05 W, 1000 ohm - 2000000 ohm. s: Potentiometer Type: Standard Potentiometer ; Mounting / Packaging: ThroughHole ; Operating Temperature: 0 to 70 C (32 to 158 F).

UMN11TN : 0.1 A, 4 ELEMENT, SILICON, SIGNAL DIODE. s: Arrangement: Common Catode ; Diode Type: General Purpose ; IF: 100 mA ; RoHS Compliant: RoHS ; Pin Count: 6 ; Number of Diodes: 4.

1SS304-A : 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE. s: Arrangement: Common Catode ; Diode Type: General Purpose ; IF: 100 mA ; RoHS Compliant: RoHS ; Pin Count: 3 ; Number of Diodes: 2.

6.3NW72220FA5X7 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, NON-POLARIZED, 6.3 V, 22 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Capacitance Range: 22 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 6.3 volts ; Leakage Current: 10 microamps ; Mounting Style: Through Hole ; Operating Temperature: -40 to 85 C (-40 to 185 F).

0-C     D-L     M-R     S-Z