Details, datasheet, quote on part number: QM30TB-2H
PartQM30TB-2H
CategoryDiscrete => Transistors => Bipolar => Modules
TitleModules
DescriptionTransistor Module Medium Power Switching Use Insulated Type
CompanyMitsubishi Electronics America, Inc.
DatasheetDownload QM30TB-2H datasheet
Quote
Find where to buy
 
  

 

Features, Applications

IC Collector current.......................... 30A VCEX Collector-emitter voltage......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271

APPLICATION AC motor controllers, DC motor controllers, NC equipment

Symbol VCEX (SUS) VCEX VCBO VEBO IC ­IC PC IB ­ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight

Conditions IC=1A, VEB=2V Emitter open Collector open DC (forward diode current) TC=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings Charged part to case, AC for 1 minute Mounting screw M5 Typical value Unit °C V Nm kgcm g

Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) ­VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain

Limits Test conditions VEB=2V VCB=1000V, Emitter open IB=0.6A ­IC=30A (diode forward voltage) IC=30A, VCE=2.8V/5V Min. IC=30A, IB1=­IB2=0.6A Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (per 1/6 module) Typ. Max. Unit V µs °C/ W °C/ W °C/ W


COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)

 

Some Part number from the same manufacture Mitsubishi Electronics America, Inc.
QM30TB-2HB Transistor Module Medium Power Switching Use Insulated Type
QM30TF-HB
QM30TX-H
QM30TX-HB
QM400HA-24 400A - Transistor Module For Medium Power Switching Use, Insulated Type
QM400HA-24B
QM400HA-2H
QM400HA-2HB
QM400HA-H
QM400HA-M
QM500HA-H 500A - Transistor Module For Medium Power Switching Use, Insulated Type
QM50CY-H Transistor Module Medium Power Switching Use Insulated Type
QM50DY-24
QM50DY-24B
QM50DY-2H
QM50DY-H
QM50DY-HB
QM50E2Y Medium Power Switching Use Insulated Type
QM50E2Y-2H Transistor Module Medium Power Switching Use Insulated
QM50E2Y-H Transistor Module Medium Power Switching Use Insulated Type
QM50E2Y/E3Y-2H

M30622M4-115FP : Single-chip 16-bit CMOS Microcomputer

M30624FGFP : M16C Family->M16C/60 Series Single-chip 16-bit CMOS Microcomputer

M37280MK-103SP : Single-chip 8-bit CMOS Microcomputer With Closed Caption Decoder And On-screen Display Controller

M38027E8-XXXSP : RAM Size: 1024bytes; Single-chip 8-bit CMOS Microcomputer

M38207M5-XXXHP : RAM Size: 1024 Bytes; Single-chip 8-bit CMOS Microcomputer

M38505F8H-XXXFP : RAM Size:768 Bytes; Single-chip 8-bit CMOS Microcomputer

M38860MEA-XXXHP : RAM Size: 192bytes Single Chip 8-bit CMOS Microcomputer

M5M5256DFP-45LL-W : Lsis: 262144-bit (32768-word BY 8-bit) CMOS Static RAM

M5M5V408BTP-85L : 4194304-bit (524288-word BY 8-bit) CMOS Static RAM

MH16S72PHB-8 : Lsis: 1207959552-bit (16777216 - Word BY 72-bit) Synchronousdram

MH8S64BBKG-7L :

Same catergory

2SC4923 : NPN Triple Diffused Planar Silicon Transistor, Very High-definition CTR Display Horizontal Deflection Output Application.

2SK3380 : Power Small Signal Switching MOSFET. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.

CM200HA-24H : Igbt Modules High Power Switching Use Insulated Type. : Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. : Low Drive Power.

DSEI2x30-10R : . TVJ = TVJM = 50°C; rectangular, < 10 ms; rep. rating, pulse width limited by TVJM TVJ ms (50 Hz), sine ms (60 Hz), sine TVJ ms (50 Hz), sine ms (60 Hz), sine I2t TVJ ms (50 Hz), sine ms (60 Hz), sine TVJ ms (50 Hz), sine ms (60 Hz), sine TVJ TVJM Tstg Ptot VISOL Md Weight Symbol IR Test Conditions TVJ = 25°C TVJ = 25°C TVJ VR = VRRM = 0.8 VRRM = 0.8 VRRM.

