Details, datasheet, quote on part number: QM20KD-HB
PartQM20KD-HB
CategoryDiscrete => Transistors => Bipolar => Modules
TitleModules
DescriptionTransistor Module Medium Power Switching Use Insulated Type
CompanyMitsubishi Electronics America, Inc.
DatasheetDownload QM20KD-HB datasheet
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Features, Applications

IC Collector current.......................... 20A VCEX Collector-emitter voltage........... 600V hFE DC current gain............................. 250 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271

APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders.

Symbol VCEX (SUS) VCEX VCBO VEBO IC IC PC IB ICSM Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current)

Conditions IC=1A, VEB=2V Emitter open Collector open DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings Unit

Symbol VRRM VRSM Ea IO IFSM I2t Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Recommended AC input voltage DC output current Surge (non-repetitive) forward current I2t for fusing

Conditions Ratings 900 220 Three phase full wave rectifying circuit, Tc=79C One half cycle at 60 Hz, peak value Value for one cycle of surge current 300 375 Unit A2s

Symbol Tj Tstg Viso Parameter Junction temperature Storage temperature Isolation voltage Mounting torque Weight

Conditions Ratings 40~150 40~125 Charged part to case, AC for 1 minute Mounting screw M5 Typical value Unit C V Nm kgcm g

Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain

Test conditions VEB=2V VCB=600V, Emitter open IB=80mA IC=20A (diode forward voltage) IC=20A, VCE=2V Limits Min. IC=20A, IB1=120mA,IB2=0.4A Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied Typ. Max. Unit V s C/ W C/ W C/ W

Symbol IRRM VFM Rth (j-c) Rth (c-f) Parameter Repetitive peak reverse current Forward voltage Thermal resistance Contact thermal resistance

Test conditions VR=VRRM, Tj=150C IF=30A Junction to case Case to fin, conductive grease applied Limits Min. Typ. Max. Unit mA V C/ W C/ W

COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 50 COLLECTOR CURRENT IC (A) IB=20mA DC CURRENT GAIN hFE VCE=5.0V DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)

COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 ton, ts, tf (s) 4 IC=25A


 

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