Details, datasheet, quote on part number: QM30E2Y/E3Y-2H
CategoryDiscrete => Thyristors
CompanyMitsubishi Electronics America, Inc.
DatasheetDownload QM30E2Y/E3Y-2H datasheet
Find where to buy


Features, Applications

IC Collector current.......................... 30A VCEX Collector-emitter voltage......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271

Symbol VCEX (SUS) VCEX VCBO VEBO IC ­IC PC IB ­ICSM Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current)

Conditions IC=1A, VEB=2V Emitter open Collector open DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings Unit

Symbol VRRM VRSM VR (DC) IDC IFSM I2t Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage DC current Surge (non-repetitive) forward current I2t for fusing

Conditions Ratings 800 DC circuit, resistive, inductive load Peak value of one cycle of 60Hz (half wave) Value for one cycle of surge current Unit A2s

Symbol Tj Tstg Viso Parameter Junction temperature Storage temperature Isolation voltage

Conditions Ratings ­40~+150 ­40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 Unit °C V Nm kgcm Nm kgcm g

Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) ­VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain

Limits Test conditions VEB=2V VCB=1000V, Emitter open IB=0.6A ­IC=30A (diode forward voltage) IC=30A, VCE=2.8V/5V Min. IC=30A, IB1=­IB2=0.6A Transistor part Diode part Conductive grease applied Typ. Max. Unit V µs °C/ W °C/ W °C/ W

Symbol IRRM VFM trr Qrr Rth (j-c) Rth (c-f) Parameter Repetitive peak reverse current Forward voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance

Test conditions VR=VRRM, VR=600V, Tj=150°C Junction to case Conductive grease applied (case to fin) Limits Min. Typ. Max. Unit µs µC °C/ W °C/ W


Some Part number from the same manufacture Mitsubishi Electronics America, Inc.
QM30E3Y-2H Transistor Module Medium Power Switching Use Insulated Type
QM30HC-2H Transistor Module Induction Heater Use Non-insulated Type
QM30HQ-24 Transistor Module Drive Use For High Power Transistor Insulated Type
QM30HY-2H Transistor Module Medium Power Switching Use Insulated Type
QM400HA-24 400A - Transistor Module For Medium Power Switching Use, Insulated Type

FU-630SLD-8M1 : Laser Module->Consumer 1.48m Pump LD Module With Singlemode Fiber (EDFA)

M38062E76AXXXFS : RAM Size: 384bytes; Single-chip 8-bit CMOS Microcomputer

M38227M2HXXXFS : RAM Size: 1024 Bytes; Single-chip 8-bit CMOS Microcomputer

M38506EDH-SS : RAM Size:896 Bytes; Single-chip 8-bit CMOS Microcomputer

M38862E7A-GP : RAM Size: 384bytes Single Chip 8-bit CMOS Microcomputer

M38863M9A-XXXFS : RAM Size: 512bytes Single Chip 8-bit CMOS Microcomputer

M54939 :

PS21964-ST : 600v/15a Low-loss 5th Generation IGBT Inverter Bridge for Three Phase Dc-to-ac Power Conversion

Same catergory

APT6029SLL : 600V, 21A Power MOS 7 Transistor. Power MOS is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal.

BR3500 : 50 V, 35 a Silicon Bridge Rectifier. High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board * Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation * Epoxy : UL94V-O rate flame retardant * Terminals plated.25" (6.35 mm). Faston * Polarity : Polarity symbols marked on case.

FPIR3205 : . INTEGRALLY MOLDED HEAT SINKS PROVIDE VERY LOW THERMAL RESISTANCE This mark indicates recognition under the component program of Underwriters Laboratories, inc. Our unique case construction enables the closer molding of integrated heat sink to the active components for a superior thermal transfer and lower junction temperatures. Average Output Current,.

FQPF5N60 : 600V N-channel QFET. These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices.

MA4P1250 : Surface Mount Pin Diodes. Non-Rollable MELF Design Hermetically Sealed Low Loss, Low Distortion Passivated PIN Diode Chips Full Face Chip Bonds Non-Magnetic Package Pick and Place Compatibility Size, Inches (mm) Model No. MA4P1250 MA4P1450 Case Style 1072 1091 A(sq.) Min./Max. B Min./Max. C Min./Max. 0.008/0.030 (0.203/0.762) The MA4P1250 and MA4P1450 are square surface mountable.

MPS4126 : Small Signal General Purpose Pnp, Package: TO-92 (TO-226), Pins=3. Rating Collector­Emitter Voltage Collector­Base Voltage Emitter­Base Voltage Collector Current Continuous Total Power Dissipation = 25°C Derate above 25°C Total Power Dissipation = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCE VCB VEB IC PD TJ, Tstg Value to +150 Unit Vdc mAdc mW mW/°C W mW/°C °C Characteristic Thermal.

AP30N30WI : 30 A, 250 V, 0.068 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 250 volts ; rDS(on): 0.0680 ohms ; Package Type: TO-3, ROHS COMPLIANT, TO-3PF, FULL PACK-3 ; Number of units in IC: 1.


EEUFM0J151(B) : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 6.3 V, 150 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 150 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 6.3 volts ; Leakage Current: 9.45 microamps ; Mounting Style: Through Hole ; Operating Temperature:.

ESR18EZPD1000 : RESISTOR, METAL GLAZE/THICK FILM, 0.33 W, 0.5 %, 100 ppm, 100 ohm, SURFACE MOUNT, 1206. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 1206, CHIP ; Resistance Range: 100 ohms ; Tolerance: 0.5000 +/- % ; Temperature Coefficient: 100 ±ppm/°C ; Power.

FRN015 : RESISTOR, FUSIBLE, FILM, 1.5 W, 2; 5; 10 %, 350 ppm, 0.3 ohm - 10000 ohm, THROUGH HOLE MOUNT. s: Category / Application: Fusible Resistor, General Use ; Technology / Construction: MetalFilm ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED, ROHS COMPLIANT ; Operating Temperature: -55 to 155 C (-67 to 311 F) ; Standards and Certifications:.

IXFL132N50P3 : 63 A, 500 V, 0.043 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 500 volts ; rDS(on): 0.0430 ohms ; Package Type: PLASTIC, ISOPLUS264, 3 PIN ; Number of units in IC: 1.

PD0070WE80133BJ1 : CAPACITOR, CERAMIC, 0.0008 uF, CHASSIS MOUNT. s: Dielectric: Ceramic Composition ; Capacitance Range: 8.00E-4 microF ; Capacitance Tolerance: 5 (+/- %) ; Mounting Style: CHASSIS MOUNT ; Operating Temperature: -67 to 212 F (218 to 373 K).

ROX05G100K : RESISTOR, METAL OXIDE FILM, 0.5 W, 2 %, 300 ppm, 100000 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Technology / Construction: MetalOxide ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Resistance Range: 100000 ohms ; Tolerance: 2 +/- % ; Temperature Coefficient: 300 ±ppm/°C ; Power Rating: 0.5000 watts (6.70E-4.

SIL525-101 : 1 ELEMENT, 100 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: WRAPAROUND ; Molded / Shielded: Shielded ; Application: General Purpose, Power Choke ; Inductance Range: 100 microH ; Rated DC Current: 320 milliamps.

12P : RESISTOR, POTENTIOMETER, CONDUCTIVE PLASTIC, 1 TURN(S), 0.125; 0.25 W, 1000 ohm - 1000000 ohm. s: Potentiometer Type: Standard Potentiometer ; Mounting / Packaging: Panel Mount (Bushing), ThroughHole.


0-C     D-L     M-R     S-Z