Details, datasheet, quote on part number: QM50DY-HB
CategoryDiscrete => Transistors => Bipolar => Modules
DescriptionTransistor Module Medium Power Switching Use Insulated Type
CompanyMitsubishi Electronics America, Inc.
DatasheetDownload QM50DY-HB datasheet
Find where to buy


Features, Applications

IC Collector current.......................... 50A VCEX Collector-emitter voltage........... 600V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271

APPLICATION Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders

Symbol VCEX (SUS) VCEX VCBO VEBO IC IC PC IB ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage

Conditions IC=1A, VEB=2V Emitter open Collector open DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings Charged part to case, AC for 1 minute Main terminal screw M5 Unit C V Nm kgcm Nm kgcm g

Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain

Limits Test conditions VEB=2V VCB=600V, Emitter open IB=67mA IC=50A (diode forward voltage) IC=50A, VCE=2.5V Min. IB1=100mA, IB2=1.0A Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) Typ. Max. Unit V s C/ W C/ W C/ W



Some Part number from the same manufacture Mitsubishi Electronics America, Inc.
QM50E2Y Medium Power Switching Use Insulated Type
QM50E2Y-2H Transistor Module Medium Power Switching Use Insulated
QM50E2Y-H Transistor Module Medium Power Switching Use Insulated Type
QM50E3Y-2H Transistor Module Medium Power Switching Use Insulated
QM50E3Y-H Transistor Module Medium Power Switching Use Insulated Type
QM50TB-2H Transistor Module, Medium Power Switching Use, Insulated Type
QM50TB-2HB Transistor Module Medium Power Switching Use Insulated Type
QM5HG-24 Transistor Module, Medium Power Use Insulated Type, Glass Passivation Type
QM600HD-M 600A - Transistor Module For Medium Power Switching Use, Non-insulated Type
QM75CY-H Transistor Module High Power Switching Use Insulated Type

M37702M6BXXXFP :

M38031F7-HP : RAM Size: 256bytes; Single-chip 8-bit CMOS Microcomputer

M38032F6-XXXFP : RAM Size: 384bytes Single Chip 8-bit CMOS Microcomputer

M38065MBDXXXGP : RAM Size: 768bytes; Single-chip 8-bit CMOS Microcomputer

M38066M1AXXXGP : RAM Size: 896bytes; Single-chip 8-bit CMOS Microcomputer

M38073MC-XXXFS : RAM Size: 512bytes; Single-chip 8-bit CMOS Microcomputer

M38226E7-FP : RAM Size: 896 Bytes; Single-chip 8-bit CMOS Microcomputer

M38867F7A-XXXGP : RAM Size: 1024bytes Single Chip 8-bit CMOS Microcomputer

M38867MAA-XXXFS : RAM Size: 1024bytes Single Chip 8-bit CMOS Microcomputer

M38868E6AFS : RAM Size: 1536bytes; Single-chip 8-bit CMOS Microcomputer

M38196EF-XXXFP : Single-chip 8-bit CMOS Microcomputer

Same catergory

403CNQ : >100 Amp. Schottky Rectifier 400 Amp. IF(AV) Rectangular waveform VRRM range IFSM 5 s sine 200Apk, TJ=125C (per leg) range The 403CNQ center tap Schottky rectifier module series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation 175 C junction temperature. Typical applications are in high current switching.

KRA721E : BRTs. = Built in Bias Resistor ;; Package = TES6.

MV409 : Silicon Tuning Diode.

OMR183NM : Hi-rel Adjustable Voltage 3-Terminal Positive Radiation Hardened Regulator.

PHE13007 : PHE13007; Silicon Diffused Power Transistor;; Package: SOT78 (TO-220AB, SC-46).

PM25RSK120 : 25 Amp Intelligent Power Module For Flat-base Type Insulated Package. : Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices. : Complete Output Power Circuit Short Circuit Over Current Over Temperature Under Voltage.

SUM110P06-07L : P-channel 60-V (D-S) 175 C MOSFET. ID (A)d D TrenchFETr Power MOSFET D New Package with Low Thermal Resistance APPLICATIONS D Automotive - 12-V Boardnet - High-Side Switches - Motor Drives Top View D Ordering Information: SUM110P06-07L SUM110P06-07L--E3 (Lead Free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Drain-Source Voltage Gate-Source Voltage Continuous.

05002-240CFZC : CAPACITOR, CERAMIC, MULTILAYER, 200 V, BP, 0.000024 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 2.40E-5 microF ; Capacitance Tolerance: 1 (+/- %) ; WVDC: 200 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology.

ASTD1020-00 : TUNNEL DIODE. s: Diode Type: Tunnel Diodes. The is a Tunnel Diodes Optimized for Operation as Back Diode Detector in Applications to 18 GHz. Excellent Temperature Stability Fast Rise / Fall Times In Die Form .

EAM18M335KS : CAPACITOR, FILM/FOIL, 3.3 uF, CHASSIS MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Capacitance Range: 3.3 microF ; Mounting Style: CHASSIS MOUNT ; Operating Temperature: -25 to 85 C (-13 to 185 F).

KA4823-CL : SMPS TRANSFORMER. s: Category: Power, Signal ; Other Transformer Types / Applications: SMPS TRANSFORMER ; Mounting: Chip Transformer ; Input Voltage: 22 to 55 volts ; Output Voltage: 220 volts ; Operating Temperature: -40 to 85 C (-40 to 185 F).

MWC350V101M22X25 : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 350 V, 100 uF, THROUGH HOLE MOUNT. s: RoHS Compliant: Yes ; : Polarized ; Capacitance Range: 100 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 350 volts ; Leakage Current: 2000 microamps ; Mounting Style: Through Hole ; Operating Temperature: -25 to 85 C (-13 to 185 F).

PC0910SKI-1R2J-S : 1 ELEMENT, 1.2 uH, GENERAL PURPOSE INDUCTOR. s: Devices in Package: 1 ; Lead Style: Radial, PRINTED WIRING PIN ; Application: General Purpose, RF Choke ; Inductance Range: 1.2 microH ; Rated DC Current: 320 milliamps ; Operating Temperature: -20 to 100 C (-4 to 212 F).

RKD703KLR : SILICON, SIGNAL DIODE. s: Package: EFP, 2 PIN. Silicon Schottky Barrier Diode for high Speed Switching Low Power consumption (Low reverse leak current) and high speed (Low capacitance). We can support the lineup of environmental friendly halogen free type on your demand. Extremely small Flat Lead Package (EFP) is suitable for compact and high-density surface mount design. Part RKD703KL R Laser Mark.

TL2B : RESISTOR, CURRENT SENSE, METAL STRIP, 0.25 W, 1 %, 75 ppm, 0.003 ohm - 0.2 ohm, SURFACE MOUNT, 1206. s: Category / Application: Current Sensing, General Use ; Technology / Construction: METAL STRIP ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 1206, CHIP ; Operating Temperature: -65 to 170 C (-85 to 338 F).

1229AS-H-100M : 1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Lead Style: WRAPAROUND ; Molded / Shielded: Shielded ; Application: General Purpose, DC-DC CONVERTER ; Inductance Range: 10 microH ; Rated DC Current: 850 milliamps.

1676871-5 : CAPACITOR, CERAMIC, MULTILAYER, 50 V, X7R, 0.00022 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 2.20E-4 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 50 volts ; Mounting Style:.

2SA1687-5 : 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: MCP, 3 PIN.

0-C     D-L     M-R     S-Z