Details, datasheet, quote on part number: QM30HY-2H
PartQM30HY-2H
CategoryDiscrete => Transistors => Bipolar => Modules
TitleModules
DescriptionTransistor Module Medium Power Switching Use Insulated Type
CompanyMitsubishi Electronics America, Inc.
DatasheetDownload QM30HY-2H datasheet
Quote
Find where to buy
 
  

 

Features, Applications

IC Collector current.......................... 30A VCEX Collector-emitter voltage......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271

APPLICATION Inverters, Servo drives, UPS, DC motor controllers, NC equipment

Symbol VCEX (SUS) VCEX VCBO VEBO IC IC PC IB ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage

Conditions IC=1A, VEB=2V Emitter open Collector open DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings Charged part to case, AC for 1 minute Main terminal screw M5 Unit C V Nm kgcm Nm kgcm g

Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain

Limits Test conditions VEB=2V VCB=1000V, Emitter open IB=0.6A IC=30A (diode forward voltage) IC=30A, VCE=2.8V/5V Min. IC=30A, IB1=IB2=0.6A Transistor part Diode part Conductive grease applied Typ. Max. Unit V s C/ W C/ W C/ W


COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)

 

Some Part number from the same manufacture Mitsubishi Electronics America, Inc.
QM30TB-24 Transistor Module Medium Power Switching Use Insulated Type
QM30TB-24B
QM30TB-2H
QM30TB-2HB
QM30TF-HB
QM30TX-H
QM30TX-HB
QM400HA-24 400A - Transistor Module For Medium Power Switching Use, Insulated Type
QM400HA-24B
QM400HA-2H
QM400HA-2HB
QM400HA-H
QM400HA-M
QM500HA-H 500A - Transistor Module For Medium Power Switching Use, Insulated Type
QM50CY-H Transistor Module Medium Power Switching Use Insulated Type
QM50DY-24
QM50DY-24B
QM50DY-2H
QM50DY-H
QM50DY-HB
QM50E2Y Medium Power Switching Use Insulated Type

M30621MCM-F546GP : M16C Family->M16C/60 Series Single-chip 16-bit CMOS Microcomputer

M38075EF-XXXFP : RAM Size: 768bytes; Single-chip 8-bit CMOS Microcomputer

M38226E4-HP : RAM Size: 896 Bytes; Single-chip 8-bit CMOS Microcomputer

M38274M6-XXXFP : Single-chip 8-bit CMOS Microcomputer

M38748MCD-XXXGP : Single-chip 8-bit CMOS Microcomputer

M51953BL :

M5M44800CTP-5 : Fast Page Mode 4194304-bit ( 524288-word BY 8-bit ) Dynamic RAM

M62494 : Audio SRS 3d Stereo + SRS 3d Mono 1chip

MF-27WXE-M11ZA630 : 100mbps-2.7gbps, Multi-rate DWDM SFP Transceiver Module

Same catergory

2C2222A : Chip Type 2c2222a Geometry 0400 Polarity NPN. Chip type 2C2222A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applications. : Medium power ratings Metallization Bonding Pad Size Die Thickness Chip Area Top Surface Top Backside Emitter Base 24 k min. 6.5 k nom. 4.0 mils x 4.0 mils 4.0 mils.

2N7002 : N-channel Enhancement Mode Field Effect Transistor. / NDS7002A N-Channel Enhancement Mode Field Effect Transistor These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most.

2SA1428 : Transistor ( Power Amplifier, Switching Applications ).

DFA100BA160 : Three Phase Diodes + Thyristors. SanRex Power Module, DFA100BA, is complex isolated module which is designed for rash current circuit. It contains six diodes connected in a three phase bridge configuration, and a thyristor connected to a direct current line. This Module is designed very compactly. Because diode module and thyristor put together. This Module is also isolated type between.

FDR836P : Logic Level. P-channel Logic-level Enhancement Mode Field Effect Transistor Not Recommended For New Designs.

IMB7A : . ! 1) Two DTA143T chips in a SMT package. !External dimensions (Units : mm) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO Pc Tj Tstg Limits 150 -55~+150 Unit mW C Type Package Marking Code Basic ordering unit.

PBSS5350D : PBSS5350D; 50 V Low Vcesat PNP Transistor;; Package: SOT457 (TSOP6, SMT6, SSOT6).

PBLS6005D : 60 V PNP BISS loadswitch PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package. Low VCEsat (BISS) transistor and resistor-equipped transistor in one package Low threshold voltage (< 1 V) compared to MOSFET Low drive power required.

0805ZC184JAT4A : CAPACITOR, CERAMIC, MULTILAYER, 10 V, X7R, 0.18 uF, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 0.1800 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 10 volts ; Mounting Style:.

08B01V1T36-F : DATACOM TRANSFORMER FOR. s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER.

AVS10CB/F2 : 600 V, 8 A, TRIAC, TO-220. s: Thyristor Type: Triac ; Package Type: TO-220, TO-220, 3 PIN ; Pin Count: 3 ; VDRM: 600 volts ; IT(RMS): 8 amps.

IRFZ42FI : 27 A, 50 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 50 volts ; rDS(on): 0.0350 ohms ; Package Type: TO-220, TO-220, 3 PIN ; Number of units in IC: 1.

NP90N04MUG : 90 A, 40 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 40 volts ; rDS(on): 0.0030 ohms ; PD: 1800 milliwatts ; Package Type: TO-220, MP-25K, TO-220, 3 PIN ; Number of units in IC: 1.

PBSS2540F,115 : 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: NPN ; Package Type: PLASTIC, SMD, SC-89, 3 PIN.

UT3055G-TM3-T : 12 A, 25 V, 0.095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 25 volts ; rDS(on): 0.0950 ohms ; Package Type: HALOGEN FREE PACKAGE-3 ; Number of units in IC: 1.

2N2412BXG4 : 100 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-206AA. s: Polarity: PNP ; Package Type: HERMETIC SEALED, METAL, TO-18, 3 PIN.

601D107F150FL1 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 150 V, 100 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; : Polarized ; Capacitance Range: 100 microF ; Capacitance Tolerance: 50 (+/- %) ; WVDC: 150 volts ; Leakage Current: 61.24 microamps ; ESR: 1114 milliohms ; Mounting Style: Through Hole ; Operating Temperature:.

 
0-C     D-L     M-R     S-Z