FSF05A60B : Device = FRD ;; Ripetitive Peak Reverse Voltage(V) = 600 ;; Average Rectified Current(A) = 5 ;; Condition(cace or Ambient Temperature) = Tc=107 ;; Surge Forward Current(A) = 80 ;; Maximam Operating Junction Temperature( C ) = 150 ;; Storage Temperature( C ) = -40 to 150 ;; Peak Forward Voltage(V) = 1.7 ;; Peak Forward Current(A) = 5 ;; Peak Reverse.

HTT1132E : Twin-type Small Signal Bip-TRSs for High Frequency. Include 2 transistors in a small size SMD package: EMFPAK­6 (6 Leads: x 0.5 mm) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO PC Tj Tstg Q1 Total +150 Q2 Total to +150 Unit mW °C Item Collector to base.

M1FE40 : General Purpose Rectifiers/ Single (Surface Mount). Absolute Maximum Ratings (If not specified Tl=25) Item Symbol Storage Temperature Tstg Tj Operating Junction Temperature Maximum Reverse Voltage VRM Average Rectified Forward Current IO 50Hz sine wave, R-load 50Hz sine wave, R-load Peak Surge Forward Current 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25 Electrical Characteristics (If not specified.

SBG1030CT : 5 to 100 Amp. 10A Surface Mount Schottky Barrier Rectifier.

BCR12CM-16LHB00 : 800 V, 12 A, TRIAC, TO-220AB. s: Thyristor Type: Triac ; Package Type: TO-220, SC-46, TO-220, 3 PIN ; Pin Count: 3 ; VDRM: 800 volts ; IT(RMS): 12 amps.

BYT51K-TAP : 1 A, 800 V, SILICON, SIGNAL DIODE. s: Package: ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 ; Number of Diodes: 1 ; IF: 1000 mA ; RoHS Compliant: RoHS.

ELZA100ELL102MJC5S : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 10 V, 1000 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; : Polarized ; Capacitance Range: 1000 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 10 volts ; Leakage Current: 100 microamps ; Mounting Style: Through Hole ; Operating Temperature: -55 to 105 C (-67 to 221 F).

MY100 : 25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE. s: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 150000 mA ; Pin Count: 4 ; Number of Diodes: 4.

NMC-H1812NPO331G1000TRPLPF : CAPACITOR, CERAMIC, MULTILAYER, 1000 V, C0G, 0.00033 uF, SURFACE MOUNT, 1812. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 3.30E-4 microF ; Capacitance Tolerance: 2 (+/- %) ; WVDC: 1000 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style:.

PUMB19/T1 : 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: PLASTIC, SMD, SC-88, 6 PIN.

SHD120134D : 7.5 A, SILICON, RECTIFIER DIODE. s: Arrangement: Common Anode ; Diode Type: RECTIFIER DIODE ; Diode Applications: Rectifier, EFFICIENCY ; IF: 7500 mA ; Package: HERMETIC SEALED, LCC-5, 3 PIN ; Pin Count: 3 ; Number of Diodes: 2.

SICALCO42A748219 : CAP,AL2O3,47UF,16VDC,10% -TOL,50% +TOL. NFC 110 - Long life DIN 240 - Climatic category GPF CECC 30 301-019 (SICAL CO 42) CECC 30 300 (SICAL) IEC 384.4 - Long life Standard endurance test / 85°C NFC 110 - Longue durée DIN 240 - Classe d'utilisation GPF CECC 30 301-019 (SICAL CO 42) CECC 30 300 (SICAL) CEI 384.4 - Longue durée Essai d'endurance normalisé sous / 85°C s - Liaison / découplage.

SM05011-M1 : 500 V, SILICON, PIN DIODE. s: Package: MELF, HERMETIC SEALED, CERAMIC, MELF-2 ; Number of Diodes: 1.

UT4810D-S08-R : 7.5 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 30 volts ; rDS(on): 0.0135 ohms ; PD: 1380 milliwatts ; Package Type: SOP-8 ; Number of units in IC: 1.

50999R : TELECOM TRANSFORMER. s: Category: Signal ; Other Transformer Types / Applications: Telecom ; Mounting: Chip Transformer.

8681LOM1008FBN0110 : CAP,AL2O3,680UF,4VDC,20% -TOL,20% +TOL. s: Applications: General Purpose ; Electrolytic Capacitors: Aluminum Electrolytic.

 
0-C     D-L     M-R     S-Z